U.S.- Germany Cooperative Research: Electronic and Magnetic Excitations in II-VI Semiconductors and their Alloys

美德合作研究：II-VI 半导体及其合金中的电子和磁激励

• 批准号: 9981626
• 负责人: Anant Ramdas
• 金额: $ 0.6万
• 依托单位: Purdue Research Foundation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-03-01 至 2003-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9981626&HistoricalAwards=false
• 关键词: U.S.; Germany; Cooperative; Research; Electronic

9981626RamdasThis award supports Dr. Anant K. Ramdas and a graduate student from Purdue University in a collaboration with Harald Pascher of the Department of Experimental Physics at the University of Bayreuth, Germany. The collaboration studies the collective and localized excitations in the ternary and quaternary alloys of II-VI diluted magnetic semiconductors. Experimental investigations involve spontaneous Raman scattering and coherent Stokes-Raman studies supplemented with modulation techniques, photoluminescence, and Fourier transform spectroscopy. Magnetic interactions in the diluted magnetic semiconductors, controlled by the concentration of the magnetic ions or by the dimensionality in sub-micron quantum well structures manifest themselves in a spectacular manner in numerous phenomena, such as the Faraday and Voigt effect, Raman-electron paramagnetic resonance, and Raman-anti-ferromagnetic resonance. This award adds a third year of research to a two-year award that has already produced significant results, several publications, and excellent experience for several Purdue graduate students.

9981626Ramdas 该奖项支持普渡大学的 Anant K. Ramdas 博士和一名研究生与德国拜罗伊特大学实验物理系的 Harald Pascher 合作。 该合作研究了 II-VI 稀磁半导体的三元和四元合金中的集体和局部激发。 实验研究涉及自发拉曼散射和相干斯托克斯拉曼研究，并辅以调制技术、光致发光和傅里叶变换光谱。 稀释磁性半导体中的磁相互作用由磁性离子的浓度或亚微米量子阱结构的维数控制，在许多现象中以壮观的方式表现出来，例如法拉第和沃伊特效应、拉曼电子顺磁共振，和拉曼反铁磁共振。 该奖项在两年的研究基础上又增加了第三年的研究，该奖项已经取得了显着的成果、多篇出版物，并为普渡大学的几名研究生提供了出色的经验。