Photonically-triggered SiC-GaN and Superjunction based High-gain, High-temperature, and High-voltage Bipolar Power Transistor

基于光子触发 SiC-GaN 和超结的高增益、高温、高压双极功率晶体管

• 批准号: 0823983
• 负责人: Sudip Mazumder
• 金额: $ 30.76万
• 依托单位: University of Illinois at Chicago
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-08-15 至 2014-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0823983&HistoricalAwards=false
• 关键词: Photonically; triggered; SiC; GaN; Superjunction

Project objectives are 1) Realizing a high-gain, high-voltage and high-temperature monolithic SiC-GaN-OGBT (optically-gated bipolar transistor) triggered in a non-latched manner using a low-power short-wavelength photonic source; 2) Reducing photonic-triggering power by optimization of optical-absorption efficiency using a GaN-SiC heterojunction structure; 3) Reducing OGBT conduction drop using localized charge-compensation and conductivity modulation; 4) Experimental characterizations.Intellectual Merit:The emitter and base of the OGBT are made of GaN while the collector is made of SiC, thus achieving optical efficiency and retaining excellent breakdown voltage and temperature characteristics of SiC. OGBT eliminates oxide-reliability problem at high temperature and breakdown-voltage limitation in insulated-gate devices. N-type SiC substrate-based OGBT structure circumvents the problem of unavailability of P-type substrate required for N-channel SiC IGBTs. Optical triggering of OGBT eliminates negative-gate-bias referencing need for N-substrate SiC IGBT. Superjunction-based charge-compensation technique in SiC-GaN-OGBT yields high blocking voltage and low forward-conduction drop. Proposed work explores ohmic-contact issues for connecting N-GaN to P-SiC and hetero-epitaxial growth of GaN on SiC. OGBT has implications for high-power, high-temperature, and high-frequency power system with enhanced reliability due to optical isolation, EMI and parasitic-noise immunity, device stress mitigation, and synergistic integration of photonic and wide-bandgap device structures. Broader Impacts:Broad applications include fly-by-light, electric ship, electric/hybrid vehicles, telecommunication, spacecrafts, FACTs, pulsed power, and microwave power amplifiers. The results of the research will be integrated into 2 undergraduate/graduate courses. The project will support 1 Ph.D. student and aims to incorporate, per year, 4 senior-design and undergraduate-research students (including 2 under-represented and 1 honor-role student), and 1 middle-school student.

项目目标是1）使用低功率短波长光子源以非斑点方式触发的高增益，高压和高温单体单层SIC-GAN-OGBT（光门晶晶体管）； 2）通过使用Gan-SIC异质结构优化光子吸收效率来降低光子触发功率； 3）使用局部电荷补偿和电导率调节降低OGBT传导下降； 4）实验性特征。智能优点：OGBT的发射极和基部是由GAN制成的，而收集器则由SIC制成，从而达到了光学效率并保留了SIC的出色分解电压和温度特性。 OGBT消除了在隔热栅极设备中高温和崩溃 - 电压限制下的氧化物可靠性问题。基于N型SIC底物的OGBT结构规定了N通道SIC IGBT所需的P型底物无法获得的问题。 OGBT的光学触发消除了N-Substrate SIC IGBT的负面偏置引用需求。基于SIC-GAN-OGBT的基于超结的电荷补偿技术可产生高阻断电压和低向前传导的下降。拟议的工作探讨了欧姆接触问题，用于将n-gan连接到p-sic和hetho hetho-epitagial on sic on sic上。 OGBT对高功率，高温度和高频电力系统具有影响，由于光学隔离，EMI和寄生液免疫，减轻设备应力以及光子和宽带设备结构的协同整合，具有增强的可靠性。更广泛的影响：广泛的应用包括逐灯，电动船，电动/混合动力汽车，电信，航天器，事实，脉冲功率和微波炉功率放大器。研究结果将纳入2个本科/研究生课程。该项目将支持1博士学位。学生和目标是每年（每年4个高级设计和本科研究生）（包括2名代表性不足和1名荣誉角学生）和1名中学生。