Growth and Characterization of Wide-Bandgap Self-Assembled Quantum Dots for Optoelectronic Devices

用于光电器件的宽带隙自组装量子点的生长和表征

• 批准号: 0438111
• 负责人: Russell Dupuis
• 金额: --
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-09-01 至 2005-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0438111&HistoricalAwards=false
• 关键词: Growth; Characterization; Wide; Bandgap; Self

This FRG project is a collaborative effort between researchers at U. TX, Austin, Harvard U., and U. VA. The project addresses materials science based approaches to achieving high-performance laser diodes in the high-energy visible region: (1) growth and characterization of III-P-based wide-bandgap self-assembled quantum dots(SAQD) composed of direct-bandgap ternary alloys, e.g., InxGa1-xP on GaAs substrates, and (2) growth of InxAl1-xP ( x = 0.6 to ~1.0) quantum dots on GaP substrates. These SAQD materials and lasers will be studied to generate the basic knowledge required to optimize such structures for optoelectronic applications such as light sources emitting in the green and yellow spectral regions for full-color laser displays, sources for holographic memory storage, and high-speed light sources for low-cost plastic-fiber-based optical communications systems. The research strives for fundamental insight into the physics of two-dimensionally confined systems in III-V materials. The growth and properties of III-phosphide quantum dots will be explored and the control of strain will be employed to develop an understanding of the growth of uniform QD arrays. %%% The project addresses basic research issues in a topical area of materials science with high technological relevance. Experimental tools are now available to allow atomic level observation of elementary surface processes which when better understood allow advances in fundamental science and technology. The results of this work may allow a new level of reliable control of materials growth, allowing semiconductor devices with reproducible properties to be attained in a variety of academic and commercial settings. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. The project involves the collaborative work of students and faculty in Electrical and Computer Engineering, Physics, and Materials.***

该 FRG 项目是德克萨斯大学、奥斯汀分校、哈佛大学和弗吉尼亚大学的研究人员之间的合作成果。该项目致力于基于材料科学的方法来实现高能可见光区域的高性能激光二极管：（1）由直接带隙组成的基于III-P的宽带隙自组装量子点（SAQD）的生长和表征三元合金，例如 GaAs 衬底上的 InxGa1-xP，以及 (2) 在 GaP 衬底上生长 InxAl1-xP（x = 0.6 至 ~1.0）量子点。将研究这些 SAQD 材料和激光器，以产生优化光电应用结构所需的基础知识，例如全彩激光显示器的绿色和黄色光谱区域发射的光源、全息存储器存储源和高速用于低成本塑料光纤光通信系统的光源。该研究致力于对 III-V 族材料中二维受限系统的物理原理有基本的了解。将探索 III 族磷化物量子点的生长和特性，并利用应变控制来加深对均匀 QD 阵列生长的理解。 %%% 该项目解决了具有高度技术相关性的材料科学主题领域的基础研究问题。现在可以使用实验工具来对基本表面过程进行原子水平观察，当更好地理解这些过程时，可以促进基础科学和技术的进步。这项工作的结果可能会将材料生长的可靠控制提升到一个新的水平，从而使半导体器件能够在各种学术和商业环境中获得具有可重复性能的半导体器件。该计划的一个重要特点是通过在基础和技术重要领域对学生进行培训，将研究和教育结合起来。该项目涉及电气和计算机工程、物理和材料专业的学生和教师的协作工作。***