Dynamical growth processes of group IV semiconducting films on the polar surfaces of compound semiconductors as assessed by RHEED rocking curve

RHEED 摇摆曲线评估化合物半导体极性表面 IV 族半导体薄膜的动态生长过程

基本信息

批准号：
08455341
负责人：
OSAKA Toshiaki
金额：
$ 4.99万
依托单位：
Waseda University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

项目摘要

Recently, growth mode of the (111) surface of group-IV semiconductors has generated great interest. However, little work has been reported on the growth fashion on the {111} polar surfaces of III-V compound semiconductors. The purpose of this work is (i) to determine the surface normal components of atomic coordinated of InSb {111} A,B- (2*2) and (ii) to study dynamical growth processes of alpha-Sn films on these surfaces by using reflection high-energy electron diffraction (RHEED). Main results are given as follows :(i) By the quantitative analysis of RHEED rocking curves based on the dynamical diffraction theory, we have determined the surface normal atomic coordinates of the InSb {111} A,B- (2*2) surfaces which have the In-vacancy bucking structure and the Sb-trimer structure, respectively. The surface In atoms of InSb (111) A- (2*2) exhibit a large inward relaxation (-0.8). The analysis of InSb (111) B- (2*2), on the other hand, has revealed that the Sb-trimer is located at a height of -2.8 above the substrate Sb atoms, and that the prominent relaxation occurs in the subsurface region beneath the Sb-trimer.(ii) Surfaces of Sn growing on InSb {111} A,B has been studied with use of the RHEED intensity oscillation technique. The surfaces proceed in the formation of a bilayred lattice in the whole range of film thickness. However, the geometry of the outermost surface layr is quite different in both systems : The growing surface on the InSb (111) A smoothens with the same period as the lattice formation, whereas on InSb (111) B,below and above 6 ML of Sn, smooth surfaces emerge every period of monolayr and bilayr, respectively. The monolayr-period change in surface geometry is attributed to Sb segregation on the growing surface.

最近，组IV半导体（111）表面的生长模式引起了极大的兴趣。但是，关于IIII-V复合半导体的{111}极性表面的增长方式的报道很少。这项工作的目的是（i）确定INSB {111} a，b-（2*2）和（ii）原子协调的表面正常成分，用于研究这些表面上α-SN膜在这些表面上的动态生长过程，并使用反射高能量电子衍射（RHEED）。主要结果如下：（i）通过基于动力学衍射理论的Rheed摇摆曲线的定量分析，我们确定了INSB {111} a，b-（2*2）表面的表面正常原子坐标，这些表面具有分别为内置的屈曲结构和SB-Trimer结构。 INSB原子的表面（111）A-（2*2）表现出较大的内向松弛（-0.8）。另一方面，对INSB（111）b-（2*2）的分析表明，SB-Trimer位于基板SB原子上方-2.8的高度，并且突出的放松发生在SB-Triimer下方的地下区域。表面在整个膜厚度范围内形成了双层晶格。但是，在这两个系统中，最外面表面的几何形状都大不相同：INSB上的生长表面（111）具有与晶格形成相同时期的平滑表面，而在INSB（111）B上（111）B（111）B下方和以上，平滑表面平滑的表面分别出现了Monolayr和Bilayr的每个时期。表面几何形状的单层 - 周期变化归因于生长表面上的SB分离。