U.S.- Germany Cooperative Research: Electronic and Magnetic Excitations in II-VI Semiconductors and their Alloys

美德合作研究：II-VI 半导体及其合金中的电子和磁激励

• 批准号: 9981626
• 负责人: Anant Ramdas
• 金额: $ 0.6万
• 依托单位: Purdue Research Foundation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2000
• 资助国家: 美国
• 起止时间: 2000-03-01 至 2003-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9981626&HistoricalAwards=false
• 关键词: U.S.; Germany; Cooperative; Research; Electronic

9981626RamdasThis award supports Dr. Anant K. Ramdas and a graduate student from Purdue University in a collaboration with Harald Pascher of the Department of Experimental Physics at the University of Bayreuth, Germany. The collaboration studies the collective and localized excitations in the ternary and quaternary alloys of II-VI diluted magnetic semiconductors. Experimental investigations involve spontaneous Raman scattering and coherent Stokes-Raman studies supplemented with modulation techniques, photoluminescence, and Fourier transform spectroscopy. Magnetic interactions in the diluted magnetic semiconductors, controlled by the concentration of the magnetic ions or by the dimensionality in sub-micron quantum well structures manifest themselves in a spectacular manner in numerous phenomena, such as the Faraday and Voigt effect, Raman-electron paramagnetic resonance, and Raman-anti-ferromagnetic resonance. This award adds a third year of research to a two-year award that has already produced significant results, several publications, and excellent experience for several Purdue graduate students.

9981626RAMDASTHIS奖支持Anant K. Ramdas博士和普渡大学的研究生与德国Bayreuth大学实验物理学系的Harald Pascher合作。 协作研究II-VI稀释的磁性半导体的三元和第四纪合金中的集体和局部激发。 实验研究涉及自发的拉曼散射和一致的Stokes-Raman研究，这些研究补充了调制技术，光致发光和傅立叶变换光谱。 稀释的磁性半导体中的磁相互作用，由磁离子的浓度或亚微米量子量井结构中的维度控制，以多种现象以壮观的方式表现出来，例如法拉第和voigt效应，拉曼 - 电子磁性重置，Raman-Electron parmagnetic Resonance，Raman-Ant-Ant-Ant-ant-ant-ant-anti-Ferromagnetic Resonance。 该奖项为为期两年的奖项增加了第三年的研究，该奖项已经为几位普渡大学的研究生提供了重要的结果，几个出版物和出色的经验。