I-Corps: Smart Light-Emitting Diodes for Micro-Displays

I-Corps：用于微型显示器的智能发光二极管

• 批准号: 2013780
• 负责人: Hieu Nguyen
• 金额: $ 5万
• 依托单位: New Jersey Institute of Technology
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2020
• 资助国家: 美国
• 起止时间: 2020-06-15 至 2021-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2013780&HistoricalAwards=false
• 关键词: Corps; Smart; Light; Emitting; Diodes

The broader impact/commercial potential of this I-Corps project focuses on new displays and AR/VR device applications based on nanowire microLEDs (μLEDs). Financial and environmental benefits include lower electricity costs and reduced emissions from decreased consumption. LEDs in micron- or sub-micron size with high efficiency and low power consuming are desirable for applications such as micro-displays for cell phones and wearable electronics. The high efficiency, high color-rendering properties, and low power consumption μLEDs are perfectly suitable as an alternative replacement of current display technologies.This I-Corps project explores translation of μLEDs for display and AR/VR device applications. Among different approaches of generating RGB and white color μLEDs for LED displays, the monolithic display based on III-nitride nanowire heterostructure μLEDs is promising since it allows more direct control of emission wavelengths of the LEDs. Our solution, full-color and white-color nanowire μLEDs, offer several improvements over current LED technologies. The color emissions of our μLEDs can be readily varied from blue to red with highly stable light emission. Compared to conventional planar structures, our nanowire μLEDs exhibit several distinct advantages, including reduced strain-induced polarization fields and dislocation densities. The nanowire μLEDs can be more efficient in heat dissipation due to reduced current spreading resistance, and resulting in increased injection current levels. Improved efficiency and thermal management allow the integration of μLEDs onto flexible substrates, typically less thermally and electrically conductive. These nanowire μLEDs are expected to perform better than their thin-film counterparts for micro-display applications.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

该 I-Corps 项目的更广泛影响/商业潜力侧重于基于纳米线 microLED (μLED) 的新型显示器和 AR/VR 设备应用，财务和环境效益包括降低电力成本和减少微米级 LED 的排放。具有高效率和低功耗的亚微米尺寸是手机微型显示器和可穿戴电子产品等应用的理想选择，μLED 的高效率、高显色性和低功耗非常适合作为 LED 器件。当前显示技术的替代替代方案。该 I-Corps 项目探索了 μLED 在显示和 AR/VR 设备应用中的转化，在为 LED 显示器生成 RGB 和白色 μLED 的不同方法中，基于 III 族氮化物纳米线异质结构 μLED 的单片显示器。前景广阔，因为它可以更直接地控制 LED 的发射波长。我们的解决方案（全色和白色纳米线 μLED）比当前的 LED 技术提供了多项改进。我们的 μLED 的颜色发射可以很容易地改变。与传统的平面结构相比，我们的纳米线μLED具有多种独特的优势，包括减少应变引起的偏振场和位错密度，由于电流扩散电阻降低，纳米线μLED可以更有效地散热。 ，并提高注入电流水平，从而可以将 μLED 集成到通常导热性和导电性较低的柔性基板上。预计这些纳米线 μLED 的性能将优于薄膜。该奖项反映了 NSF 的法定使命，并通过使用基金会的智力价值和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

Full-Color MicroLEDs for Display Technologies

用于显示技术的全彩 MicroLED

• DOI: 10.1364/cleo_at.2020.ath3i.4
• 发表时间: 2020
• 期刊: Conference on Lasers and Electro-Optics
• 作者: Bui, Ha Quoc;Velpula, Ravi Teja;Jain, Barsha;Nguyen, Hieu Pham
• 通讯作者: Nguyen, Hieu Pham

Controlled Electron Leakage in Electron Blocking Layer Free InGaN/GaN Nanowire Light-Emitting Diodes

无电子阻挡层 InGaN/GaN 纳米线发光二极管中的受控电子泄漏

• DOI: 10.2298/fuee2103393v
• 发表时间: 2021
• 期刊: Facta Universitatis
• 作者: R. T. Velpula, B. Jain

Electron Blocking Layer Free Full-Color InGaN/GaN White Light-Emitting Diodes

无电子阻挡层全色 InGaN/GaN 白色发光二极管

• DOI: 10.1149/ma2020-02422743mtgabs
• 发表时间: 2020
• 期刊: ECS Meeting Abstracts
• 作者: Jain, Barsha;Velpula, Ravi Teja;Bui, Ha Quoc;Patel, Moulik;Nguyen, Hieu Pham
• 通讯作者: Nguyen, Hieu Pham