NSF-BSF: High-mobility amorphous-iodide-based channel materials for p-type thin-film transistors and complementary TFT circuitry

NSF-BSF：用于 p 型薄膜晶体管和互补 TFT 电路的高迁移率非晶碘化物沟道材料

• 批准号: 1904633
• 负责人: David Paine
• 金额: $ 47万
• 依托单位: Brown University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2019
• 资助国家: 美国
• 起止时间: 2019-07-01 至 2024-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1904633&HistoricalAwards=false
• 关键词: NSF; BSF; mobility; amorphous; iodide; NSF; BSF; mobility; amorphous; iodide

Nontechnical description: Over the past decade, displays in electronic devices like laptops have been revolutionized in part by using transparent conducting amorphous oxides due to their processing versatility and higher carrier mobility combined with low-temperature, large-area deposition conditions. A team of investigators from Brown University and Technion (Israel) is investigating a new class of materials, amorphous metal iodides like CuSnI and CuPbI, that would add to the arsenal of transparent conducting materials for use in displays and other transparent circuit technologies. Compared to other amorphous materials, the amorphous metal iodides feature a different physical mechanism: under an applied voltage, the currents are carried by positively charged holes. This offers new low-power dissipation circuit possibilities, as long as the materials properties of these metal iodides, including impurity content, phase, and temperature behavior can be tuned using composition and processing parameters. The research program covers a number of topics, ranging from fundamental experimental materials science of material deposition and characterization to theoretical modeling of phase transformation and impurity incorporation to prototype transistor device fabrication, brings together transparent electronic material and device expertise at Brown University with cutting-edge materials characterization and modeling at the Technion. The research project has an educational impact in and out of the classroom, including graduate student support, Brown-Technion graduate student interaction and exchange visits, as well as outreach to underprivileged middle-school students in the Providence area.Technical description: Two Brown experimentalists with complementary expertise in amorphous electronic materials and device physics, in collaboration with a Technion team experienced in atomic/nano/micro characterization and physical modeling, are focusing on the need for a high-mobility wide-bandgap low-temperature p-type material for thin film transistors (TFTs). The PIs have identified amorphous iodide-based materials as the most promising: they have a wide bandgap (3 eV), high hole mobility (up to 40 cm2/V.s), native vacancy doping, and are compatible with arbitrary substrates. They are also compatible with low-temperature-deposited amorphous n-type zinc oxide-based materials, opening the way for complementary TFT circuitry. The Brown PIs are leveraging their recent demonstration of high-performance indium-zinc-oxide materials by reconfiguring an oxide sputtering tool for in-situ iodide deposition. The Brown team is developing and optimizing the synthesis of a-Cu1-xMxI thin films (M = Sn, Pb, In, and others), studying the doping mechanism via Brouwer analysis, investigating phase stability, and fabricating prototype TFT demonstrator circuits. The experimental work is complemented by the detailed materials characterization and physical modeling performed by the Technion team, that has extensive experience in nanoscale amorphous and crystalline films. The final experimental goal is to develop the deposition of both n- and p-type transparent conducting materials in the same sputter-deposition process at low temperature on arbitrary substrates. The project provides training opportunities to the participating graduate and undergraduate students in cross-cutting electronic materials and devices fields, to the Brown-Technion visitor and student exchanges, as well as to the local underprivileged middle-school students.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

非技术描述：在过去的十年中，由于其处理多功能性和较高的载流子迁移率与低温，大型大区域沉积条件相结合，在过去的十年中，通过使用透明的导电无定形氧化物来部分革命。布朗大学和技术（以色列）的一组研究人员正在研究新的材料类别，例如Cusni和Cupbi等无定形金属碘化物，这将增加透明导电材料的武器库，以便在展示和其他透明电路技术中使用。与其他无定形材料相比，无定形金属碘化物具有不同的物理机制：在施加的电压下，电流通过带正电的孔携带。只要这些金属碘化物的材料特性（包括杂质含量，相和温度行为）可以使用组成和加工参数调整，这提供了新的低功率耗散电路的可能性。该研究计划涵盖了许多主题，从基本实验材料科学的材料沉积和表征科学到相变和杂质纳入的理论建模，再到原型晶体管设备的制造，将透明的电子材料和透明的电子材料和设备专业知识融合在一起。该研究项目在教室内外具有教育影响，包括研究生的支持，棕色技术研究生的互动和交流访问和交流访问，以及向普罗维登斯地区的贫困中学学生推广。技术描述：两位棕色的实验者，具有与米布尔的物理/尼斯（Intoic ne）的互补专业知识，包括米布尔（Intoic Andoic）的互补专业知识，与米克斯（Intoic）的特色型/米布尔（NIT）相关，包括技术和nine nisos intos intom nen nen in a nist and nen in a techicion intan in a nist and nen in a techion in n and nen in n NET，专注于对薄膜晶体管（TFTS）的高弹性宽型宽与低温P型材料的需求。 PI已将无定形碘化物的材料确定为最有前途的材料：它们具有宽带的带隙（3 eV），高孔迁移率（高达40 cm2/v.s），天然空位掺杂，并且与任意底物兼容。它们还与低温降低的无定形N型氧化锌基材料兼容，这为互补的TFT电路开辟了道路。棕色PI通过重新配置氧化物溅射工具以用于原位碘化物沉积来利用他们最近证明高性能二锌氧化物的材料。 Brown团队正在开发和优化A-Cu1-XMXI薄膜的合成（M = Sn，Pb，IN等），通过Brouwer分析研究掺杂机制，研究相位稳定性和制造原型TFT tft Experivator电路。实验性工作与技术团队进行的详细材料表征和物理建模相辅相成，技术团队在无定形和结晶膜中具有丰富的经验。最终的实验目标是在低温下，在相同的溅射沉积过程中开发N-和P型透明导电材料的沉积。该项目为参与的毕业生和本科生提供了跨裁切电子材料和设备领域的培训机会，向棕色技术访问者和学生交流以及当地当地贫困的中学学生的培训机会。该奖项反映了NSF的法定任务，并通过使用基础的智力效果和宽阔的范围来评估NSF的法定任务，并具有值得评估的支持。