Collaborative Research: BRAM: Balanced RAnk Modulation for data storage in next generation flash memories

合作研究：BRAM：下一代闪存数据存储的平衡 RANk 调制

• 批准号: 0801658
• 负责人: Jennifer Hasler
• 金额: $ 9.45万
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-05-01 至 2012-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0801658&HistoricalAwards=false
• 关键词: Collaborative; Research; BRAM; Balanced; RAnk

Integrative, Hybrid and Complex SystemsAnxiao Jiang, Texas Engineering Experiment StationJehoshua Bruck, California Institute of TechnologyPaul E. Hasler, GA Tech Research Corporation - GA Institute of TechnologyChristopher M. Twigg, SUNY at BinghamtonCollaborative Research: BRAM: Balanced RAnk Modulation for Data Storage in Next Generation Flash MemoriesThe objective of this research is to develop a new data storage technology for next-generation flash memories with substantially improved longevity, reliability and efficiency. The approach is to use the ranks of flash-cell levels to represent data, instead of using the absolute values of the cell levels. Novel techniques are studied, including elimination of cell over-programming, reduction or even elimination of block erasures, data modification, load balancing, and error correction. The research closely combines new information-theoretical methods and hardware design.Intellectual Merit: The intellectual merit of this research includes laying the theoretical foundation for a new data-storage technology and designing a new hardware architecture for flash memories. The rank-modulation scheme eliminates the risk of charge over-injection and reduces block erasures, which are two major barriers to advances in flash memories. The theoretical analysis and the code designs have the potential to advance information theory. The study of hardware, including novel circuit components and testing techniques, has the potential to advance memory design.Broader Impacts: Electronic memories are a widely used storage media, along with magnetic and optical media. Flash memories account for 90 percent of the non-volatile electronic memory market. Techniques that enable next-generation flash memory have the potential to make significant societal and economic impacts, with the possibility of benefiting industrial production, scientific research, and the large population of flash-memory users. This research integrates research and education by developing new courses, engaging students in advanced research, including students from under-represented groups, and disseminating new knowledge.

Integrative, Hybrid and Complex SystemsAnxiao Jiang, Texas Engineering Experiment StationJehoshua Bruck, California Institute of TechnologyPaul E. Hasler, GA Tech Research Corporation - GA Institute of TechnologyChristopher M. Twigg, SUNY at BinghamtonCollaborative Research: BRAM: Balanced RAnk Modulation for Data Storage in Next Generation Flash MemoriesThe objective of this research is to develop a new data storage technology for下一代闪光记忆，其寿命，可靠性和效率大大提高。 该方法是使用闪存电池级别的等级来表示数据，而不是使用单元格级别的绝对值。 研究了新型技术，包括消除细胞过度编程，还原甚至消除块擦除，数据修改，负载平衡和误差校正。 该研究紧密地结合了新的信息理论方法和硬件设计。智能优点：本研究的智力优点包括为新的数据存储技术奠定理论基础，并为闪光记忆设计新的硬件体系结构。 排名调制方案消除了收费过度注入的风险，并减少了阻塞擦除，这是闪光记忆进展的两个主要障碍。 理论分析和代码设计具有推进信息理论的潜力。 硬件的研究，包括新型电路组件和测试技术，具有推进内存设计的潜力。Boader的影响：电子记忆是一种广泛使用的存储介质，以及磁性和光学介质。 Flash Memories占非挥发性电子记忆市场的90％。 实现下一代闪存的技术有可能产生重大的社会和经济影响，并有可能使工业生产，科学研究以及大量闪存的闪存使用者受益。 这项研究通过开发新课程，使学生参与高级研究，包括来自代表性不足的群体的学生以及传播新知识，从而整合研究和教育。