Raman, Brillouin, Infrared and Modulation Spectroscopy of Collective and Localized Excitations in Tetrahedrally Coordinated Semiconductors and Their Heterostructures

四面体配位半导体及其异质结构中集体和局域激发的拉曼光谱、布里渊光谱、红外光谱和调制光谱

• 批准号: 0102699
• 负责人: Anant Ramdas
• 金额: $ 39万
• 依托单位: Purdue Research Foundation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2001
• 资助国家: 美国
• 起止时间: 2001-09-01 至 2004-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0102699&HistoricalAwards=false
• 关键词: Raman; Brillouin; Infrared; Modulation; Spectroscopy

This project is devoted to the investigation of collective and localized excitations in tetrahedrally coordinated semiconductors and their heterostructures by means of a variety of optical techniques. The research will focus on the collective and localized excitations in isotopically controlled semiconductors composed composed of light atoms (diamond, SiC, BN and BP). Attention will be given to electronic states of donor-bound electrons and acceptor-bound holes in isotopically controlled diamond, Si, silicon carbide polytypes, as well as II-VI and III-V compound semiconductors. In addition, localized vibrations and gap modes of isoelectronic and compensated impurities will be explored and delineated in the chalcopyrites genealogically derived from the II-VI and III-V semiconductors. Collective excitations subjected to the constraints of the reduced dimensionality of nanostructures fabricated with molecular beam epitaxy will be investigated. Raman, Brillouin, Infrared , photoluminescence and modulated reflectivity/transmission spectroscopic techniques supplemented by piezo- and magneto-spectroscopy will be employed to address the above problems. Students will participate in this research. They will receive training in one of the forefront areas of current semiconductors physics and will thereby be prepared to enter the scientific/technical workforce of the 21st Century. This research deals with the application of several experimental optical techniques to problems posed by advanced semiconductor materials. These materials play a great role in current technology but a basic understanding of their behaviors is still lacking. This research will provide information that will be useful for the synthesis and use of ultrahard materials, such as diamond, silicon carbide, boron nitride and others that have found applications as superhard thin film coatings. The behavior of these materials can be changed by the deliberate, controlled introduction of specific impurities or by manipulating their isotopic composition. The changed behaviors hold the promise of improved performance of the materials in applications of high temperature/high power electronic devices. This project offers many opportunities for the participation by students. Participants in the program will be exposed to the excitement and intellectual challenges of an area that is important in contemporary basic science and significant for potential applications. The expertise thus developed will prepare them for a future in academia and government as well as a career in research and development in the high tech optoelectronic industry.

该项目致力于通过各种光学技术研究四面体配位半导体及其异质结构中的集体和局部激发。该研究将重点关注由轻原子（金刚石、SiC、BN 和 BP）组成的同位素控制半导体中的集体和局部激发。将关注同位素控制金刚石、Si、碳化硅多型体以及 II-VI 和 III-V 化合物半导体中施主束缚电子和受主束缚空穴的电子态。此外，还将探索和描述源自 II-VI 和 III-V 半导体的黄铜矿中的等电子和补偿杂质的局部振动和间隙模式。将研究受分子束外延制造的纳米结构降维约束的集体激发。将采用拉曼、布里渊、红外、光致发光和调制反射/透射光谱技术并辅以压电和磁光谱技术来解决上述问题。 学生将参与这项研究。他们将接受当前半导体物理学最前沿领域之一的培训，从而为进入 21 世纪的科学/技术劳动力做好准备。这项研究涉及几种实验光学技术的应用，以解决先进半导体材料带来的问题。这些材料在当前技术中发挥着重要作用，但仍缺乏对其行为的基本了解。这项研究将为超硬材料的合成和使用提供有用的信息，例如金刚石、碳化硅、氮化硼和其他已发现可用作超硬薄膜涂层的材料。 这些材料的行为可以通过有意、受控地引入特定杂质或通过操纵其同位素组成来改变。这些变化的行为有望提高材料在高温/高功率电子设备应用中的性能。该项目为学生提供了很多参与的机会。该计划的参与者将接触到当代基础科学中重要且对潜在应用具有重要意义的领域的兴奋和智力挑战。 由此获得的专业知识将为他们在学术界和政府的未来以及高科技光电行业的研发职业做好准备。