Planning Grant: Engineering Research Center for Micro Ferroelectronics for Devices and Systems: microFeDS

规划资助:微铁电子器件与系统工程研究中心:microFeDS

基本信息

  • 批准号:
    2123863
  • 负责人:
  • 金额:
    $ 10万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Standard Grant
  • 财政年份:
    2021
  • 资助国家:
    美国
  • 起止时间:
    2021-08-15 至 2024-05-31
  • 项目状态:
    已结题

项目摘要

AbstractNontechnical Description The project aims to address the rising energy consumption of computing that is posing an existential crisis with super exponential growth of data, computing and communications. The genesis of the current digital revolution started with silicon-based digital technology and has ushered in unprecedented progress over the past five decades. However, as information systems transform to a data-centric paradigm, it motivates a comprehensive rethinking of the fundamental nature of computing platforms- from materials-to-systems. For instance, unlike traditional computers that separate memory storage and computing processes, realizing new computing platforms such as cognitive systems, explainable artificial intelligence, communication systems, etc., would benefit from converging them together, resulting in orders-of-magnitude improvement in energy efficiency and performance. The recent progress in developing highly scalable, and process technology compatible ferroelectric materials provides a promising pathway to developing this infrastructure for the next generation of information processing platforms. The objective of this planning grant is to consolidate this vision to enable setting up an Engineering Research Center that can facilitate across-the-stack innovations to facilitate such systems. Researchers from the Rochester Institute of Technology, the State University of New York, the University of Pennsylvania, and the University of Virginia, with complementary expertise- ranging from devices to systems and computing algorithms, will integrate these strengths to lay the foundation for a center to realize the next generation of computing hardware infrastructure. The center also aims to create mid-scale research infrastructure for training the future generation of scientists & engineers to expand the semiconductor workforce for imminent societal needs in energy efficient computing, security and healthcare.Technical DescriptionA unified logic and memory technology platform provides a promising pathway to overcome the challenges of conventional computing platforms arising from the Moore’s law scaling slowing down, and the memory bottleneck of the von Neumann architecture. The ultra-low energy, non-volatile polarization switching in new highly scaled ferroelectrics is a promising route the realize the power, performance, area, and cost benefits of such a unified technology platform. We propose to conceptualize a Center for Micro Ferroelectronic Devices and Systems (microFeDS) that will create the infrastructure dedicated to performing a comprehensive research effort that will span from designing, growth and integration of ferroelectric materials, fabrication of ferroelectronic devices, circuits and systems. Besides application of such platforms in computing, we will also explore the synergies of various aspects of this technology in other areas such as microwaves, ferro photonics, microfluidics, sensors, and energy harvesting. Planning activities will entail cultivating collaborations with government, academics, national labs, industry technologists, international institutes, and educators to enable the integration of ferroelectronic devices with new functionalities on to the existing electronic platform. The major grant activities include: 1) establish mission and grand vision of the Center; 2) identify external partners and invite them to collaborate in the planning of the Center; 3) define goals, objectives and metrics for the Center; 4) conduct joint meeting to unveil the mission, where involved parties will present their technical work in the context of technological contributions and broader impacts; 5) writing a compelling proposal; and 6) proposal review and submission.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
摘要非技术描述该项目旨在解决计算能源消耗的不断增长,这构成了现有的危机,并具有数据,计算和通信的超级指数增长。当前数字革命的起源始于基于硅的数字技术,在过去的五十年中一直在前所未有的进步中使用。但是,随着信息系统转换为以数据为中心的范式,它激发了从材料到系统的计算平台的基本性质的全面重新思考。例如,与传统的计算机不同,将内存存储和计算过程分开,实现了新的计算平台,例如认知系统,可解释的人工智能,通信系统等,将受益于将它们融合在一起,从而提高了能源效率和性能的阶级。在开发高度可扩展和过程技术兼容的铁电材料方面的最新进展为开发下一代信息处理平台开发此基础架构提供了有希望的途径。这项计划赠款的目的是合并这一愿景,以便建立一个工程研究中心,该研究中心可以促进跨堆栈创新以促进此类系统。罗切斯特理工学院,纽约州立大学,宾夕法尼亚大学和弗吉尼亚大学的研究人员具有从设备到系统和计算算法的互补专业知识,将融合这些优势,以奠定基础,以实现一个中心的基础,以实现下一代计算硬件基础结构的中心。该中心还旨在创建中期研究基础设施,以培训未来的科学家和工程师,以扩大能源有效的计算,安全性和医疗保健的社会需求的半导体劳动力。 建筑学。新型高度缩放的铁电器中的超低能量,非挥发性极化切换是一条有前途的路线,意识到了这种统一技术平台的力量,性能,区域和成本优势。我们建议将微铁电器设备和系统(微杆)的中心概念化,该中心将创建致力于执行全面研究工作的基础架构,该研究将涵盖铁电材料的设计,增长和整合,制造铁电器设备,电路和系统。除了在计算中应用此类平台外,我们还将探索该技术各个方面的协同作用,例如微波,铁光子学,微流体,微流体,传感器和能量收集。规划活动将需要与政府,学者,国家实验室,行业技术,国际机构和教育工作者进行培养,以使铁电子设备与新功能与现有电子平台的新功能相结合。主要赠款活动包括:1)建立中心的使命和宏伟的愿景; 2)确定外部合作伙伴并邀请他们在中心计划中进行合作; 3)定义中心的目标,目标和指标; 4)举行联合会议以揭露任务,其中相关方将在技术贡献和更广泛影响的背景下展示其技术工作; 5)撰写引人注目的建议;和6)提案审查和提交。该奖项反映了NSF的法定任务,并通过评估使用基金会的知识分子优点和更广泛的影响标准,被认为是珍贵的支持。

