CAREER: Van der Waals material integrated ultra-low power nanophotonics

职业：范德华材料集成超低功耗纳米光子学

• 批准号: 1845009
• 负责人: Arka Majumdar
• 金额: $ 50万
• 依托单位: University of Washington
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-04-01 至 2024-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1845009&HistoricalAwards=false
• 关键词: CAREER; Van; der; Waals; material

Non-Technical Description: Information processing and communication are at the heart of many technologies that enable modern life. These technologies have experienced exponential growth over the past several decades, thanks to the aggressive scaling of electronic devices. Next-generation information technologies, however, cannot be supported by only scaling transistors, and will rely heavily on data centers and cloud computing to drive performance improvements. We are already experiencing this trend with the increased investment from large technology companies in these sectors. To support this architecture, we need to bring optical interconnect technology (i.e., fiber optics), which is the backbone of the modern internet, to shorter length scales. Going beyond classical computing and communication technologies, quantum mechanics presents an opportunity to realize a paradigm shift in information technology. All these technologies, however, require ultra-low power optoelectronic devices; the power requirement is almost four orders of magnitude lower than that of existing devices. In my research, I aim to create these devices using atomically thin materials integrated with silicon nitride photonic circuits. Specifically, we aim to develop an optical modulator and optical switch, that can change light transmission using minimal power. These devices will be fabricated using well-developed semiconductor manufacturing technology. Along with developing new technology, the proposal aims to incorporate a design-build-test module in existing lecture-based nanophotonics courses to provide hands-on experience to the next-generation knowledge workers in the field of integrated photonics.Technical Description: Ultra-low-power tunable and nonlinear optical devices hold the key for numerous optical technologies including optoelectronic information processing, communication, and photonic quantum simulations of strongly correlated materials. Currently, the power required to modulate the light transmission through photonic devices or to observe a nonlinear input-output response is too high. This power can be reduced by spatially confining the electronic and photonic wave functions to a nanometer-length scale for an extended period of time. Nanophotonic resonators integrated with emerging low-dimensional materials present an attractive platform to create ultra-low-power optoelectronic devices. To that end, this proposal aims to integrate van der Waals (vdW) materials (e.g., graphene or transition metal dichalcogenides) and their heterostructures with silicon nitride nano-resonators. The choice of silicon nitride is motivated by its large bandgap and compatibility with large-scale semiconductor manufacturing. The vdW materials are chosen for their unique quantum properties, large exciton binding energies, and atomic thinness that enable extremely small active volumes and unprecedented material compatibility; they can be transferred onto any substrate without requiring explicit lattice matching. Combining numerical simulation, device fabrication, and optical characterization, three research aims will be pursued: (i) develop an experiment-driven model for vdW material?cavity coupling; (ii) demonstrate optical nonlinearity at the few photon level in a coupled cavity array, and (iii) create an electro-optic modulator with attojoule electrical energy per switching. While the initial applications of these devices will be in ultra-low-power classical optical information science, the same platform can be used for developing quantum technologies, including quantum many-body simulations and quantum signal transduction.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述：信息处理和沟通是许多能够实现现代生活的技术的核心。由于电子设备的积极缩放，这些技术在过去几十年中经历了指数增长。但是，下一代信息技术不能仅通过缩放晶体管来支持，并且将严重依赖数据中心和云计算来推动性能改进。我们已经经历了这一趋势，这些领域的大型技术公司的投资增加了。为了支持这种体系结构，我们需要携带光学互连技术（即光纤），即现代互联网的骨干，以缩短长度尺度。量子力学超越了经典的计算和通信技术，为实现信息技术的范式转移提供了机会。但是，所有这些技术都需要超低功率光电设备。功率要求几乎比现有设备低四个数量级。在我的研究中，我旨在使用与氮化硅光子电路集成的原子薄材料来创建这些设备。具体而言，我们旨在开发光学调制器和光学开关，该开关可以使用最小的功率来改变光线传输。这些设备将使用发达的半导体制造技术制造。随着开发新技术的发展，该提案旨在将设计建造测试模块纳入现有的基于讲座的纳米光子学课程中，以在集成光子学领域为下一代知识工作者提供动手体验。相关材料。当前，通过光子设备调节光传输或观察非线性输入输出响应所需的功率太高。可以通过将电子和光子波函数限制在长时间的纳米长度尺度上来降低这种功率。与新兴的低维材料集成的纳米光谐振器具有一个有吸引力的平台，可以创建超低功率光电设备。为此，该提案旨在将范德华（VDW）材料（例如石墨烯或过渡金属二核苷）及其异质结构与硝酸硅纳米透明剂相结合。硝化硅的选择是由其较大的带隙和与大规模半导体制造的兼容性的动机。 VDW材料是用于其独特的量子特性，大激子结合能和原子薄度的选择，从而使极小的活性体积和前所未有的材料兼容。可以将它们转移到任何基材上，而无需显式晶格匹配。结合了数值模拟，设备制造和光学表征，将追求三个研究目标：（i）开发用于VDW材料的实验驱动模型？空腔耦合； （ii）在耦合的腔阵列中表明在几个光子水平上的光学非线性，（iii）创建一个带有每个开关的attojoule电能的电气调节器。尽管这些设备的最初应用将用于超低功率的经典光学信息科学，但可以将同一平台用于开发量子技术，包括量子多体型模拟和量子信号转换。这项奖项反映了NSF的法定任务，并通过该基金会的知识分子优点和广泛的影响来评估NSF的法定任务，并被认为是值得的。

