GOALI: RF Performance of Si-Based RITD for Mixed-Signal Applications

目标：用于混合信号应用的硅基 RITD 的射频性能

• 批准号: 0323657
• 负责人: Paul Berger
• 金额: $ 27万
• 依托单位: Ohio State University Research Foundation -DO NOT USE
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-08-15 至 2010-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0323657&HistoricalAwards=false
• 关键词: GOALI; RF; Performance; Si; Based

0323657BergerThe drive to develop advanced semiconductor devices and circuits is fueled bythe wealth of electronic and optical properties of heterostructures made possible by band structure engineering. Tunnel diodes (TD) can be integrated with transistors to create novel quantum nonlinear functional devices and circuits due to the unique property of a tunnel diode's negative differential resistance (NDR). Such integrated circuits have demonstrated enhanced performances in circuit speed, reduce component count and lower power consumption. Previous circuit work incorporating TDs, at places like Motorola Laboratories, has been limited to III-V compound semiconductors only. However, until recently, it was not practical to translate this to the low-cost and high production volume Si world. But recent developments in Si-based TD technology by the PI and other researchers are challenging this roadblock. One aim of this proposal is to seek ways to integrate Si-based resonant interband tunnel diodes (RITD) with Si/SiGe transistors to meet the challenges in the wireless communications by transferringthis III-V-based TD circuit technology to Si. The PI seeks to capitalize upon recent DC performance milestones achieved within his laboratory on Si-based RITDs, namely peak-to-valley current ratio (PVCR) up to 3.8 at room temperature or peak current densities Jp exceeding 150 kA/cm 2 .This project aims to boost Si wireless capabilities that could eventually lead to anentire radio on a single Si chip or other interesting fusions of digital and analog circuits. Further, tunnel diodes have been shown to be very radiation hard and were used extensively in some of the first communication satellites in the 1960's, thus lending their introduction into military and non-terrestrial applications as well. Partnering with Motorola Laboratories in the form of a Grant Opportunities of Academia in Liaison with Industry (GOALI) is testimony to the level of interest and curiosity of industry to explore this technological pathway further, before embracing it. Motorola is willing to share their circuit and system experience as well as apply their in-house analog modeling of these nonlinear Si/SiGe TDs.This project will provide an environment where students can be trained in a broaderperspective of the research process, from device physics, material and device processing, to device and circuit testing and modeling. Collaborative efforts required in this project will allow graduate and undergraduate students not only to have natural exchange and supervision with PIs, but also to have strong interactions with scientists in government and industry research laboratories, which will facilitate their acquisition of knowledge and provide an initial research experience that promotes the notion of teaming in their future careers. At Ohio State (Berger), undergraduate research is expected to play a large component in the proposed research. Discussions have already commenced with the EE Honors Program representative and the PI to ramp up towards a collective REU Site submission in Fall 2003. In lieu of this, the PI will submit requests for REU supplements as well as the REU Site request. The PI has a long and established history of using undergraduate researchers through REU supplements. Recruitment of underrepresented peoples has been and will be a facet in the PIs research projects.The technical merits of this project derive from its impact on (i) increase circuit speeddue to shortened path lengths and increased functionality, (ii) reduce component count (more computational power per unit area), (iii) lower power consumption (fewer components per logic function), (iv) compact the layout using 3-D integration of tunnel diodes above/below transistors, and (v) extend RF wireless technology.

0323657Berger 能带结构工程使异质结构具有丰富的电子和光学特性，推动了先进半导体器件和电路的开发。由于隧道二极管负微分电阻 (NDR) 的独特特性，隧道二极管 (TD) 可以与晶体管集成，创建新型量子非线性功能器件和电路。此类集成电路在电路速度、减少元件数量和降低功耗方面表现出增强的性能。以前在摩托罗拉实验室等地方采用 TD 的电路工作仅限于 III-V 族化合物半导体。然而，直到最近，将其转化为低成本、高产量的硅领域还不切实际。 但 PI 和其他研究人员最近在硅基 TD 技术上的进展正在挑战这一障碍。该提案的目标之一是寻求将硅基谐振带间隧道二极管 (RITD) 与 Si/SiGe 晶体管集成的方法，通过将这种基于 III-V 族的 TD 电路技术转移到硅上来应对无线通信中的挑战。 PI 寻求利用其实验室最近在硅基 RITD 上实现的 DC 性能里程碑，即室温下峰谷电流比 (PVCR) 高达 3.8 或峰值电流密度 Jp 超过 150 kA/cm 2 。该项目旨在增强硅无线功能，最终可能在单个硅芯片上实现整个无线电或其他有趣的数字和模拟电路融合。此外，隧道二极管已被证明具有很强的抗辐射能力，并在 20 世纪 60 年代的一些第一批通信卫星中得到广泛使用，从而也将其引入军事和非地面应用。以学术界与工业界联络资助机会 (GOALI) 的形式与摩托罗拉实验室合作，证明了工业界在接受这一技术途径之前进一步探索这一技术途径的兴趣和好奇心。摩托罗拉愿意分享他们的电路和系统经验，并应用他们对这些非线性 Si/SiGe TD 的内部模拟建模。该项目将提供一个环境，让学生能够从设备物理的更广泛的研究过程角度接受培训、材料和器件加工，到器件和电路测试和建模。该项目所需的协作努力将使研究生和本科生不仅能够与PI进行自然的交流和监督，而且能够与政府和行业研究实验室的科学家进行强有力的互动，这将有助于他们获取知识并提供初步研究在未来的职业生涯中促进团队合作理念的经验。在俄亥俄州立大学（伯杰），本科生研究预计将在拟议的研究中发挥重要作用。已经开始与 EE 荣誉计划代表和 PI 进行讨论，以期在 2003 年秋季集体提交 REU 站点。取而代之的是，PI 将提交 REU 补充请求以及 REU 站点请求。 PI 在通过 REU 补充品聘用本科生研究人员方面有着悠久的历史。招募代表性不足的人群已经并将成为 PI 研究项目的一个方面。该项目的技术优点源于其对 (i) 由于缩短的路径长度和增加的功能而提高电路速度，(ii) 减少元件数量（更多(iii) 降低功耗（每个逻辑功能的组件更少），(iv) 使用晶体管上方/下方隧道二极管的 3D 集成来紧凑布局，以及 (v) 扩展 RF 无线技术。