I-Corps: Low Power Memory Chips

I-Corps：低功耗存储芯片

• 批准号: 2344683
• 负责人: Hieu Nguyen
• 金额: $ 5万
• 依托单位: Texas Tech University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-11-15 至 2024-10-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2344683&HistoricalAwards=false
• 关键词: Corps; Low; Power; Memory; Chips

The broader impact/commercial potential of this I-Corps project is the development of advanced memory devices. The memory sector is expected to take ~27% (~175 billion USD) of the total semiconductor market (~650 billion USD) by 2025 and plays a crucial role in computer systems, electronic gadgets, data centers, and cloud service systems. Currently, NAND flash technology, the dominant storage technology, has several disadvantages such as device scaling, limited endurance, low operational writing speed and requires a high write voltage and high-power consumption. The proposed technology is a resistive random-access memory (RRAM)-based non-volatile memory (NVM) technology that offers competitive solutions to the challenges of current memory technology due to its simple structure, the possibility of excellent scalability, which allows for the storage of more data, nanosecond operation speed, which allows for faster access and processing of data, and nanowatts power consumption, which increases the battery life of devices and reduces costs. The proposed RRAM may be used in a variety of Internet of Things (IoT) devices to enable faster data processing and longer battery life. In addition, the automotive industry may adopt this technology for advanced driver assistance systems and autonomous driving systems to provide high performance storage. This I-Corps project is based on the development of ultralow power (10 – 200 nW) resistive random-access memory (RRAM) devices. The proposed RRAM devices including the electrodes, carrier transport, interface properties between the contacts, and resistive switching layers of the have been systematically studied. The devices exhibit ultra-low power operation under a 10 nA operating current with excellent resistive switching characteristics, such as highly uniform I-V characteristics with concentrated SET and RESET voltages, and excellent stability. In addition, these proposed RRAM devices have multi-bit storage capability with a high Roff/Ron ratio (103). The multi-bit resistive switching behaviors of the RRAM devices at a low compliance current pave the way for low-power and high-density data storage applications.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

到2025年，高级记忆设备的开发更广泛的影响/商业广告范围。 Nand Flash技术是主要的愤怒技术，具有多种缺点，例如设备缩放，有限的Edurance，低操作写作速度，需要高的写入电压和高功率的构造。基于内存（RRAM）的非挥发性内存（NVM）Y由于其简单结构而具有出色可扩展性的可能性，允许更多数据，Nansecond Operation Speed，这允许使用，这允许适用Fasts and Processing ofda anowatts功耗，可以增加设备的电池寿命并降低成本。自主驾驶系统提供高性能存储。杆，载体传输，触点之间的界面特性以及系统研究的电阻开关层，在10 NA工作电流下，设备在具有电阻开关特性ORM I-V特性的10 Na工作电流下展示了超低操作，并具有浓缩设置和重置电压，并且出色稳定性。通过使用Toundation的知识分子优点和更广泛的影响审查标准的评估，被认为值得支持。