High-Voltage Optically-Activated Wide-Bandgap Rapid Fault Isolation Device

高压光激活宽带隙快速故障隔离装置

• 批准号: 1509757
• 负责人: Sudip Mazumder
• 金额: $ 33.93万
• 依托单位: University of Illinois at Chicago
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-08-01 至 2021-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1509757&HistoricalAwards=false
• 关键词: Voltage; Optically; Activated; Wide; Bandgap

Rapid Fault Isolation (RFI) in legacy and/or emerging AC and DC power systems has emerged as an extremely important issue from the reliability, stability, power quality, and capacity utilization viewpoints. This project seeks to develop a silicon-carbide based optically-activated gate-turn-off thyristor (SiC OA-GTO) that is expected to be a game changer in RFI, with clear device and system level benefits based on radically new innovations. The SiC OA-GTO will also have clear benefits for several major applications including pulsed-power systems, transfer switches, high-voltage power electronic converters for medium-voltage drives, energy storage, step-up-transformerless integration of solar and wind energy, and flexible AC transmission systems (FACTS), to name a few. This National Science Foundation (NSF) project will provide graduate- and undergraduate-level research and education opportunities, including a significant representation of minority and cross-disciplinary students. Guidance will be provided to one middle-school student each summer. The results of the research will be integrated into the course ECE 442 (Power semiconductor devices and integrated circuits). The PI will leverage his demonstrated mechanisms of research dissemination (for his ongoing and prior NSF projects) to support this NSF project.The technical objectives of this project are as follows: 1) To synthesize a high-gain monolithic SiC based optically-activated (OA) gate-turn-off thyristor (i.e., SiC OA-GTO) for realization of a Rapid Fault Isolation Device (RFID) (i.e., SiC OA-RFID). The SiC OA-RFID is expected to support high breakdown voltage, high rated and surge currents, high slew rate, low on-state forward drop, high junction temperature, and operation using low average optical triggering power; 2) To design an optimal photonic package for the SiC OA-GTO and then using it realize a SiC OA-RFID to address reduced parasitic inductance given the presence of large di/dt, thermal robustness, and uniform and efficient triggering and mitigation of current filamentation by optimal beam localization; and 3) Experimental I-V and switching characterizations of the fabricated prototype device at package levels for performance validations. The SiC OA-GTO device for the OA-RFID incorporates several key features: a) a monolithic SiC device structure that mitigates parasitic inductances yielding high di/dt; b) rapid turn-on and turn-off due to novel optical excitation and unity-gain turn off; c) very low optical power requirement due to thyristor action and conductivity modulation; d) low forward drop; e) seamless voltage and current scaling; f) high-voltage blocking and current conduction; g) high thermal conductivity; h) novel optical triggering that simplifies switching; and i) no dependence on oxide layer. The new optical single-bias device, unlike leading high voltage Si and SiC based devices yields immunity against noise, enhanced reliability, and reduced delay due to direct photogeneration. Additionally, optical triggering eliminates complexity associated with negative gate referencing. The optical device enhances isolation between the SiC OA-GTO power stage and the low-voltage control stage. Photonic modulation of the device enables dynamic control of device dynamics of the SiC OA-GTO yielding reduced delay and improved on-state and off-state characteristics.

从可靠性，稳定性，功率质量和容量利用率的角度来看，遗产和/或新兴AC和DC电源系统中的快速故障隔离（RFI）已成为一个极为重要的问题。该项目旨在开发一个基于硅胶的光学激活的闸门转变晶闸管（SIC OA-GTO），预计将是RFI的游戏规则改变者，具有基于根本新创新的清晰设备和系统级别的好处。 SIC OA-GTO还将为多种主要应用程序带来明显的好处，包括脉冲功率系统，转移开关，用于中型电压驱动器的高压电源电子转换器，能源存储，太阳能和风能的无效转换无效集成以及灵活的交流传输系统（FACTS）（事实），等等。该国家科学基金会（NSF）项目将提供研究生和本科研究生的研究和教育机会，包括对少数民族和跨学科学生的重要代表。每年夏天将向一名中学生提供指导。研究结果将集成到ECE 442课程中（功率半导体设备和集成电路）。 The PI will leverage his demonstrated mechanisms of research dissemination (for his ongoing and prior NSF projects) to support this NSF project.The technical objectives of this project are as follows: 1) To synthesize a high-gain monolithic SiC based optically-activated (OA) gate-turn-off thyristor (i.e., SiC OA-GTO) for realization of a Rapid Fault Isolation Device (RFID) (i.e., sic oa-rfid）。 预计SIC OA-RFID将支持高击球电压，高额定电流和浪涌电流，高振动速率，较低的状态前跌落，高连接温度以及使用低平均光学触发功率运行； 2）为SIC OA-GTO设计最佳的光子封装，然后使用它实现SIC OA-RFID，以解决降低的寄生电感，因为存在较大的DI/DT，热稳定性，以及均匀有效的触发和有效的触发和缓解当前丝束的最佳光束通过最佳束定位； 3）在包装级别上制造的原型设备的实验I-V和切换表征，以进行性能验证。 OA-RFID的SIC OA-GTO设备结合了几个关键特征：a）单层SIC设备结构，可减轻寄生电感，产生高DI/DT； b）由于新颖的光学激发和统一增益而关闭的快速上门和关闭； c）由于晶闸管的作用和电导率调节，光功率的需求非常低； d）低向前下降； e）无缝电压和电流缩放； f）高压阻断和电流传导； g）高热电导率； h）简化切换的新型光学触发； i）不依赖氧化物层。与领先的高压SI和基于SIC的设备不同，新的光学单偏置设备可产生噪声，增强的可靠性以及由于直接光生成引起的延迟的免疫力。此外，光学触发消除了与负门引用相关的复杂性。光学设备增强了SIC OA-GTO功率阶段与低压控制阶段之间的隔离。设备的光子调制可以对SIC OA-GTO的设备动力学进行动态控制，从而减少了延迟并改善了州内和状态特征。