International Symposium on the Growth of III-Nitrides (ISGN: Held in Atlanta, GA May 18-22, 2014

III 族氮化物生长国际研讨会（ISGN：2014 年 5 月 18-22 日在佐治亚州亚特兰大举行

• 批准号: 1439509
• 负责人: Russell Dupuis
• 金额: $ 0.5万
• 依托单位: Materials Research Society
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2014
• 资助国家: 美国
• 起止时间: 2014-08-01 至 2015-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1439509&HistoricalAwards=false
• 关键词: International; Symposium; Growth; III; Nitrides

The International Symposium on the Growth of III-Nitrides (ISGN) will be held May 18-22, 2014 at the Westin Hotel Peachtree Plaza, Atlanta, Georgia. The symposium will foster advances in the leading research on various types of III-Nitride material growth and device technology by gathering a diverse group of experts, researchers and students. The program provides the opportunity for scientific exchanges and discussions on exciting breakthroughs in the terahertz field and the understanding the underlying physical mechanisms.. Topics to be addressed include III-N Bulk growth of AlN, GaN, InN, III-N nanostructures, defect control and surface effects, III-N devices such as Filed-Effect Transistors and Light Emitting Diodes. The Symposium will promote interactions between leading researchers in material growth and device technologies and will focus on the technical challenges of these materials and their applications. The highlights of the symposium will be accessible worldwide through and Abstracts book..

III 族氮化物生长国际研讨会 (ISGN) 将于 2014 年 5 月 18 日至 22 日在佐治亚州亚特兰大桃树广场威斯汀酒店举行。该研讨会将通过聚集不同的专家、研究人员和学生群体，促进各类 III 族氮化物材料生长和器件技术的领先研究取得进展。该计划提供了就太赫兹领域令人兴奋的突破和理解潜在物理机制进行科学交流和讨论的机会。要讨论的主题包括 AlN、GaN、InN、III-N 纳米结构的 III-N 体生长、缺陷控制和表面效应、III-N 器件，例如场效应晶体管和发光二极管。研讨会将促进材料生长和器件技术领域领先研究人员之间的互动，并将重点关注这些材料及其应用的技术挑战。研讨会的亮点将通过摘要书在全世界范围内传播。