Materials and Thin Films for Spintronic Devices

用于自旋电子器件的材料和薄膜

• 批准号: 0129853
• 负责人: Anant Ramdas
• 金额: $ 7.95万
• 依托单位: Purdue University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-08-01 至 2002-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0129853&HistoricalAwards=false
• 关键词: Materials; Thin; Films; Spintronic; Devices; Materials; Thin; Films; Spintronic; Devices

The project will be devoted to the growth of III-V diluted magnetic semi-conductors (III-V DMSs) ternary compounds in which the anions are re-placed with a member of the 3d-transition group. The motivation and goal ofthe program are to explore and establish the conditions for successful growthof single crystals which will be materials suitable for investigating the ex-traordinary physical phenomena originating in the large magnetic momentsof 3d-transition-ion (3d-TMI) and their role as acceptors. The simultaneouspresence of free holes and the large magnetic moments provide the ingredi-ents for novel phenomena associated with spin-polarized charge carriers. Thegrowth will initially focus on the incorporation of Mn, Co and Fe into GaAs,InP, GaP and InSb by thermal diffusion and melt growth. Spectroscopic(Fourier Transform Infrared, Raman and photoluminescence, modulated re-flectivity/transmission and magneto optic characterization at Purdue andthose based on magnetic, electron-paramagnetic-resonance, and non-linearspectroscopy by international collaborators will provide invaluable feedbackto the crystal grower. Another collaboration will address the production ofultrapure starting material and fabrication of substrates suitable for molec-ular beam epitaxy (MBE). Basic science and device related work will be ini-tiated during this phase. Besides the crystal growth program implementedby the Co-PI, students will participate in the characterization activities andwill acquire a healthy appreciation of growth techniques. This exposure andinvolvement will prepare them for the scientific/technical workforce of the21st century. The aim of the program is to provide a "steady state-" supply of wellcharacterized III-V diluted magnetic semiconductors to our ongoing researchon collective and localized excitations of vibrational, electronic, and magneticcharacter. The access to bulk single crystals as well as material as MBE-grown epilayers and quantum well structures will give the participants theintense excitement of basic research significant in device applications.

该项目将致力于III-V稀释的磁性半导体（IIII-V DMS）三元化合物的生长，其中阴离子与3D型转换组的成员重新定位。该计划的动机和目标是探索并确定单晶成功生长的条件，这些材料适合研究源自3D-Transition-ION（3D-TMI）的大磁矩（3D-TMI）及其作为接受者的前三级物理现象。游离孔和大磁矩的同时呈现为与自旋偏振电荷载体相关的新现象提供了INGREDIES。最初，通过热扩散和熔体生长，将重点关注Mn，CO和Fe融入GAA，INP，GAP和INSB。 基于磁性，电子 - 磁磁性谐振，非线性镜头和国际协作机构的非线性合作构造将在Purdue和Those上进行调制的重新转换/传播和磁表特征，并基于磁性，电子 - 磁磁性 - 非线性光谱和国际协作机构的非线性镜检查将为晶体生长提供无效的启动构造。在此阶段，分子的外观和设备与设备相关的工作将是由Co-Pi进行的。 III-V稀释的磁性半导体，用于我们正在进行的振动，电子和磁性磁具的局部研究和局部激发。 获取散装单晶以及MBE成长的表层和量子井结构的材料将使参与者在设备应用中具有重要的基础研究的兴奋感。