项目成果

High-precision local transfer of van der Waals materials on nanophotonic structures

• DOI: 10.1364/ome.383255
• 发表时间: 2019-07
• 期刊: Optical Materials Express
• 影响因子: 2.8
• 作者: D. Rosser;Taylor Fryett;Abhi Saxena;A. Ryou;A. Majumdar

Visible Wavelength Flatband in a Gallium Phosphide Metasurface

• DOI: 10.1021/acsphotonics.3c00175
• 发表时间: 2023-02
• 期刊: ACS Photonics
• 影响因子: 7
• 作者: Christopher Munley;Arnab Manna;David Sharp;Minho Choi;Hao A. Nguyen;B. Cossairt;Mo Li;A. Barnard;A. Majumdar

Dispersive coupling between MoSe 2 and an integrated zero-dimensional nanocavity

MoSe 2 与集成零维纳米腔之间的色散耦合

• DOI: 10.1364/ome.443536
• 发表时间: 2021
• 期刊: Optical Materials Express
• 影响因子: 2.8
• 作者: Rosser, David;Gerace, Dario;Chen, Yueyang;Liu, Yifan;Whitehead, James;Ryou, Albert;Andreani, Lucio C.;Majumdar, Arka
• 通讯作者: Majumdar, Arka

Optimal condition to probe strong coupling of two-dimensional excitons and zero-dimensional cavity modes

探测二维激子与零维腔模强耦合的最佳条件

• DOI: 10.1103/physrevb.104.235436
• 发表时间: 2021
• 期刊: Physical Review B
• 影响因子: 3.7
• 作者: Rosser, David;Gerace, Dario;Andreani, Lucio C.;Majumdar, Arka
• 通讯作者: Majumdar, Arka

Coupling of photonic crystal cavity and interlayer exciton in heterobilayer of transition metal dichalcogenides

过渡金属二硫化物异质双层中光子晶体腔与层间激子的耦合

• DOI: 10.1088/2053-1583/ab597d
• 发表时间: 2020
• 期刊: 2D Materials
• 影响因子: 5.5
• 作者: Rivera, Pasqual;Fryett, Taylor K;Chen, Yueyang;Liu, Chang-Hua;Ray, Essance;Hatami, Fariba;Yan, Jiaqiang;Mandrus, David;Yao, Wang;Majumdar, Arka
• 通讯作者: Majumdar, Arka