Application of dielectric resonators to millimeter-wave on-chip filters and interconnects

介质谐振器在毫米波片上滤波器和互连中的应用

基本信息

批准号：
253223135
负责人：
Professor Dr. Jan Hesselbarth
金额：
--
依托单位：
Institut für Hochfrequenztechnik (IHF)
依托单位国家：
德国
项目类别：
Research Grants
财政年份：
2013
资助国家：
德国
起止时间：
2012-12-31 至 2018-12-31
项目状态：
已结题

来源：
https://gepris.dfg.de/gepris/projekt/253223135?language=en
关键词：
Application dielectric resonators millimeter wave

项目摘要

A growing number of applications in communications and sensing use frequencies in the millimeter-wave bands of the spectrum. This trend drives the need for and the development of innovative concepts for passive components such as new interconnects to monolithic integrated circuits and low-loss on-chip bandpass filters. Millimeter-wave integrated circuits are typically mounted on circuit board by flip-chip or wirebond technique. Many solutions then exist to connect all sorts of waveguiding structures to circuit boards. Solutions with less complexity were proposed with direct connections from chip to rectangular waveguide or to dielectric waveguide by means of suitably modified on-chip antennas. In the legacy project of the applicant, coupling from on-chip microstrip line to rectangular waveguide by means of a spherical dielectric resonator was realized. It was shown experimentally that this concept, with a measured transmission loss of 2.6 dB at 64 GHz, outperforms other solutions in terms of loss, while it also provides also provides advantages in chip area consumption, assembly complexity, and testability. Planar passive mm-wave bandpass filters, when integrated on-chip, are typically embedded in the top chip layers but still suffer from significant insertion loss and low selectivity. Alternatively, low-loss (high Q-factor) resonators are particularly important for oscillators, and on-chip dielectric resonator oscillators were proposed for frequencies up to 60 GHz. These oscillators use cylindrical dielectric resonators where accurate placement can be critical and chip-area consumption will be an issue. In the legacy project of the applicant, some investigations were done on low-loss (high-Q) on-chip spherical dielectric resonators. Radiation of these resonators in a specific higher-order resonance mode can indeed be very small and thus unloaded Q of these resonators can be very high, opening the possibility to realize highly selective on-chip resonators and filters. Measurements of on-chip spherical dielectric resonators made of alumina ceramic showed unloaded Q as large as 1400 at 64 GHz and 2200 at 103 GHz. The proposed continuation project aims to extend the basic idea of using on-chip spherical dielectric resonators for the realization of on-chip multi-resonator bandpass filters operating around 100 GHz. In consequence of some manufacturing issues with the previously designed test wafers, this project continuation will also give the opportunity to refine the manufacturing technology and to repeat and improve some of the previously designed coupling structures on a new test wafer.

频谱的毫米波频段中的通信和传感使用频率越来越多。这种趋势推动了被动组件的创新概念的需求和开发，例如与整体综合电路的新互连和低损失的芯片片带过滤器。毫米波集成电路通常通过Flip-Chip或WireBond技术安装在电路板上。因此，存在许多解决方案，以将各种波浪结构连接到电路板。提出了从芯片到矩形波导的直接连接或通过适当修改的芯片天线的介电波导的直接连接的溶液。在申请人的传统项目中，通过球形介电谐振器从片上微带线到矩形波导耦合。从实验上表明，该概念在64 GHz时测量的传输损失为2.6 dB，在损失方面优于其他解决方案，而它还提供了芯片区域消耗，组装复杂性和可检验性的优势。平面被动MM-WAVE带通滤波器（集成在片上）通常会嵌入顶部芯片层中，但仍会患有明显的插入损失和低选择性。或者，低损坏（高Q因子）谐振器对振荡器尤为重要，并提出了芯片介电谐振器振荡器的频率高达60 GHz。这些振荡器使用圆柱电介质谐振器，在这些介电谐振器中准确放置可能是关键的，并且芯片区域消耗将是一个问题。在申请人的传统项目中，对低损坏（高Q）片上球体介电谐振器进行了一些研究。这些谐振器在特定的高阶谐振模式下的辐射确实可能很小，因此这些谐振器的卸载Q可能很高，可以为实现高度选择性的芯片谐振器和过滤器提供可能性。用氧化铝陶瓷制成的片上球形介电谐振器的测量表明，在64 GHz时的卸载Q大约1400，而103 GHz的2200。拟议的延续项目旨在扩展使用片上球形介电谐振器的基本概念，以实现芯片多谐振器带通滤波器在100 GHz左右运行左右。由于先前设计的测试晶片的某些制造问题，该项目的延续还将有机会完善制造技术，并在新的测试晶圆上重复和改善一些先前设计的耦合结构。