FuSe-TG: Co-Design of Germanium Oxide-based Semiconductors from Deposition to Devices

FuSe-TG：氧化锗基半导体从沉积到器件的协同设计

• 批准号: 2235208
• 负责人: Steven May
• 金额: $ 46万
• 依托单位: Drexel University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2023
• 资助国家: 美国
• 起止时间: 2023-04-01 至 2025-03-31
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2235208&HistoricalAwards=false
• 关键词: FuSe; TG; Co; Design; Germanium

Non-Technical Summary:This Future of Semiconductors (FuSe) project focuses on developing research capabilities and collaborations centered around germanium oxide-based semiconductors that are of interest for applications such as power electronics and infrared detection. The grant enables the formation of a team, which consists of 12 investigators from five different universities representing five disciplines within physical science and engineering, to address fundamental scientific and engineering challenges associated with material design, manufacturing, property control and device integration, activities required to move germanium oxide semiconductors from academic laboratories into society-benefiting technologies including electric vehicles to autonomous systems. In parallel, the team coordinates activities to make progress on the development of new materials and devices through co-design principles. Concurrent with these activities, the project pilots workforce development initiatives to help bolster the United States technical workforce in the semiconductor sector. These include providing students from traditionally under-represented groups with summer research experiences focused on oxide semiconductors and creating educational and training opportunities for students at technical-focused colleges in geographic proximity to the teaming institutions. Additionally, the team builds inter-institutional and industrial partnerships to ensure the research and workforce development activities are aligned with national technological needs.Technical Summary:The project applies a convergent and team-based approach to plan the realization of wide and narrow band gap germanium oxide-based semiconductors that can be doped, form alloys for band gap engineering, are not comprised of toxic elements, and can be processed into high performing devices. The team is building research collaborations aimed at advancing fundamental knowledge in areas related to thin film deposition, crystal growth, thermodynamic and electronic structure modeling, defect characterization, and device testing. The team works to understand and implement the materials synthesis conditions required to stabilize targeted germanium oxides in heterostructure form, while enabling both doping and alloying for property engineering. Computational and experimental activities provide strategies for understanding and controlling defects, either those desired (dopants) or undesired (dislocations, point defects), within these semiconductors. The team develops an understanding of the ultimate limits to the fabrication and performance of junctions, contacts, and devices for high power electronics and sensing based on germanium oxide semiconductors. Co-design is infused throughout the scientific objectives such that issues related to manufacturing scalability, substrate development, and environmental impacts are evaluated and researched alongside heterostructure design and device demonstrations. The project pilots a two-pronged strategy for enabling new educational opportunities related to semiconductors. The first of these leverages the existing NSF-PREM programs to create a summer research opportunity for a student from an under-represented group in one of the participating labs each year; the second establishes educational opportunities for students at community or technical colleges.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术摘要：半导体项目（FUSE）项目的未来重点是开发围绕基于氧化锗的半导体的研究能力和协作，这些半导体对电力电子和红外检测等应用感兴趣。该赠款使团队的组建由来自物理科学和工程中的五个不同大学的12名调查人员组成，以应对与材料设计，制造，物业控制和设备整合相关的基本科学和工程挑战，这是将氧化武器武器分离的活动将学术实验室转移到包括电动系统中的社会企业范围内的，包括电动系统，包括电动系统，包括电动系统。同时，团队协调活动，以通过共同设计原则在开发新材料和设备方面取得进展。与这些活动同时，项目飞行员劳动力开发计划旨在帮助加强半导体领域的美国技术劳动力。其中包括为传统代表性不足的团体提供的学生提供夏季研究经验，专注于氧化物半导体，并为以技术注重的大学的地理位置为靠近团队机构创造教育和培训机会。 Additionally, the team builds inter-institutional and industrial partnerships to ensure the research and workforce development activities are aligned with national technological needs.Technical Summary:The project applies a convergent and team-based approach to plan the realization of wide and narrow band gap germanium oxide-based semiconductors that can be doped, form alloys for band gap engineering, are not comprised of toxic elements, and can be processed into high performing设备。该团队正在建立研究合作，旨在促进与薄膜沉积，晶体生长，热力学和电子结构建模，缺陷表征和设备测试有关的领域的基本知识。该团队致力于理解和实施以异质结构形式稳定目标葡萄干所需的材料综合条件，同时既可以为房地产工程掺杂和合金。计算和实验活动提供了在这些半导体中理解和控制缺陷的策略，即所需的（掺杂剂）或不希望的（位错，点缺陷）。该团队对基于氧化锗半导体的高功率电子设备的制造和性能的最终限制有了了解的最终限制。共同设计在整个科学目标中都注入了，因此与异质结构设计和设备演示一起评估和研究了与制造可伸缩性，底物开发和环境影响有关的问题。该项目飞行员采取了两国策略，以实现与半导体有关的新教育机会。其中的第一个利用了现有的NSF-Prem计划为每年参与实验室之一的人数不足的小组的学生创造夏季研究机会；第二个为社区或技术学院的学生建立了教育机会。该奖项反映了NSF的法定任务，并被认为是值得通过基金会的知识分子优点和更广泛影响的审查标准来评估值得支持的。