CAREER: Development of AlInN Nanostructures for Advanced Ultraviolet Light-Emitters

职业：开发用于先进紫外光发射器的 AlInN 纳米结构

• 批准号: 1944312
• 负责人: Hieu Nguyen
• 金额: $ 50万
• 依托单位: New Jersey Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2020
• 资助国家: 美国
• 起止时间: 2020-07-01 至 2025-06-30
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1944312&HistoricalAwards=false
• 关键词: CAREER; Development; AlInN; Nanostructures; Advanced

Nontechnical description: This project aims to develop a new form of ultraviolet light-emitters. Through a detailed theoretical and experimental study of AlInN, this project will identify solutions for the growth of AlInN nanostructured ultraviolet light-emitters. The proposed new generation nanowire light-emitters are promising candidates in solid-state lighting sources, as part of data storage, high-speed communications, information processing, optical interconnects, optical recording sterilization/water purification, medicine and biochemistry, air purification equipment and zero emission automobiles. This research program will offer unique interdisciplinary research opportunities to students at New Jersey Institute of Technology (NJIT) to gain experience in epitaxial growth techniques, hands-on device fabrication and characterization of semiconductor devices. Located in Newark, New Jersey, NJIT has a diverse student populating with a large percentage of African-American, Hispanic and women students. This research program will provide strong opportunity to our undergraduate and graduate students. In addition, experiments related to this research program will be modified and introduced to the outreach program planned for K-12 students and teachers through the Center for Pre-college Program at NJIT. This research program encourages students from underrepresented groups, in particular women, minority candidates, veterans and individuals with disabilities to participate in developing new device applications of the III-nitride nanowire semiconductors. Furthermore, research activities will be developed throughout this CAREER program and will be introduced to students in the U.S. and globally to benefit the broader community. Technical description: Significant progress has been made in the area of InGaN and AlGaN semiconductors for near ultraviolet and ultraviolet photonic devices, respectively. Nevertheless, the approach of using different III-nitride alloys for ultraviolet light-emitting diodes (LEDs) is relatively unexplored. This CAREER program will focus on fundamentals and quantitative understanding of the epitaxial growth and properties of AlxIn1-xN-based nanostructured ultraviolet LEDs operating in the wavelength range of 210 - 355nm. These nanowire ultraviolet LEDs will be grown by molecular beam epitaxy. The specific research will include: (1) design and simulation of novel nanowire LED structures and geometries; (2) fundamental investigation of the molecular beam epitaxial growth of AlInN nanowire ultraviolet LED structures; and (3) development of AlInN nanowire ultraviolet LEDs implementing unique structures. Detailed structure, optical, electrical, and reliability characterizations will be performed. This research program will enable a first demonstration of nanowire LEDs operating in the ultraviolet regime using AlInN nanostructures. The success of the proposed project will establish a foundation to develop high efficiency and high-power photonic and electronic devices that utilize the full potential of III-nitride nanostructures.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述：该项目旨在开发一种新形式的紫外发射器。通过对Alinn的详细理论和实验研究，该项目将确定Alinn纳米结构紫外线发射器生长的解决方案。拟议的新一代纳米线发射器是固态照明来源的有希望的候选人，作为数据存储，高速通信，信息处理，光学互连，光学记录无菌/水纯化，药物纯化，医学和生物化学，空气纯化设备和空气净化设备和空气纯化设备和空气纯化设备和空气净化设备和零排放汽车。该研究计划将为新泽西理工学院（NJIT）的学生提供独特的跨学科研究机会，以获取在半导体设备的外延增长技术，动手设备制造和表征上的经验。 NJIT位于新泽西州纽瓦克（Newark），有一位多元化的学生，其中有很大一部分的非裔美国人，西班牙裔和女学生。该研究计划将为我们的本科生和研究生提供强大的机会。此外，将修改与该研究计划相关的实验，并通过NJIT的大学预科课程中心为K-12学生和教师计划进行宣传计划。该研究计划鼓励来自代表性不足的群体，尤其是妇女，少数候选人，退伍军人和残疾人的学生，参与开发III硝酸盐纳米线半导体的新设备应用。此外，将在整个职业计划中开发研究活动，并将向美国和全球的学生介绍，以使更广泛的社区受益。技术描述：分别在Ingan和Algan半导体区域的紫外线和紫外线光子设备的区域取得了重大进展。然而，使用不同的III氮化合金用于紫外发光二极管（LED）的方法相对尚未探索。该职业计划将重点介绍基础知识和对基于Alxin1-XN的纳米结构的紫外线LED的外延生长和特性的定量理解。这些纳米线紫外线将通过分子束外延生长。具体研究将包括：（1）新型纳米线LED结构和几何形状的设计和模拟； （2）对Alinn纳米线紫外线LED结构的分子束外延生长的基本研究； （3）开发实施独特结构的Alinn Nanowire紫外线LED。将执行详细的结构，光学，电气和可靠性特征。该研究计划将首次展示使用Alinn纳米结构在紫外线制度中运行的纳米线LED。拟议项目的成功将建立一个基础，以开发高效率和高功率光子和电子设备，以利用III二硝酸盐纳米结构的全部潜力。该奖项反映了NSF的法定任务，并被认为是值得通过使用评估来支持的。基金会的智力优点和更广泛的影响评论标准。

项目成果

High-Efficiency Ultraviolet Emission from AlInN/GaN Nanowires Grown by Molecular Beam Epitaxy

• DOI: 10.1364/cleo_si.2020.stu3p.4
• 发表时间: 2020-05
• 期刊: 2020 Conference on Lasers and Electro-Optics (CLEO)
• 作者: R. Velpula;B. Jain;H. Bui;H. Nguyen

Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure

• DOI: 10.1364/ao.394149
• 发表时间: 2020-06-10
• 期刊: APPLIED OPTICS
• 影响因子: 1.9
• 作者: Velpula, Ravi Teja;Jain, Barsha;Nguyen, Hieu Pham Trung
• 通讯作者: Nguyen, Hieu Pham Trung

(Invited) Enhanced Efficiency of AlInN Nanowire Ultraviolet Light-Emitting Diodes Using Photonic Crystal Structures

（特邀）利用光子晶体结构提高AlInN纳米线紫外发光二极管的效率

• DOI: 10.1149/10907.0003ecst
• 发表时间: 2022
• 期刊: ECS Transactions
• 作者: Nguyen, Hieu Pham;Velpula, Ravi Teja;Patel, Moulik;Jain, Barsha;Marangon, Andressa
• 通讯作者: Marangon, Andressa

Epitaxial Growth and Characterization of AlInN-Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum

• DOI: 10.1038/s41598-020-59442-0
• 发表时间: 2020-02-13
• 期刊: SCIENTIFIC REPORTS
• 影响因子: 4.6
• 作者: Velpula, Ravi Teja;Jain, Barsha;Hieu Pham Trung Nguyen
• 通讯作者: Hieu Pham Trung Nguyen

Advantages of concave quantum barriers in AlGaN deep ultraviolet light-emitting diodes

• DOI: 10.1117/12.2650411
• 发表时间: 2023-03
• 作者: B. Jain;Mano Balo Sankar Muthu;R. Velpula;N. T. Nguyen;H. Nguyen