Leading Microelectronic Engineering Education to New Horizons
引领微电子工程教育新视野
基本信息
- 批准号:0530575
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2005
- 资助国家:美国
- 起止时间:2005-09-01 至 2010-08-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This department level reform project in a department of Microelectronic Engineering proposes to institute major reform to: (1) offer a semiconductor processing minor for non-microelectronic science and engineering programs promoting access to state-of-the art semiconductor fabrication facilities to students from other programs; (2) develop a concentration program in nanotechnology and MEMS; (3) craft a five course elective sequence within the existing microelectronic curriculum by eliminating legacy material and course consolidation (4) build outreach programs for targeting larger and diverse participation, particularly from women and underrepresented minority students, in preparing the workforce for the nation's future high tech industry; and (5) enhance student learning through co-op employment and multidisciplinary projects that include service learning component.Intellectual Merit. The incredible shrinking transistor has revolutionized the science and technology of miniaturization and enabled applications not only in electronics but also in mechanics, photonics, biology, magnetics and chemistry. This project will provide students with the foundation and vision needed to apply their knowledge to new frontiers. The hands-on nature of the RIT program, with its strong laboratory component and integrated industrial cooperative experience, stands out among U.S. universities. RIT's department of Microelectronic Engineering has a proven track record and has sustained a unique program over nearly a quarter-century, all the while keeping current with the latest technological advancements. The proposing team consists of multidisciplinary academic faculty with strong prior experience in curriculum development and integrating research with education. The coop program coordinators with this program have over twenty years of progressive experience in industrial co-op placement, career counseling and advisement, training delivery, and personnel recruitment.Broader Impact. Conventional microelectronics is extending into new frontiers that include MEMS, nanotechnology and flexible electronics. The development of the necessary workforce for the future will require students to access various courses outside their discipline. The proposed implementation grant will result in non-microelectronic students taking five courses outside their discipline, thereby expanding their career opportunities and providing industry with engineers having current and relevant skills. The implementation will also produce well-qualified students for graduate research in new frontiers that will be critical to maintaining our nation's innovation edge. The courses in the proposed semiconductor processing minor have a significant laboratory component that will allow greater student access to labs in the state-of-the-art fabrication facility that the department has developed over the last 23 years. The initiatives proposed in this proposal will target larger participation of women and minorities.