项目成果

期刊论文数量(2)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Analog content-addressable memory from complementary FeFETs
来自互补 FeFET 的模拟内容寻址存储器
  • DOI:
    10.1016/j.device.2023.100218
  • 发表时间:
    2024
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Liu, Xiwen;Katti, Keshava;He, Yunfei;Jacob, Paul;Richter, Claudia;Schroeder, Uwe;Kurinec, Santosh;Chaudhari, Pratik;Jariwala, Deep
  • 通讯作者:
    Jariwala, Deep
A Comparative Study of n- and p-Channel FeFETs with Ferroelectric HZO Gate Dielectric
  • DOI:
    10.3390/solids4040023
  • 发表时间:
    2023-12-01
  • 期刊:
  • 影响因子:
    0
  • 作者:
    Jacob,Paul;Patil,Pooja C.;Kurinec,Santosh
  • 通讯作者:
    Kurinec,Santosh
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Santosh Kurinec其他文献

Analyzing residual stress in bilayer chalcogenide Ge<sub>2</sub>Se<sub>3</sub>/SnTe films
  • DOI:
    10.1016/j.tsf.2009.04.017
  • 发表时间:
    2009-10-30
  • 期刊:
  • 影响因子:
  • 作者:
    Archana Devasia;Feiming Bai;Morgan Davis;Kristy A. Campbell;Surendra Gupta;Santosh Kurinec
  • 通讯作者:
    Santosh Kurinec
Introducing gallium in silicon and thin film polysilicon using self assembled monolayer doping
利用自组装单层掺杂将镓引入硅和薄膜多晶硅中
  • DOI:
    10.1016/j.matlet.2022.132839
  • 发表时间:
    2022
  • 期刊:
  • 影响因子:
    3
  • 作者:
    Carolyn Spaulding;Alex Taylor;Scott Williams;Glenn Packard;Gabriel Curvacho;Santosh Kurinec
  • 通讯作者:
    Santosh Kurinec

Santosh Kurinec的其他文献

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{{ truncateString('Santosh Kurinec', 18)}}的其他基金

EAGER: Self Assembled Monolayer Doping for Advanced 3D Nano & Flexible Semiconductor Structures
EAGER:用于先进 3D 纳米的自组装单层掺杂
  • 批准号:
    1842635
  • 财政年份:
    2018
  • 资助金额:
    $ 10万
  • 项目类别:
    Standard Grant
SKAUST-NSF Research Conference on Electronic Materials, Devices and Systems for a Sustainable Future March 2016 Thuwal, Saudi Arabia
SKAUST-NSF 可持续未来电子材料、设备和系统研究会议 2016 年 3 月 沙特阿拉伯图瓦尔
  • 批准号:
    1560843
  • 财政年份:
    2016
  • 资助金额:
    $ 10万
  • 项目类别:
    Standard Grant
EAGER: Ferroelectric Memristive Devices Emulating Synapses in Subcortical Information Processors
EAGER:铁电忆阻器件模拟皮层下信息处理器中的突触
  • 批准号:
    1445386
  • 财政年份:
    2014
  • 资助金额:
    $ 10万
  • 项目类别:
    Standard Grant
Semiconductor Technology 2020. The Workshop will be held in Rochester NY on May 14-16, 2007.
2020 年半导体技术。研讨会将于 2007 年 5 月 14 日至 16 日在纽约罗切斯特举行。
  • 批准号:
    0733611
  • 财政年份:
    2007
  • 资助金额:
    $ 10万
  • 项目类别:
    Standard Grant
Leading Microelectronic Engineering Education to New Horizons
引领微电子工程教育新视野
  • 批准号:
    0530575
  • 财政年份:
    2005
  • 资助金额:
    $ 10万
  • 项目类别:
    Standard Grant
Integration of Magnetic Tunnel Junctions with Quantum Negative Differential Resistance Devices
磁隧道结与量子负微分电阻器件的集成
  • 批准号:
    0501460
  • 财政年份:
    2005
  • 资助金额:
    $ 10万
  • 项目类别:
    Continuing Grant
Undergraduate Co-op Based Concentration Curriculum in MEMs and Nanotechnology
基于合作社的本科 MEM 和纳米技术专业课程
  • 批准号:
    0342703
  • 财政年份:
    2003
  • 资助金额:
    $ 10万
  • 项目类别:
    Standard Grant
GOALI: High Permeability Ferrite Cores for Micro-Inductors
GOALI:用于微电感器的高磁导率铁氧体磁芯
  • 批准号:
    0219379
  • 财政年份:
    2002
  • 资助金额:
    $ 10万
  • 项目类别:
    Standard Grant

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  • 批准年份:
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