CAREER: Van der Waals material integrated ultra-low power nanophotonics

职业：范德华材料集成超低功耗纳米光子学

• 批准号: 1845009
• 负责人: Arka Majumdar
• 金额: $ 50万
• 依托单位: University of Washington
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-04-01 至 2024-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1845009&HistoricalAwards=false
• 关键词: CAREER; Van; der; Waals; material

Non-Technical Description: Information processing and communication are at the heart of many technologies that enable modern life. These technologies have experienced exponential growth over the past several decades, thanks to the aggressive scaling of electronic devices. Next-generation information technologies, however, cannot be supported by only scaling transistors, and will rely heavily on data centers and cloud computing to drive performance improvements. We are already experiencing this trend with the increased investment from large technology companies in these sectors. To support this architecture, we need to bring optical interconnect technology (i.e., fiber optics), which is the backbone of the modern internet, to shorter length scales. Going beyond classical computing and communication technologies, quantum mechanics presents an opportunity to realize a paradigm shift in information technology. All these technologies, however, require ultra-low power optoelectronic devices; the power requirement is almost four orders of magnitude lower than that of existing devices. In my research, I aim to create these devices using atomically thin materials integrated with silicon nitride photonic circuits. Specifically, we aim to develop an optical modulator and optical switch, that can change light transmission using minimal power. These devices will be fabricated using well-developed semiconductor manufacturing technology. Along with developing new technology, the proposal aims to incorporate a design-build-test module in existing lecture-based nanophotonics courses to provide hands-on experience to the next-generation knowledge workers in the field of integrated photonics.Technical Description: Ultra-low-power tunable and nonlinear optical devices hold the key for numerous optical technologies including optoelectronic information processing, communication, and photonic quantum simulations of strongly correlated materials. Currently, the power required to modulate the light transmission through photonic devices or to observe a nonlinear input-output response is too high. This power can be reduced by spatially confining the electronic and photonic wave functions to a nanometer-length scale for an extended period of time. Nanophotonic resonators integrated with emerging low-dimensional materials present an attractive platform to create ultra-low-power optoelectronic devices. To that end, this proposal aims to integrate van der Waals (vdW) materials (e.g., graphene or transition metal dichalcogenides) and their heterostructures with silicon nitride nano-resonators. The choice of silicon nitride is motivated by its large bandgap and compatibility with large-scale semiconductor manufacturing. The vdW materials are chosen for their unique quantum properties, large exciton binding energies, and atomic thinness that enable extremely small active volumes and unprecedented material compatibility; they can be transferred onto any substrate without requiring explicit lattice matching. Combining numerical simulation, device fabrication, and optical characterization, three research aims will be pursued: (i) develop an experiment-driven model for vdW material?cavity coupling; (ii) demonstrate optical nonlinearity at the few photon level in a coupled cavity array, and (iii) create an electro-optic modulator with attojoule electrical energy per switching. While the initial applications of these devices will be in ultra-low-power classical optical information science, the same platform can be used for developing quantum technologies, including quantum many-body simulations and quantum signal transduction.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述：信息处理和通信是现代生活的许多技术的核心。由于电子设备的不断扩展，这些技术在过去几十年中经历了指数级增长。然而，下一代信息技术不能仅靠缩小晶体管来支持，而将严重依赖数据中心和云计算来推动性能改进。随着大型科技公司在这些领域的投资增加，我们已经经历了这一趋势。为了支持这种架构，我们需要将现代互联网的支柱光互连技术（即光纤）引入更短的长度尺度。超越经典计算和通信技术，量子力学提供了实现信息技术范式转变的机会。然而，所有这些技术都需要超低功耗的光电器件；功率要求几乎比现有设备低四个数量级。在我的研究中，我的目标是使用与氮化硅光子电路集成的原子薄材料来创建这些设备。具体来说，我们的目标是开发一种光调制器和光开关，可以使用最小的功率改变光传输。这些设备将使用成熟的半导体制造技术来制造。在开发新技术的同时，该提案旨在将设计-构建-测试模块纳入现有的基于讲座的纳米光子学课程中，为集成光子学领域的下一代知识工作者提供实践经验。低功率可调谐和非线性光学器件是众多光学技术的关键，包括光电信息处理、通信和强相关材料的光子量子模拟。目前，通过光子器件调制光传输或观察非线性输入输出响应所需的功率太高。通过将电子波和光子波函数在空间上长时间限制在纳米长度范围内，可以降低这种功率。与新兴低维材料集成的纳米光子谐振器为创建超低功耗光电器件提供了一个有吸引力的平台。为此，该提案旨在将范德华（vdW）材料（例如石墨烯或过渡金属二硫属化物）及其异质结构与氮化硅纳米谐振器集成。选择氮化硅的原因是其大带隙和与大规模半导体制造的兼容性。选择 vdW 材料是因为其独特的量子特性、大的激子结合能和原子薄度，可实现极小的活性体积和前所未有的材料兼容性；它们可以转移到任何基材上，而不需要明确的晶格匹配。结合数值模拟、器件制造和光学表征，我们将追求三个研究目标：(i) 开发 vdW 材料腔耦合的实验驱动模型； (ii) 展示耦合腔阵列中少数光子能级的光学非线性，以及 (iii) 创建每次切换具有阿托焦耳电能的电光调制器。虽然这些设备的最初应用将是超低功耗经典光学信息科学，但同一平台可用于开发量子技术，包括量子多体模拟和量子信号转导。该奖项反映了 NSF 的法定使命，并具有通过使用基金会的智力优点和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

