Novel Optically-Activated High-Voltage and Single-Bias Wide-Bandgap High-Frequency Thyristor for Next-Generation Smart Grid

用于下一代智能电网的新型光激活高压单偏压宽带隙高频晶闸管

• 批准号: 1202384
• 负责人: Sudip Mazumder
• 金额: $ 31.56万
• 依托单位: University of Illinois at Chicago
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-10-01 至 2017-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1202384&HistoricalAwards=false
• 关键词: Novel; Optically; Activated; Voltage; Single

Research Objectives and Approaches:The objectives of this project are as follows: 1) To realize and optimize a high-gain, high voltage (HV) (10 kV, 35 A), and high-temperature SiC Integrated Thyristor, which is triggered in a non-latched manner using a very low power and short-wavelength single monochromatic photonic source by hybrid integration; 2) To reduce the optical-triggering power requirement of the SiC-based Integrated Thyristor by optimization of optical-absorption efficiency, lifetime control, and localized photogeneration-recombination process; and 3) Experimental characterizations of the fabricated prototype device for performance validation.Intellectual Merit:The novel all-optical and single-bias (i.e. only the power bias) SiC Integrated Thyristor improves upon all core all-electrical multi-bias HV integrated thyristors including ETO/IGCT/MTO. Further, the Integrated Thyristor also provides a superior solution to the state-of-the-art SiC DMOSFET and SiC IGBT for the HV power systems in multiple aspects. The bipolar device provides numerous device and system level advantages with regard to response time and switching frequency, reliability, ease of triggering, on-state drop, current and voltage scalabilities, fabrication, thermal conductivity, electromagnetic-interference immunity, electrical isolation, and energy-conversion efficiency.Broader Impacts:The impact of the HV SiC Integrated Thyristor is expected to be radical with applications including direct-grid-interface solar, wind, fuel-cell inverters, energy-storage systems, FACTS, power-quality conditioners, HVDC systems, motor drives, solid-state transformers, fault-current limiters, and pulsed-power systems. The proposed project will provide doctoral education to a Ph.D. researcher. Further, multiple undergraduate (including minority) students and middle-school students will be provided research/educational opportunities. Results of the research will be integrated into an undergraduate and a graduate course at UIC.

研究目标和方法：该项目的目标如下：1）实现和优化高增强，高压（HV）（10 kV，35 a）和高温SIC综合晶杆机，使用非常低的功率和短波长的单色光电源以非斑点的方式触发，这是由非锁存的方式触发的。 2）通过优化光学吸收效率，终生控制和局部的光构 - 结构过程来降低基于SIC的集成晶闸管的光学触发功率需求；和3）用于性能验证的制造原型设备的实验表征。智能优点：新型的全辐射和单个偏置（即仅功率偏见）SIC集成的晶状体在所有核心全电动多偏置多偏置HV集成的晶状体上都改善了包括eto/igct/mto。此外，综合的晶闸管还为HV功率系统在多个方面提供了最先进的SIC DMOSFET和SIC IGBT的优越解决方案。双极设备在响应时间和开关频率，可靠性，易于触发，状态下降，当前和电压缩小性，制造，导热率，电导率，电磁切换免疫力，电气隔离和能量转换效率的影响范围内的影响力的影响：HISIC的影响：太阳能，风，燃料电池逆变器，能源储存系统，事实，功率质量调节剂，HVDC系统，电动机驱动器，固态变压器，断层电流限制器和脉冲功率系统。拟议的项目将向博士提供博士教育。研究员。此外，将为多个本科生（包括少数民族）学生和中学生提供研究/教育机会。该研究的结果将纳入UIC的本科和研究生课程。