Electronic Fluctuation and Localization at Point Defects

点缺陷处的电子波动和定位

• 批准号: 0801271
• 负责人: Philip Collins
• 金额: --
• 依托单位: University of California-Irvine
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2008
• 资助国家: 美国
• 起止时间: 2008-05-01 至 2011-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0801271&HistoricalAwards=false
• 关键词: Electronic; Fluctuation; Localization; Point; Defects; Electronic; Fluctuation; Localization; Point; Defects

Technical:This single investigator research program systematically investigates transport phenomena associated with single point defects. The electronic scattering, localization, and fluctuation associated with a point defect ultimately limit what is practically achievable in electronics, and industry's ability to design and build electronic circuits at ever smaller scales is limited by control over these sites. While such topics have been extensively treated theoretically, few experimental platforms are available for making direct measurements. In this project, the experimental platform consists of one-dimensional conduction through single-walled carbon nanotubes. In this one-dimensional limit, the alteration of single bonds is sufficient to dramatically alter electronic behavior, providing a window into the transport regime where atomic-scale effects become measurable, distinguishable, and reproducible. The measurement of nanotube circuits both before and after defect creation very directly identifies the interplay between point defects and electronic effects, in order to map out reproducible electronic features associated with different chemical terminations. By using conductance spectroscopy, local scanning probe techniques, noise spectroscopy, optical spectroscopy, and in situ characterization during annealing, this project aims to complete a controlled and systematic study relevant to nanoscale physics and the semiconductor industry. Furthermore, all of the work will be completed by graduate and undergraduate students in a training environment designed to expose junior researchers to problems and techniques relevant to future careers in science.Non-Technical:Modern transistors, memory elements, and all of the wiring that connects them continue to shrink from one generation of products to the next. In extreme cases, the films of material that make up these circuit elements are already only a few atoms thick. The semiconductor industry anticipates that, in the near future, more and more devices will cross into this limit where success or failure can depend on the accidental presence or absence of individual atom. In order to forecast what kinds of effects science and industry will observe in this limit, this project fabricates and tests electronic circuits that intentionally contain single atomic defects. The experimental platform, which uses carbon nanotube conductors only a few atoms wide, directly accesses the limit where atomic scale effects can become measurable, distinguishable, and reproducible. Undergraduate and graduate students are trained to test nanotube circuits before and after the incorporation of single atomic defects, and to identify the electronic changes that result. This degree of control allows the electronic consequences of atomic defects to be systematically investigated and, through further chemical tailoring, corrected for in practical devices. Combined with a unique educational program in Materials Physics, this project provides junior researchers with both practical and theoretical understanding of looming issues in next generation electronic devices, and the relevant techniques for solving them.

技术：该研究者研究计划系统地研究了与单点缺陷相关的运输现象。 与点缺陷相关的电子散射，本地化和波动最终限制了电子设备实际上可以实现的内容，而行业在较小的尺度上设计和构建电子电路的能力受到对这些站点的控制的限制。 尽管从理论上对此类主题进行了广泛的处理，但很少有实验平台可用于进行直接测量。 在这个项目中，实验平台由单壁碳纳米管的一维传导组成。 在这个一维限制中，单键的改变足以显着改变电子行为，从而为原子尺度效应变得可衡量，可区分和可重现的传输方式提供了一个窗口。 纳米管产生前后的纳米管电路的测量非常直接地识别点缺陷和电子效应之间的相互作用，以绘制出与不同化学终端相关的可重复的电子特征。 通过使用电导光谱，局部扫描探针技术，噪声光谱，光谱和在退火过程中的原位表征，该项目旨在完成与纳米级物理学和半导体工业相关的受控和系统研究。 此外，所有工作将由研究生和本科生在培训环境中完成，旨在使初级研究人员了解与科学领域未来职业相关的问题和技术。Non-Technical：现代晶体管，记忆元素以及所有连接它们的接线。 在极端情况下，构成这些电路元件的材料膜已经只有几个原子厚。 半导体行业预计，在不久的将来，越来越多的设备将跨越该限制，在这种极限上，成功或失败可能取决于意外存在或不存在个人原子。 为了预测科学和行业在此限制中会观察到哪些效果，该项目制造并测试了有意包含单个原子缺陷的电子电路。 使用碳纳米管导体仅几个原子宽的实验平台直接访问原子量表效应可以变为可测量，可区分和可重现的极限。 在掺入单个原子缺陷之前和之后，对本科生和研究生进行了训练，可以测试纳米管电路，并确定结果的电子变化。 这种控制程度允许系统地研究原子缺陷的电子后果，并通过进一步的化学裁缝在实际设备中校正。 结合材料物理学的独特教育计划，该项目为初级研究人员提供了对下一代电子设备中迫在眉睫问题的实用和理论理解，以及解决这些问题的相关技术。