The initial formation of the interface in the metal/compound-semiconductor system
金属/化合物-半导体体系中界面的初始形成
基本信息
- 批准号:06452335
- 负责人:
- 金额:$ 4.74万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for General Scientific Research (B)
- 财政年份:1994
- 资助国家:日本
- 起止时间:1994 至 1995
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Understanding of the formation process and atomic structure of interfaces in the metal/semiconductor system is very important for improvements in its technology. Therefore, although such interfaces have been studied extensively for decades, little work associated with the metal/compound-semiconductor system has been carried out.In this work we report on the scanning tunneling microscopy (STM) study of the very initial stage of the interface formation in the Sn/InSb (111) A-2x2 system. So far this system has been the subject of RHEED investigation and DV-X alpha calculation. However, the question on "where is the Sn adsorbed on the InSb (111) A-2x2 surface? " has not been answered by direct methods such as STM.The clean and well-defined substrate surface of InSb (111) A-2x2 could be reproducibly prepared in UHV by annealing a sample in the narrow range near 460゚C.STM observations of the InSb (111) A-2x2 surface reveal the In-vacancy buckling structure which has been already reported by Bohr et al. For example, the STM for the occupied states manifests itself in the images corresponding to the lone-pair of Sb in the second layr near the In-vacancy at a high bias and to the bonding orbitals between the outermost layr of In and the second layr of Sb at a low bias. Occasionally, bilayr steps, the edges of which are perpendicular to eht [112] or [112] direction were observed. A novel model of these step structures is proposed on the basis of the electron counting model. The Sn is non-periodically adsorbed on the following three sites of the InSb (111) A-2x2 surface ; on-top sites of the In-vacancy, of the Sb in the second layr, and of the In in the outermost layr. Of these adsorption sites, the on-top of In-vacancy is most favorably occupied by Sn.
了解金属/半导体系统中界面的形成过程和原子结构对于改进其技术非常重要。因此,尽管已经对数十年进行了广泛的研究,但与金属/化合物 - 副导体系统相关的工作很少。在这项工作中,我们报告了SN/INSB(111)A-2X2系统中界面形成的初始阶段的扫描隧道显微镜(STM)研究。该系统已经成为Rheed投资和DV-X Alpha计算的主题。但是,关于“ SN在INSB上吸附在哪里(111)A-2X2表面的问题?”尚未通过直接方法来回答,例如stm。 Bohr等人已经报道的屈曲结构。例如,被占用状态的STM在与高偏置的近端相对的SB近对应的图像中表现出来,以及在低偏置处的最外层和第二个LAINR之间的粘合轨道。有时,观察到垂直于EHT [112]或[112]方向的边缘的bilayr步骤。这些步骤结构的新型模型是根据电子计数模型提出的。 SN在INSB(111)A-2X2表面的以下三个位点上被非隔离性吸附;插入术的顶部位点,第二个Layr中的SB和最外层的位置。在这些添加吸附位点中,烟道上的上流最有利地占据了SN。
项目成果
期刊论文数量(18)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Jun Nakamura: "Inhomogenious charge transfer in an incommensurate system" Physical Review B. 51. 5433-5436 (1995)
Jun Nakamura:“不相称系统中的非均匀电荷转移”物理评论 B. 51. 5433-5436 (1995)
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- 影响因子:0
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- 通讯作者:
Hiroo Omi: "Polarity propagation in the InSb/alpha-Sn/InSb heterostructure" Physical Review Letters. 72. 2596-2599 (1994)
Hiroo Omi:“InSb/α-Sn/InSb 异质结构中的极性传播”物理评论快报。
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- 发表时间:
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- 影响因子:0
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Jun Nakamura: "Surfactant-induced bond strengthening in as-grown film surface" Japanese Journal of Applied Physics. (in press). (1996)
Jun Nakamura:“生长薄膜表面的表面活性剂诱导的粘合强化”日本应用物理学杂志。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
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- 通讯作者:
Jun Nakamura: "Surfactant-induced bond strengthening in as-grown film surface" Japanese Journal of Applied Physics. (印刷中). (1996)
Jun Nakamura:“生长薄膜表面的表面活性剂诱导粘合”,《日本应用物理学杂志》(出版中)。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Jun Nakamura: "inhomogenious charge transfer in an incommensurate system" Physical Review B. B51. 5433-5436 (1995)
Jun Nakamura:“不相称系统中的非均匀电荷转移”物理评论 B. B51。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
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OSAKA Toshiaki的其他基金
Control of the heteroepitaxal growth on vicinal surfaces
邻近表面异质外延生长的控制
- 批准号:1155518811555188
- 财政年份:1999
- 资助金额:$ 4.74万$ 4.74万
- 项目类别:Grant-in-Aid for Scientific Research (B).Grant-in-Aid for Scientific Research (B).
Dynamical growth processes of group IV semiconducting films on the polar surfaces of compound semiconductors as assessed by RHEED rocking curve
RHEED 摇摆曲线评估化合物半导体极性表面 IV 族半导体薄膜的动态生长过程
- 批准号:0845534108455341
- 财政年份:1996
- 资助金额:$ 4.74万$ 4.74万
- 项目类别:Grant-in-Aid for Scientific Research (B)Grant-in-Aid for Scientific Research (B)
Study of Heteroepitaxial Growth Dynamic on Compound Semiconductor substrates
化合物半导体衬底异质外延生长动力学研究
- 批准号:0245224802452248
- 财政年份:1990
- 资助金额:$ 4.74万$ 4.74万
- 项目类别:Grant-in-Aid for General Scientific Research (B)Grant-in-Aid for General Scientific Research (B)
Dynamical Observations of MBE Grown Thin Films by Ultrahigh Vacuum In-situ Electron Microscopy
超高真空原位电子显微镜对 MBE 生长薄膜的动态观察
- 批准号:6355054363550543
- 财政年份:1988
- 资助金额:$ 4.74万$ 4.74万
- 项目类别:Grant-in-Aid for General Scientific Research (C)Grant-in-Aid for General Scientific Research (C)