NSF: Workshop on Compound Semiconductor Materials & Devices (WOCSEMMAD). Date:February 16-19, 2014 at The Menger Hotel, San Antonio, TX.

NSF：化合物半导体材料研讨会

• 批准号: 1408329
• 负责人: William Doolittle
• 金额: $ 1.53万
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-02-15 至 2014-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1408329&HistoricalAwards=false
• 关键词: NSF; Workshop; Compound; Semiconductor; Materials

The 2014 Workshop on Compound Semiconductor Materials & Devices (WOCSEMMAD) will address research areas in III-V compound semiconductor field. Growth and material properties of 2D layered semiconductors, optoelectronic and electronic device applications of 2D semiconductor materials and their heterostructures will be a major area on which the Workshop will focus. It is one of the few workshop format meetings where the latest results can be debated and discussed in a relatively open format. WOCSEMMAD has played a key role in identifying new directions for research. The workshop will be held February 16-19, 2014 at the Menger Hotel, San Antonio, TX and the project will support student participation. WOCSEMMAD's broader impact will be on the design and development of novel new devices and materials. Along with these new materials and devices, new industries and jobs will be created with lasting impact on science and economy.

2014年化合物半导体材料与器件研讨会（WOCSEMMAD）将讨论III-V族化合物半导体领域的研究领域。二维层状半导体的生长和材料特性、二维半导体材料及其异质结构的光电和电子器件应用将是研讨会重点关注的领域。这是为数不多的研讨会形式的会议之一，可以以相对开放的形式对最新成果进行辩论和讨论。 WOCSEMMAD 在确定新的研究方向方面发挥了关键作用。该研讨会将于 2014 年 2 月 16 日至 19 日在德克萨斯州圣安东尼奥市门格尔酒店举行，该项目将支持学生的参与。 WOCSEMMAD 的更广泛影响将涉及新型器件和材料的设计和开发。随着这些新材料和设备的出现，新的产业和就业机会将被创造出来，对科学和经济产生持久的影响。