FuSe-TG: Physical Computing Co-Design using Three-terminal Devices

FuSe-TG：使用三端设备的物理计算协同设计

• 批准号: 2235316
• 负责人: Jennifer Hasler
• 金额: $ 30万
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-04-01 至 2024-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2235316&HistoricalAwards=false
• 关键词: FuSe; TG; Physical; Computing; Co

This effort focuses on educating and training undergraduate students in semiconductor-related research, starting from a co-located summer semester that will continue through the following fall and spring semesters. This planning grant focuses on building a research community enabling undergraduate students to co-design in this research space with the mentorship of graduate students and the principal Investigators (PIs.) The project includes the development of training aspects during the previous spring semester to teach, train, and empower students, as well as training graduate students on how to teach this community. This teaming grant will facilitate coordination between the team members and students to build a strong, cohesive core team among all the investigators. The technical activities will enable each PI to learn other's disciplines and identify compelling areas of future opportunity with semiconductor research.This effort looks to co-design from materials, to devices, to circuits, to initial systems using multiple three (or more) terminal Non-Volatile Memory (NVM) devices with significant overlap in expertise between the individuals to enable building community at the boundaries of these fields as well as effective co-design in these areas. The effort will train undergraduate students enabling a workforce capable of tackling future questions in co-design, as well as enabling graduate students to mentor this future workforce. This focuses initial research using Floating-Gate (FG) and Electro-Chemical RAM (ECRAM) devices, two potential components that integrate with standard Complementary metal-oxide-semiconductor (CMOS) and provide huge physical computing opportunities as well as reducing or eliminating component mismatch.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

这项工作着重于对与半导体相关的研究的教育和培训本科生，从共同关注的夏季学期开始，该学期将持续到下一个秋季和春季学期。这项计划赠款的重点是建立一个研究社区，使本科生能够与研究生和主要研究人员的指导（PIS。）一起在该研究领域共同设计，该项目包括上一学期期间的培训方面的发展，以教学，培训和授权学生，以及培训研究生如何教授这个社区。该团队赠款将促进团队成员和学生之间的协调，以在所有调查人员之间建立一个强大的核心团队。技术活动将使每个PI通过半导体研究学习他人的学科并确定引人注目的机会领域。这项工作旨在从材料，设备到设备，到电路，使用多个（或更多）终端非终端非挥发性（NVM）设备（NVM）设备之间的专业知识重叠，以在这些领域之间进行这些领域的专业知识，从而在这些领域之间进行这些领域，从而使这些领域有效地构建这些领域，这些努力是在这些领域中逐步建立这些领域的，这些设备是在这些领域中，这些设备是在这些领域中，这些设备可以在这些方面进行这些范围，从而使这些领域有效地在这些领域中进行了良好的范围。这项努力将培训本科生，使能够在共同设计中解决未来问题的劳动力，并使研究生能够指导这位未来的劳动力。 This focuses initial research using Floating-Gate (FG) and Electro-Chemical RAM (ECRAM) devices, two potential components that integrate with standard Complementary metal-oxide-semiconductor (CMOS) and provide huge physical computing opportunities as well as reducing or eliminating component mismatch.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader影响审查标准。