SBIR Phase II: Novel Technologies to Enable High Volume, Extreme Ultraviolet Manufacturing of Integrated Circuits

SBIR 第二阶段：实现集成电路大批量、极紫外制造的新技术

• 批准号: 1457418
• 负责人: Supriya Jaiswal
• 金额: $ 75万
• 依托单位: Astrileux Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-03-01 至 2020-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1457418&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Novel; Technologies

The broader impact/commercial potential of this Small Business Innovation Research (SBIR) Phase II project are to accelerate the arrival of next generation computing technology creating faster, smaller more powerful mobile devices, renewing the expected technological pace of development set by Moore's law, and to enable global access to next generation electronics. The technology developed here will enable new extreme ultraviolet lithography in semiconductor manufacturing. The developments will promote learning, understanding and capability in commercialization and scalability of nanotechnology engineering. This Small Business Innovation Research (SBIR) Phase II project aims to evaluate the feasibility of new extreme ultraviolet (EUV) technologies which enable high volume manufacture of Integrated Circuits at 14nm and smaller. Currently capital equipment manufacturers are facing significant challenges in meeting the International Technology Roadmap for Semiconductors requirements for high volume manufacturing of integrated circuit chips. This has caused severe ramifications to chipmakers on the success of next generation IC manufacturing and fabrication facility costs. Successful results from the work proposed would represent notable progress in high volume manufacturing using EUV capital equipment. The intellectual merit of this proposed work forms the basis of new state of the art industry architecture designed for volume manufacturing; a pursuit that would subsequently encourage new markets and applications using next generation technology overcoming cost challenges in high volume manufacturing processes.

这项小型企业创新研究（SBIR）第二阶段项目的更广泛的影响/商业潜力是加速下一代计算技术的到来，从而创造了更快，更小的更强大的移动设备，续签摩尔法律设定的预期技术步伐，并促进全球访问下一代电子产品。这里开发的技术将使半导体制造中的新的极端紫外线光刻。 这些发展将促进纳米技术工程商业化和可扩展性的学习，理解和能力。这项小型企业创新研究（SBIR）II期项目旨在评估新的极端紫外线（EUV）技术的可行性，该技术能够在14nm和较小的情况下大量生产综合电路。目前，资本设备制造商在满足国际技术路线图的半导体要求方面面临重大挑战，以实现集成电路芯片的大量制造。 这给芯片制造商带来了严重的后果，即下一代IC制造和制造设施成本的成功。提议的工作的成功结果将代表使用EUV资本设备在大量生产方面的显着进步。这项提出的工作的智力优点构成了设计用于批量制造的新型制度架构的基础；随后使用下一代技术克服高批量制造过程中的成本挑战的新市场和应用的追求。