Undergraduate Co-op Based Concentration Curriculum in MEMs and Nanotechnology
基于合作社的本科 MEM 和纳米技术专业课程
基本信息
- 批准号:0342703
- 负责人:
- 金额:$ 9.91万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Standard Grant
- 财政年份:2003
- 资助国家:美国
- 起止时间:2003-09-01 至 2005-08-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
ABSTRACTThe Microelectronic Engineering Department of Rochester Institute of Technology (RIT) proposes to undertake a one-year planning project to define and develop new undergraduate MEMs and nanotechnology concentration programs. The programs will be available to students as an option (concentration) or as a minor within the existing baccalaureate programs. A multidisciplinary planning team will be constituted that will collect information and conduct surveys, using industry leaders, employers and research institutions for important guidance. With the existing BS program in Microelectronic Engineering as a foundation, the team will seek to assemble a multidisciplinary curriculum that best fits the educational needs of students and the requirements of U.S. employers in the emerging field of MEMs and nanotechnology. This is an opportunity for a department level reform in the curriculum to equip the students with a knowledge and experience in MEMs and nanotechnology and to expand opportunities for its graduates beyond traditional microelectronics and in technologies requiring integration with microelectronics such as data storage and Microsystems technologies. It is proposed to develop: (1) 'minor' programs in MEMs and nanotechnology consisting of at least four courses for undergraduate students of Microelectronic Engineering; (2) a nanofabrication course for students of other science and engineering disciplines; (3) creation of nanotechnology/MEMs based multidisciplinary design experience for undergraduates; (4) building of cooperative experience in MEMs and nanotechnology; (5) using co-op evaluations as a means for outcome evaluation and technological advancement of the program; (6) develop outreach activities for minority student recruitment and K-12 education. The curriculum will emphasize hands-on student access to equipment for laboratory experiments; cross-discipline mentored undergraduate research projects, and will use a combination of existing and newly developed courses from several institute departments or colleges. Built into the program will be means for evaluating outcomes so that the curriculum, once established, can be updated or adjusted according to the needs of the rapidly emerging field of MEMs and nanotechnology.
摘要罗切斯特理工学院(RIT)的微型工程系提议进行为期一年的计划项目,以定义和开发新的本科MEMS和纳米技术集中计划。 这些课程将作为选项(集中)或现有学士学位课程中的未成年人提供。将组成一个多学科的计划团队,该团队将使用行业领导者,雇主和研究机构进行重要指导,收集信息并进行调查。 以微电子工程的现有BS计划作为基础,该团队将寻求组装一项多学科课程,该课程最适合学生的教育需求以及美国雇主在MEMS和纳米技术的新兴领域的要求。 这是课程中部门级别改革的机会,可以使学生在MEMS和纳米技术方面具有知识和经验,并为其毕业生提供机会以外的传统微电子学和需要与微电子学(如数据存储和微型系统技术)进行整合的技术。 提议开发:(1)MEMS和纳米技术中的“次要”计划,包括至少四门小学工程本科生的课程; (2)针对其他科学和工程学科的学生的纳米制作课程; (3)创建基于纳米技术/MEMS的多学科设计经验; (4)在MEMS和纳米技术中建立合作经验; (5)使用合作评估作为结果评估和技术进步的手段; (6)为少数族裔学生招聘和K-12教育开发外展活动。 该课程将强调动手的学生进入实验室实验的设备;跨学科指导的本科研究项目,将结合来自几个学院或学院的现有和新开发的课程。 该计划中的内置将是评估结果的手段,以便一旦建立,就可以根据MEMS和纳米技术的快速新兴领域的需求进行更新或调整课程。
项目成果
期刊论文数量(0)
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科研奖励数量(0)
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专利数量(0)
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Santosh Kurinec其他文献
Analyzing residual stress in bilayer chalcogenide Ge<sub>2</sub>Se<sub>3</sub>/SnTe films
- DOI:
10.1016/j.tsf.2009.04.017 - 发表时间:
2009-10-30 - 期刊:
- 影响因子:
- 作者:
Archana Devasia;Feiming Bai;Morgan Davis;Kristy A. Campbell;Surendra Gupta;Santosh Kurinec - 通讯作者:
Santosh Kurinec
Introducing gallium in silicon and thin film polysilicon using self assembled monolayer doping
利用自组装单层掺杂将镓引入硅和薄膜多晶硅中
- DOI:
10.1016/j.matlet.2022.132839 - 发表时间:
2022 - 期刊:
- 影响因子:3
- 作者:
Carolyn Spaulding;Alex Taylor;Scott Williams;Glenn Packard;Gabriel Curvacho;Santosh Kurinec - 通讯作者:
Santosh Kurinec
Santosh Kurinec的其他文献
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{{ truncateString('Santosh Kurinec', 18)}}的其他基金
Planning Grant: Engineering Research Center for Micro Ferroelectronics for Devices and Systems: microFeDS
规划资助:微铁电子器件与系统工程研究中心:microFeDS
- 批准号:
2123863 - 财政年份:2021
- 资助金额:
$ 9.91万 - 项目类别:
Standard Grant
EAGER: Self Assembled Monolayer Doping for Advanced 3D Nano & Flexible Semiconductor Structures
EAGER:用于先进 3D 纳米的自组装单层掺杂
- 批准号:
1842635 - 财政年份:2018
- 资助金额:
$ 9.91万 - 项目类别:
Standard Grant
SKAUST-NSF Research Conference on Electronic Materials, Devices and Systems for a Sustainable Future March 2016 Thuwal, Saudi Arabia
SKAUST-NSF 可持续未来电子材料、设备和系统研究会议 2016 年 3 月 沙特阿拉伯图瓦尔
- 批准号:
1560843 - 财政年份:2016
- 资助金额:
$ 9.91万 - 项目类别:
Standard Grant
EAGER: Ferroelectric Memristive Devices Emulating Synapses in Subcortical Information Processors
EAGER:铁电忆阻器件模拟皮层下信息处理器中的突触
- 批准号:
1445386 - 财政年份:2014
- 资助金额:
$ 9.91万 - 项目类别:
Standard Grant
Semiconductor Technology 2020. The Workshop will be held in Rochester NY on May 14-16, 2007.
2020 年半导体技术。研讨会将于 2007 年 5 月 14 日至 16 日在纽约罗切斯特举行。
- 批准号:
0733611 - 财政年份:2007
- 资助金额:
$ 9.91万 - 项目类别:
Standard Grant
Leading Microelectronic Engineering Education to New Horizons
引领微电子工程教育新视野
- 批准号:
0530575 - 财政年份:2005
- 资助金额:
$ 9.91万 - 项目类别:
Standard Grant
Integration of Magnetic Tunnel Junctions with Quantum Negative Differential Resistance Devices
磁隧道结与量子负微分电阻器件的集成
- 批准号:
0501460 - 财政年份:2005
- 资助金额:
$ 9.91万 - 项目类别:
Continuing Grant
GOALI: High Permeability Ferrite Cores for Micro-Inductors
GOALI:用于微电感器的高磁导率铁氧体磁芯
- 批准号:
0219379 - 财政年份:2002
- 资助金额:
$ 9.91万 - 项目类别:
Standard Grant
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