该部门级别的改革项目在微电子工程系中提议进行重大改革:(1)为非微电子科学和工程计划提供半导体处理未成年人,以促进其他计划的学生促进前进的半导体制造设施; (2)在纳米技术和MEMS中制定集中计划; (3)通过消除遗产材料和课程合并(4)建立推出计划,以针对更大和多样化的参与,尤其是妇女和代表性不足的少数学生,在为全国的未来高科技行业做好准备,以构建五个课程的选修顺序(4)建立宣传计划,尤其是妇女和代表性不足的少数民族学生; (5)通过合作社的就业和多学科项目来增强学生的学习,包括服务学习组成部分。令人难以置信的收缩晶体管彻底改变了微型化的科学和技术,不仅在电子产品中,而且在力学,光子学,生物学,磁学和化学方面都启用了应用。该项目将为学生提供将知识应用于新边界所需的基础和愿景。 RIT计划的动手性质具有强大的实验室组成部分和综合的工业合作经验,在美国大学中脱颖而出。 RIT的Microelectronic Engineering部门具有良好的往绩,并在近25年内一直保持着独特的计划,同时一直保持最新的技术进步。提议的团队由多学科学术教师组成,在课程开发方面具有丰富的先前经验,并将研究与教育融合在一起。该计划的Coop计划协调员在工业合作安置,职业咨询和咨询,培训交付和人员招聘方面具有超过20年的进步经验。传统的微电子学已延伸到包括MEMS,纳米技术和柔性电子产品在内的新边界。未来必要的劳动力的发展将要求学生在学科之外访问各种课程。拟议的实施赠款将导致非微电子学生在他们的纪律之外学习五门课程,从而扩大其职业机会,并为工程师提供具有当前和相关技能的工程师。该实施还将在新的边境中培养合格的学生进行研究生研究,这对于维持我们国家的创新优势至关重要。拟议的半导体加工未成年人的课程具有重要的实验室组件,该课程将使该部门在过去23年中开发的最先进制造设施中的实验室获得更多的访问。该提议中提出的计划将针对妇女和少数民族的更大参与。
项目成果
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Santosh Kurinec其他文献
Analyzing residual stress in bilayer chalcogenide Ge<sub>2</sub>Se<sub>3</sub>/SnTe films
- DOI:
10.1016/j.tsf.2009.04.017 - 发表时间:
2009-10-30 - 期刊:
- 影响因子:
- 作者:
Archana Devasia;Feiming Bai;Morgan Davis;Kristy A. Campbell;Surendra Gupta;Santosh Kurinec - 通讯作者:
Santosh Kurinec
Introducing gallium in silicon and thin film polysilicon using self assembled monolayer doping
利用自组装单层掺杂将镓引入硅和薄膜多晶硅中
- DOI:
10.1016/j.matlet.2022.132839 - 发表时间:
2022 - 期刊:
- 影响因子:3
- 作者:
Carolyn Spaulding;Alex Taylor;Scott Williams;Glenn Packard;Gabriel Curvacho;Santosh Kurinec - 通讯作者:
Santosh Kurinec
Santosh Kurinec的其他文献
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{{ truncateString('Santosh Kurinec', 18)}}的其他基金
Planning Grant: Engineering Research Center for Micro Ferroelectronics for Devices and Systems: microFeDS
规划资助:微铁电子器件与系统工程研究中心:microFeDS
- 批准号:
2123863 - 财政年份:2021
- 资助金额:
-- - 项目类别:
Standard Grant
EAGER: Self Assembled Monolayer Doping for Advanced 3D Nano & Flexible Semiconductor Structures
EAGER:用于先进 3D 纳米的自组装单层掺杂
- 批准号:
1842635 - 财政年份:2018
- 资助金额:
-- - 项目类别:
Standard Grant
SKAUST-NSF Research Conference on Electronic Materials, Devices and Systems for a Sustainable Future March 2016 Thuwal, Saudi Arabia
SKAUST-NSF 可持续未来电子材料、设备和系统研究会议 2016 年 3 月 沙特阿拉伯图瓦尔
- 批准号:
1560843 - 财政年份:2016
- 资助金额:
-- - 项目类别:
Standard Grant
EAGER: Ferroelectric Memristive Devices Emulating Synapses in Subcortical Information Processors
EAGER:铁电忆阻器件模拟皮层下信息处理器中的突触
- 批准号:
1445386 - 财政年份:2014
- 资助金额:
-- - 项目类别:
Standard Grant
Semiconductor Technology 2020. The Workshop will be held in Rochester NY on May 14-16, 2007.
2020 年半导体技术。研讨会将于 2007 年 5 月 14 日至 16 日在纽约罗切斯特举行。
- 批准号:
0733611 - 财政年份:2007
- 资助金额:
-- - 项目类别:
Standard Grant
Integration of Magnetic Tunnel Junctions with Quantum Negative Differential Resistance Devices
磁隧道结与量子负微分电阻器件的集成
- 批准号:
0501460 - 财政年份:2005
- 资助金额:
-- - 项目类别:
Continuing Grant
Undergraduate Co-op Based Concentration Curriculum in MEMs and Nanotechnology
基于合作社的本科 MEM 和纳米技术专业课程
- 批准号:
0342703 - 财政年份:2003
- 资助金额:
-- - 项目类别:
Standard Grant
GOALI: High Permeability Ferrite Cores for Micro-Inductors
GOALI:用于微电感器的高磁导率铁氧体磁芯
- 批准号:
0219379 - 财政年份:2002
- 资助金额:
-- - 项目类别:
Standard Grant
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Postgraduate Scholarships - Master's