Electrical Resistance of a Point Defect

点缺陷的电阻

• 批准号: 1104629
• 负责人: Philip Collins
• 金额: $ 33.5万
• 依托单位: University of California-Irvine
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-09-15 至 2014-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1104629&HistoricalAwards=false
• 关键词: Electrical; Resistance; Point; Defect

****Technical Abstract****The electronic scattering, localization, and fluctuation associated with a point defect ultimately limit what is practically achievable in electronics. This NSF project uses new advances in materials and techniques to systematically measure the transport phenomena associated with single point defects in one-dimensional, carbon nanotube conductors. The one-dimensional limit dramatically amplifies the importance of single defects, to the extent that a single bond or atom modification can substantially affect two- or three-terminal device characteristics. This project will perform a comparative study of different types of defects, produced through deterministic chemical modification, in order to identify reproducible electronic features that can be associated with specific chemical terminations. Variable temperature conductance spectroscopy, scanning probe techniques, and noise spectroscopy will all be used to characterize devices before and after the incorporation of single point defects. The project will support the education of a Ph.D. student and also provide summer research opportunities for undergraduates and talented high school students. Because the field of research lies at the crossroads between traditional physics, chemistry, and electrical engineering, these research opportunities provide outstanding starting points for careers in science and technology.****Non-Technical Abstract****The copper wires that conduct most electricity are not very sensitive to a missing or misplaced atom. But imagine what happens when these wires shrink to nanometer scales. As the wire diameter approaches a few atoms, one missing atom could have enormous effects. New advances in materials and scientific tools allow us to actually make and study wires at this scale, along with more complicated electronic devices like transistors. For practical reasons, future electronics are more likely to use carbon wires than copper ones, so this project uses hollow carbon "nanotubes," wires having a cross section of only ten to twenty atoms. By fashioning these wires into transistors and then modifying carbon bonds one by one, the project will map out and understand the electronic consequences of disorder in atomic scale devices. This work is a "bottom-up" approach to understanding practical electronics at the smallest scales, and it will inform and enable the success of future electronics as traditional, "top-down" manufacturing shrinks to ever smaller scales. The project will support the education of a Ph.D. student and also provide summer research opportunities for undergraduates and talented high school students. Because the field of research lies at the crossroads between traditional physics, chemistry, and electrical engineering, these research opportunities provide outstanding starting points for careers in science and technology.

****技术摘要****与点缺陷相关的电子散射，定位和波动最终限制了电子产品实际上可实现的内容。 该NSF项目使用材料和技术方面的新进步来系统地测量与一维碳纳米管导体中单点缺陷相关的传输现象。 一维极限显着放大了单个缺陷的重要性，以至于单个键或原子修改可能会显着影响两端或三端设备特征。 该项目将对通过确定性化学修饰产生的不同类型的缺陷进行比较研究，以识别可再现的电子特征，这些电子特征可以与特定的化学终止。 可变的温度电导光谱，扫描探针技术和噪声光谱均应用于表征单点缺陷之前和之后的设备。 该项目将支持博士学位的教育。学生，还为大学生​​和才华横溢的高中生提供夏季的研究机会。 由于研究领域在于传统物理，化学和电气工程之间的十字路口，因此这些研究机会为科学和技术领域的职业提供了出色的起点。 但是，想象一下这些电线收缩到纳米尺度时会发生什么。 当电线直径接近几个原子时，一个缺失的原子可能会产生巨大影响。 材料和科学工具方面的新进展使我们能够在此规模上实际制作和研究电线，以及更复杂的电子设备（如晶体管）。 出于实际原因，未来电子产品比铜线更可能使用碳电线，因此该项目使用空心碳“纳米管”，横截面仅为十至二十个原子。 通过将这些电线塑造成晶体管，然后一一修改碳键，该项目将绘制出来并了解原子尺度设备中疾病的电子后果。 这项工作是一种“自下而上”的方法，可以理解最小的尺度上的实用电子产品，它将为未来电子产品作为传统的“自上而下”的制造缩小到较小的尺度的成功提供信息。 该项目将支持博士学位的教育。学生，还为大学生​​和才华横溢的高中生提供夏季的研究机会。 由于研究领域在于传统物理，化学和电气工程之间的十字路口，因此这些研究机会为科学和技术职业提供了出色的起点。