GOALI: Growth of GaSb-Related Materials and Devices by Metalorganic Chemical Vapor Deposition for Advanced Optical Fiber Communication Applications

GOALI：通过金属有机化学气相沉积生长 GaSb 相关材料和器件，用于先进光纤通信应用

• 批准号: 0439616
• 负责人: Russell Dupuis
• 金额: --
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-09-01 至 2007-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0439616&HistoricalAwards=false
• 关键词: GOALI; Growth; GaSb; Related; Materials

Long-wavelength lasers emitting at ?= 1.33 or 1.55 m are one of the most important and widely used optoelectronic devices for optical fiber communication systems in the present modern information technology era. For optical-fiber communications, the lnGaAsP quaternary III-V semiconductor material system, which is lattice-matched to InP, covers the wavelength range corresponding to low dispersion or low attenuation in optical fibers. Therefore, lasers for optical communication application with low dispersion or low attenuation have been developed and commercialized using an InGaAsP active layer grown on InP substrates. However, InP-based lasers have generally inferior characteristic performance compared to GaAs-based lasers. Especially for vertical-cavity surface-emitting lasers (VCSELs), lnP -based lasers have been problematic due to the lack of good lattice-matched distributed Bragg reflector (DBR) material combinations, which should have high refractive index contrast, low electrical resistance, and low thermal resistance. Compared to lnP-based VCSELs, GaAs-based VCSELs with AlAs/GaAs DBR mirrors have better characteristics. However, the system performance characteristics, such as the transmission capacity, are limited by the bandwidth of compatible multimode fibers, since they have a short-wavelength spectral range (?~O.85 m).To obtain high-performance long-wavelength lasers, the ideal practical combination should be that of an ~active layer" emitting in the long-wavelength range compatible with the well-established GaAs-based laser technologies. The GaAs system offers several important advantages over the alternate InP-based system, including larger area wafer processing, better thermal properties higher doping concentrations, an oxidation-compatible material system, and high-performance DBR materials. Several possible approaches have been proposed and investigated. One of the most promising is explored here.The study of InAlGaAsSb epitaxial growth using MOCVD is a research topic that is of increasing interest throughout the world. The realization of high-quality epitaxial layers and heterojunctions are important elements in the development of advanced semiconductor devices, in particular, VCSELS. The research proposed here will result in the practical realization of X=1.33pm VCSELs as well as for the study of the fundamental properties of Sb-based heterojunctions and in the study of Ill-Sb quantum dots. The work of the primary topic of the study of Sb growth and fundamental properties couples directly to that of a second research topic on devices, specifically, VCSELs-an area that we are already exploring with collaborators at Agilent Technologies. This research will provide new fundamental insight into the physics of two-dimensionally confined systems in Ill-Sb materials. These topics have a strong potential for broad impact in optoelectronics and also in electronics, e.g.. high-speed electronics could be developed.

发射波长为1.33或1.55 m的长波长激光器是当今现代信息技术时代光纤通信系统中最重要且应用最广泛的光电器件之一。对于光纤通信，InGaAsP 四元 III-V 族半导体材料系统与 InP 晶格匹配，覆盖了光纤中低色散或低衰减对应的波长范围。因此，使用在InP衬底上生长的InGaAsP有源层已经开发出低色散或低衰减的用于光通信应用的激光器并实现商业化。然而，与 GaAs 基激光器相比，InP 基激光器的特性性能普遍较差。特别是对于垂直腔表面发射激光器 (VCSEL)，由于缺乏良好的晶格匹配分布式布拉格反射器 (DBR) 材料组合，InP 基激光器一直存在问题，而这种材料组合应具有高折射率对比度、低电阻、和低热阻。与基于 lnP 的 VCSEL 相比，带有 AlAs/GaAs DBR 镜的 GaAs 基 VCSEL 具有更好的特性。然而，由于多模光纤的光谱范围较短(?~O.85 m)，系统的传输容量等性能特征受到兼容多模光纤带宽的限制。要获得高性能的长波长激光器，理想的实际组合应该是在长波长范围内发射与成熟的 GaAs 基激光技术兼容的“有源层”。与替代的 InP 基系统相比，GaAs 系统具有几个重要优势，包括更大的面积晶圆加工，热性能更好更高的掺杂浓度、氧化相容材料系统和高性能 DBR 材料已被提出并进行了研究。使用 MOCVD 进行 InAlGaAsSb 外延生长的研究是一个研究课题。高质量外延层和异质结的实现是先进半导体器件（尤其是 VCSELS）开发的重要因素。这里提出的研究将导致X=1.33pm VCSEL的实际实现，以及Sb基异质结基本特性的研究和III-Sb量子点的研究。 Sb 生长和基本特性研究的主要主题的工作直接与器件（特别是 VCSEL）的第二个研究主题的工作相结合，这是我们已经与安捷伦科技公司的合作者一起探索的领域。这项研究将为 III-Sb 材料中二维受限系统的物理学提供新的基本见解。这些主题在光电子学和电子学领域具有广泛影响的巨大潜力，例如可以开发高速电子学。