EAGER: Advancing High-Efficiency Nanoscale Antiferromagnetic Spintronics with Two-Dimensional Half Metals

EAGER：利用二维半金属推进高效纳米级反铁磁自旋电子学

• 批准号: 1753380
• 负责人: Xiang Zhang
• 金额: $ 10万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2017
• 资助国家: 美国
• 起止时间: 2017-09-01 至 2020-02-29
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1753380&HistoricalAwards=false
• 关键词: EAGER; Advancing; Efficiency; Nanoscale; Antiferromagnetic

Antiferromagnets hold promise in spintronics, due to the unique advantages over ferromagnets, such as high phase transition temperatures and null stray field. These characteristics make antiferromagnet appealing for high-density integrated devices, because each magnetic bit is robust against thermal and environmental magnetic field perturbation, and adjacent bits does not interfere mutually. However, zero-magnetization, an intrinsic attribute of antiferromagnet, usually is considered to be a primary factor limiting its applications. Despite of zero-magnetization, the Fermi surface electrons can be 100% spin-polarized, highly desirable for high-efficiency spintronic devices. Through rational material design of antiferromagnetic half metals, a novel type of spin field effect transistor can be realized. The work will fundamentally advance the nanoscale spintronics and the applications in information processing and storage. This project supports the study of a novel type of two-dimensional materials, antiferromagnetic half metals, and the development of spin field effect transistors. The study can fundamentally impact the state of the art spintronics and the related applications in information processing and storage. This work would also provide an excellent platform for education activities. Such an interdisciplinary research brings together researchers from material scientists, physicists, and electronic engineers. It requires concerted efforts to design and synthesize the promising antiferromagnetic materials, fabricate nanoscale transistors, and measure and optimize the device performance.

由于相对于铁磁体具有独特的优势，例如高相变温度和零杂散场，反铁磁体在自旋电子学中前景广阔。这些特性使得反铁磁体对于高密度集成器件具有吸引力，因为每个磁位对于热和环境磁场扰动都很鲁棒，并且相邻位不会相互干扰。然而，反铁磁体的固有属性零磁化通常被认为是限制其应用的主要因素。尽管为零磁化，费米表面电子可以 100% 自旋极化，这对于高效自旋电子器件来说是非常理想的。通过反铁磁半金属的合理材料设计，可以实现一种新型的自旋场效应晶体管。这项工作将从根本上推进纳米级自旋电子学及其在信息处理和存储方面的应用。该项目支持新型二维材料、反铁磁半金属的研究以及自旋场效应晶体管的开发。该研究可以从根本上影响最先进的自旋电子学以及信息处理和存储方面的相关应用。这项工作也将为教育活动提供一个极好的平台。这种跨学科研究汇集了材料科学家、物理学家和电子工程师的研究人员。它需要共同努力来设计和合成有前景的反铁磁材料、制造纳米级晶体管以及测量和优化器件性能。

项目成果

Room-Temperature Giant Stark Effect of Single Photon Emitter in van der Waals Material

范德华材料中单光子发射器的室温巨斯塔克效应

• DOI: 10.1021/acs.nanolett.9b02640
• 发表时间: 2019-09
• 期刊: Nano Letters
• 影响因子: 10.8
• 作者: Xia, Yang;Li, Quanwei;Kim, Jeongmin;Bao, Wei;Gong, Cheng;Yang, Sui;Wang, Yuan;Zhang, Xiang
• 通讯作者: Zhang, Xiang

Enhanced ferroelectricity in ultrathin films grown directly on silicon

直接在硅上生长的超薄膜的增强铁电性

• DOI: 10.1038/s41586-020-2208-x
• 发表时间: 2020-04-01
• 期刊: Nature
• 影响因子: 64.8
• 作者: S. Cheema;D. Kwon;N. Shanker;R. dos Reis;S. Hsu;Jun Xiao;Haigang Zhang;Ryan Wagner;Adhiraj
• 通讯作者: Adhiraj

Epitaxial Single-Layer MoS 2 on GaN with Enhanced Valley Helicity

具有增强谷螺旋度的 GaN 上外延单层 MoS 2

• DOI: 10.1002/adma.201703888
• 发表时间: 2018-02
• 期刊: Advanced Materials
• 影响因子: 29.4
• 作者: Wan, Yi;Xiao, Jun;Li, Jingzhen;Fang, Xin;Zhang, Kun;Fu, Lei;Li, Pan;Song, Zhigang;Zhang, Hui;Wang, Yilun;et al
• 通讯作者: et al

Nonlinear Optics at Excited States of Exciton Polaritons in Two-Dimensional Atomic Crystals

二维原子晶体中激子极化子激发态的非线性光学

• DOI: 10.1021/acs.nanolett.9b04811
• 发表时间: 2020-03
• 期刊: Nano Letters
• 影响因子: 10.8
• 作者: Liu, Xiaoze;Yi, Jun;Li, Quanwei;Yang, Sui;Bao, Wei;Ropp, Chad;Lan, Shoufeng;Wang, Yuan;Zhang, Xiang
• 通讯作者: Zhang, Xiang

Multiferroicity in atomic van der Waals heterostructures

原子范德华异质结构的多铁性

• DOI: 10.1038/s41467-019-10693-0
• 发表时间: 2019-06-14
• 期刊: Nature Communications
• 影响因子: 16.6
• 作者: Cheng Gong;Eun Mi Kim;Yuang Wang;Geunsik Lee;Xiang Zhang
• 通讯作者: Xiang Zhang