High-precision local transfer of van der Waals materials on nanophotonic structures

范德华材料在纳米光子结构上的高精度局部转移

• DOI: 10.1364/ome.383255
• 发表时间: 2019-07-09
• 期刊: Optical Materials Express
• 影响因子: 2.8
• 作者: D. Rosser;Taylor Fryett;Abhi Saxena;A. Ryou;A. Majumdar
• 通讯作者: A. Majumdar

Dispersive coupling between MoSe 2 and an integrated zero-dimensional nanocavity

MoSe 2 与集成零维纳米腔之间的色散耦合

• DOI: 10.1364/ome.443536
• 发表时间: 2021-12
• 期刊: Optical Materials Express
• 影响因子: 2.8
• 作者: Rosser, David;Gerace, Dario;Chen, Yueyang;Liu, Yifan;Whitehead, James;Ryou, Albert;Andreani, Lucio C.;Majumdar, Arka
• 通讯作者: Majumdar, Arka

Visible Wavelength Flatband in a Gallium Phosphide Metasurface

磷化镓超表面中的可见波长平带

• DOI: 10.1021/acsphotonics.3c00175
• 发表时间: 2023-02-06
• 期刊: ACS Photonics
• 影响因子: 7
• 作者: Christopher Munley;Arnab Manna;David Sharp;Minho Choi;Hao A. Nguyen;B. Cossairt;Mo Li;A. Barnard;A. Majumdar
• 通讯作者: A. Majumdar

Optimal condition to probe strong coupling of two-dimensional excitons and zero-dimensional cavity modes

探测二维激子与零维腔模强耦合的最佳条件

• DOI: 10.1103/physrevb.104.235436
• 发表时间: 2021-12
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: Rosser, David;Gerace, Dario;Andreani, Lucio C.;Majumdar, Arka
• 通讯作者: Majumdar, Arka

Coupling of photonic crystal cavity and interlayer exciton in heterobilayer of transition metal dichalcogenides

过渡金属二硫化物异质双层中光子晶体腔与层间激子的耦合

• DOI: 10.1088/2053-1583/ab597d
• 发表时间: 2020-01
• 期刊: 2D Materials
• 影响因子: 5.5
• 作者: Rivera, Pasqual;Fryett, Taylor K;Chen, Yueyang;Liu, Chang;Ray, Essance;Hatami, Fariba;Yan, Jiaqiang;Mandrus, David;Yao, Wang;Majumdar, Arka;et al
• 通讯作者: et al