Study of Heteroepitaxial Growth Dynamic on Compound Semiconductor substrates

化合物半导体衬底异质外延生长动力学研究

基本信息

批准号：
02452248
负责人：
OSAKA Toshiaki
金额：
$ 3.52万
依托单位：
Waseda University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1990
资助国家：
日本
起止时间：
1990 至 1991
项目状态：
已结题

项目摘要

We have used transmission electorn diffraction (TED), reflection high energy electron diffraction (RHEED) and Auger electron spectroscopy (AES) to dynamically observe the heteroepitaxial growth processes in the metals/InSb system. Firstly, prior to the dynamic al process observations, surface structures of InSb(111) InSb(001) that used as a substrate were determined on the basis of the Patterson function, Fourier analysis and least-squares refinement associated with TED : On one hand, for InSb(111)A-2x2, the measured intensities agreed well with the kinematically calculated ones of the surface structure referring to the vacancy buckling model ; for InSb(111)B-2x2, a new model where Sb trimers are adsorbed at a fourfold atop site of the outermost Sb layer has been proposed. On the other hand, regarding InSb(OO1), the Patterson analysis of observed intensities showed the clear presence of dimers on the top of the outermost layer of InSb(OOl)-c4x4. The distribution of the TED intensities … More explained well a six atom cluster model rather than a four atom cluster model. Moreover, the present TED analysis suggested that several ordered arrangements simultaneously exist on one and the same surface of InSb(OOl)-c8x2 as well as c4x4.Secondarly, we have observed growth processes of In and Au on such established InSb(111) InSb(OOI) surfaces by using ultra high vacuumin-situ TED : The results obtained are as follows :[I]In/InSb(111)(1) In grew in an island-state at room temperature and had a fcc structure at the very early stage of growth.(2) In particles experienced an ordinary epitaxial growth on InSb(111)A-2x2, whereas on InSb(111)B-2x2 they rotated to, some extent of degrees, probably being caused by the existence of Sb trimers.[II]In/InSb(001)On InSb(001), In particles grew with situation similar to In/InSb(111)A ; (i) island growth, having a pyramidal shape and (ii) fcc structure. Otherwise, different growth features are as follows : In partilces were arranged along the dimer array in both InSb(001)c4x4 and InSb(OOl)-c8x2 surfaces. In addition, their crystal habit exhibited tent-like, different from the initial growth form of a pyramid.[III]Au/InSb(111)A-2x2In this system, aROO<3>xROO<3>-Au adsorption structure has been for the first time observed at the early stage of growth. From the TED analysis, the structure was determined to be of honeycomb trimer-missing first layer (HT-MFL) type.Thirdly, we have surveyed Ag and Sn growth processes by RHEED and AES : The results are summarized as follows :[IV]Ag/InSb(111)A-2x2Ag films were found to grow with a Stranski-Krastanov mode on the InSb(111)A-2x2 surface. On the other hand, at the very early stage of growth the (110) plane of the film grew parallelly to InSb(111) with the orientation of Ag<111>//InSb<110>, whereas with the subsequent growth, the parallel orientation coexisted with Ag<110>//InSb<211>.[V]Sn/InSb(111)The stability of Sn films which grew with a layer-by-layer mode was lowered with an increase of the coverage. On InSb(111)A, the surface of the film irreversibly underwent from the 3x3 structure, via the 2x2 and subsequently the lxl, finally the melt. However, on the InSb(111)B the predominantly different growth features were observed ; the Auger signals that were indicative of a large deviation from the corresponding theoretical curves evidenced diffusion of Sb into the Sn overlayer. This diffusion behavior heavily influenced the surface phase transition of the alpha-Sn film grown on InSb(111)B-2x2. Less

我们已经使用了传输元素衍射（TED），反射高能电子衍射（RHEED）和螺旋钻电子光谱（AES），以动态观察金属/INSB系统中的异质增生生长过程。首先，在动态过程观察之前，根据帕特森函数，傅立叶分析和与TED相关的最小二乘精炼确定了INSB（111）INSB（111）INSB（111）INSB（001）的表面结构：一方面，用于INSB（111）A-2X2，与kinem facile contrucy contrucation contrancy contrancy contrancy contry contrancy contranem facive corportions a-2x2相关的液位。对于INSB（111）B-2X2，已经提出了一种新模型，其中SB三聚体被吸附在最外层SB层的四倍位置。另一方面，关于INSB（OO1），对观察到的实例的帕特森分析表明，在INSB（OOL）-C4X4的最外层顶部的二聚体清晰存在。 TED实例的分布……更多地解释了六个原子群集模型，而不是四个原子群集模型。此外，目前的TED分析表明，几个有序排列仅存在于一个和同一表面上（OOL）-C8X2以及C4X4。 In grow in an island-state at room temperature and had a fcc structure at the very early stage of growth.(2) In particles experienced an ordinary epitaxial growth on InSb(111)A-2x2, whereas on InSb(111)B-2x2 they rotated to, some extent of degrees, Probably being caused by the existence of Sb trimers.[II]In/InSb(001)On InSb(001), In particles grow with situation similar to in/insb（111）a; （i）岛的生长，具有锥体形状和（ii）FCC结构。否则，不同的生长特征如下：在INSB（001）C4X4和INSB（OOL）-C8X2表面中沿二聚体阵列中排列了部分。此外，它们的晶体习惯暴露于十个类似于金字塔的初始生长形式。[iii] au/insb（111）a-2x2在该系统，aroo <3> xRooo <3> -au添加吸附结构是在生长的早期阶段首次观察到的。从TED分析中，确定该结构为蜂窝状三聚剂一层（HT-MFL）类型。三分之一，我们已经通过Rheed和AES进行了调查的AG和SN生长过程：结果总结如下：[IV] Ag/Insb（111）A-2X2AG胶片与Stranski-Krastanov collastanov Mode（111）（111）（111）（111）（111）（111）（111）（111）（111）（111）。另一方面，在增长的早期阶段，膜的（110）平面与Insb（111）平行于Ag <111> // insb <110>的方向，而随后的增长，平行方向与Ag <110> // insb（111>。随着覆盖范围的增加。在INSB（111）a上，膜的表面是通过2x2，随后从3x3结构中从3x3结构中进行的，然后是LXL，最后是熔体。但是，在INSB（111）B上观察到了主要不同的生长特征。螺旋钻信号表明与相应的理论曲线大相径庭，证明了SB扩散到SN叠加层中。这种扩散行为严重影响了在INSB上生长的α-SN膜的表面相变（111）B-2X2。较少的