Metal/Indium-Zinc Oxide Semiconductor Heterostructures: A Platform for Radio-Frequency Devices

金属/氧化铟锌半导体异质结构：射频器件平台

• 批准号: 1409590
• 负责人: David Paine
• 金额: $ 30万
• 依托单位: Brown University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-07-01 至 2018-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1409590&HistoricalAwards=false
• 关键词: Metal; Indium; Zinc; Oxide; Semiconductor

Non-Technical Description: Semiconducting materials are an essential component of all modern electronics. In recent years, a new class of amorphous oxide based semiconducting materials has emerged. These materials are unique in that they can be deposited at room temperature on many solid surfaces while maintaining good electrical properties. The first application of such amorphous metal oxides has been in flat panel displays. The aim of this research project is to explore the fundamental materials science of miniaturized amorphous oxide devices integrated with new types of dielectric oxides. The structures can be made near room temperature and may enable an entirely new approach to design of electronic devices operating at radio frequencies for potential applications ranging from cell phones to satellites. Further, the combination of fundamental materials science and prototype device fabrication has educational impacts in and out of the classroom at Brown University. For instance, the low-cost, low-temperature amorphous oxide technology makes it ideal for a prototype fabrication lab in an undergraduate course on electronic materials and devices.Technical Description: Indium zinc oxide (IZO) in the amorphous form can be deposited at room temperature and achieve a high charge carrier density. This control over charge carrier density during and after deposition, combined with high mobilities, arbitrary substrate compatibility, easy regrowth and low-temperature in-situ oxidation for doping control and dielectric formation, makes these materials a promising platform for integration-ready high-current radio-frequency transistors. In this project, researchers examine the kinetics, electronic properties, and interface structure of metal/IZO formed by an in-situ self-limiting interface reaction. The goal is to achieve localized controllable ultra-high doping and self-limiting dielectric formation. The fundamental materials science knowledge obtained on reacted metal (Ti, Al) oxide/IZO interface structures is applicable to the fabrication of prototype transistors, particularly IZO-based high-current radio-frequency devices. Several critical materials challenges are low-resistance metal/IZO contacts, high and stable carrier density channels, and integration of materials with high dielectric constants. To tackle these challenges, thermodynamic/kinetic modeling of interface stability is combined with analytical techniques ranging from high-resolution transmission electron microscopy, glancing incidence angle x-ray diffraction, to interface electronic characterization techniques.

非技术描述：半导体材料是所有现代电子产品的重要组成部分。近年来，已经出现了一类新的基于氧化物的无定形氧化物半导体材料。这些材料是独一无二的，因为它们可以在室温下在许多固体表面上沉积，同时保持良好的电气性能。这种无定形金属氧化物的首次应用是在平板显示器中。该研究项目的目的是探索与新型的介电氧化物集成的微型无定形氧化物设备的基本材料科学。这些结构可以在室温附近制成，并可以为在无线电频率上运行的电子设备设计一种全新的方法，用于从手机到卫星的潜在应用。此外，基本材料科学和原型设备制造的结合具有在布朗大学的教室内外的教育影响。例如，低成本，低温无定形氧化物技术使其非常适合在电子材料和设备的本科课程中制造原型制造实验室。技术描述：无定形形式的二颗粒氧化锌（IZO）可以在室温下沉积并达到高电荷载体密度。对沉积期间和之后的电荷载体密度的控制，结合高迁移率，任意底物的兼容性，易于重新生长和低温的原位氧化，用于掺杂控制和介电形成，使这些材料成为积分准备高频的高频无线电晶体管的有前途的平台。在这个项目中，研究人员检查了由原位自限制界面反应形成的金属/IZO的动力学，电子特性和界面结构。目的是实现局部可控的超高掺杂和自限制的介电形成。在反应金属（Ti，al）氧化物/IZO界面结构上获得的基本材料科学知识适用于制造原型晶体管，尤其是基于Izo的高电流射频设备。几种关键材料挑战是低电阻金属/IZO接触，高和稳定的载体密度通道以及具有高介电常数的材料的整合。为了应对这些挑战，界面稳定性的热力学/动力学建模与分析技术相结合，范围从高分辨率传输电子显微镜，Glancing Interions X射线衍射到界面电子表征技术。