RUI: Ultrafast Terahertz Spectroscopy of Carrier Dynamics in Semiconductors

RUI：半导体载流子动力学的超快太赫兹光谱

• 批准号: 0317276
• 负责人: James Heyman
• 金额: $ 19.5万
• 依托单位: Macalester College
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2003
• 资助国家: 美国
• 起止时间: 2003-06-01 至 2006-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0317276&HistoricalAwards=false
• 关键词: RUI; Ultrafast; Terahertz; Spectroscopy; Carrier

This individual investigator award will support research in ultrafast optics and semiconductor physics. As switching rates in electronic devices are pushed to ever higher frequencies, it becomes increasingly important to understand carrier transport phenomena in semiconductors on picosecond and femtosecond time-scales. Using ultrafast terahertz spectroscopy it is possible to impulsively excite a semiconductor with a femtosecond optical pulse or single-cycle electromagnetic pulse, and record the resulting motion of charge in time. This project, at a predominately undergraduate institution, will use these techniques to investigate charge transport and hot-carrier phenomena in semiconductors and semiconductor heterostructures on time-scales that will be relevant to future devices. One focus of research will be to investigate hot carrier phenomena in semiconductors using ultrafast terahertz spectroscopy in a magnetic field. The second project will use ultrafast terahertz spectroscopy to study coherent intersubband phenomena in semiconductor quantum wells. The undergraduate researchers involved with this project will obtain training in state of the art techniques.This grant will support research in ultrafast optics and semiconductor physics at a predominately undergraduate institution. As computers and other electronic devices become ever faster, it becomes increasingly important to understand the flow of electrical current in semiconductors and other electronic materials on time-scales of a trillionth of a second or less. This project will use femtosecond light pulses to excite bursts of current in semiconductors, and will record the evolution of the current pulses in time by recording the electromagnetic waves they emit. The project goal is to study the scattering of electrons and coherent phenomena in semiconductor devices. This will be relevant to the development of electronic technology. The undergraduate researchers involved with this project will obtain training in state of the art techniques.

该个人研究者奖将支持超快光学和半导体物理学的研究。 随着电子设备中的开关速率被推到较高的频率，了解Picsecond和飞秒时间尺度上半导体中的载流子传输现象变得越来越重要。 使用Ultrafast Terahertz光谱法可以用飞秒光脉冲或单周期电磁脉冲冲动激发半导体，并记录所得的电荷运动。 该项目在一个主要的本科机构中，将使用这些技术来研究与未来设备有关的时间尺度上半导体和半导体异质结构中的电荷运输和热载体现象。 研究的一个重点是使用磁场中的超快Terahertz光谱研究半导体中的热载体现象。第二个项目将使用超快的terahertz光谱研究在半导体量子井中研究相干的间隔现象。 参与该项目的本科研究人员将获得最新技术的培训。该赠款将在主要的本科机构中支持超快光学和半导体物理学的研究。 随着计算机和其他电子设备变得越来越快，了解半导体和其他电子材料中电流的流动变得越来越重要。 该项目将使用飞秒的光脉冲来激发半导体中电流的突发，并通过记录它们发出的电磁波来记录电流脉冲的演变。 项目目标是研究半导体设备中电子和相干现象的散射。 这将与电子技术的开发有关。 参与该项目的本科研究人员将获得最新技术的培训。