SBIR Phase II: Thermally-optimized power amplifiers for next-generation telecommunication and radar

SBIR 第二阶段:用于下一代电信和雷达的热优化功率放大器

基本信息

  • 批准号:
    2335504
  • 负责人:
  • 金额:
    $ 100万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Cooperative Agreement
  • 财政年份:
    2024
  • 资助国家:
    美国
  • 起止时间:
    2024-03-15 至 2026-02-28
  • 项目状态:
    未结题

项目摘要

This Small Business Innovation Research (SBIR) Phase II project enables the next generation of wireless communication that makes our world smarter and safer. The promise of 5G is to enable unprecedented connectivity - smart cars, smart homes, etc. The technology also promises equity of information in the form of broadband coverage across the United States. Thus far, the dream of 5G has been limited due to poor signal range and prohibitive cooling costs. This solution is a thermally-optimized power amplifier that dramatically increases signal range and stays cool - reducing costs. As a result of boosted signal range, broadband coverage will be incentivized in more rural areas, preventing the deepening of the digital divide. Lower costs enable next-generation connectivity between smart devices - such as that between cars which can dramatically lower motor vehicle accidents. Finally, the development and production of this technology, all within the United States, will contribute to the ongoing effort to revitalize the nation’s semiconductor industry.This Small Business Innovation Research (SBIR) Phase II project focuses on the scaling and commercialization of an innovative power amplifier technology. State-of-the-art power amplifiers (PAs) are made of gallium nitride. In many cases, the performance of these PAs is thermally limited - they can't handle the heat they generate during operation. The result for wireless communication systems, such as 5G telecom and radar systems, is limited signal range and high cooling costs. By inserting a thin aluminum nitride layer in its semiconductor stack, the power amplifiers developed in this Phase II project will have significantly improved thermal management, resulting in increased efficiency and power handling capabilities. The resulting power amplifiers will reduce cooling cost and increase signal range, enabling next generation telecommunications and advanced radar systems. In this project, production will transition from the university lab to a scaled, commercial process. This transition will involve multiple rounds of power amplifier fabrication and assessment, as well as the formation and maintenance of key partnerships. The result of this project will be a demonstration of the minimum viable product at commercial scale.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
这项小型企业创新研究(SBIR)II期项目使下一代无线通信使我们的世界更加聪明,更安全。 5G的承诺是实现前所未有的连通性 - 智能汽车,智能家居等。该技术还承诺以美国宽带覆盖范围的形式提供信息权益。这远,由于信号范围差和禁止冷却成本,5G的梦想受到限制。该解决方案是一种热优化的功率放大器,可显着增加信号范围并保持凉爽 - 降低成本。由于信号范围增强,宽带覆盖范围将在更粗糙的区域增加,从而阻止数字鸿沟加深。较低的成本可以使智能设备之间的下一代连通性(例如可以大大降低汽车事故的汽车之间的连接。最后,这项技术的发展和生产在美国境内,将有助于振兴美国半导体行业的持续努力。这项小型企业创新研究(SBIR)II阶段项目着重于创新功率放大器技术的扩展和商业化。最先进的功率放大器(PAS)由氮化炮制成。在许多情况下,这些PA的性能受到热限制 - 它们无法处理操作过程中产生的热量。无线通信系统(例如5G电信和雷达系统)的结果是信号范围有限和高冷却成本。通过在其半导体堆栈中插入稀薄的氮化铝层,在此II阶段项目中开发的功率放大器将显着改善热管理,从而提高效率和功率处理能力。产生的功率放大器将降低冷却成本并增加信号范围,从而实现下一代电信和高级雷达系统。在这个项目中,生产将从大学实验室过渡到规模的商业过程。这种过渡将涉及多轮功率放大器的制造和评估,以及主要合作伙伴关系的形成和维护。该项目的结果将是商业规模上最低可行产品的演示。该奖项反映了NSF的法定任务,并通过使用基金会的知识分子优点和更广泛的影响审查标准来评估被认为是宝贵的支持。

项目成果

期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)

暂无数据

数据更新时间:2024-06-01

Austin Hickman的其他基金

STTR Phase I: Scaling of AlN/GaN/AlN HEMTs via molecular beam epitaxy
STTR 第一阶段:通过分子束外延缩放 AlN/GaN/AlN HEMT
  • 批准号:
    2112247
    2112247
  • 财政年份:
    2021
  • 资助金额:
    $ 100万
    $ 100万
  • 项目类别:
    Standard Grant
    Standard Grant

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