U.S.-Germany Cooperative Research: Electronic & Magnetic Excitations in II-VI Semiconductors and Their Alloys

美德合作研究：电子

• 批准号: 9726210
• 负责人: Anant Ramdas
• 金额: $ 1.1万
• 依托单位: Purdue University
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1998
• 资助国家: 美国
• 起止时间: 1998-03-15 至 2002-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9726210&HistoricalAwards=false
• 关键词: U.S.; Germany; Cooperative; Research; Electronic

This award supports Dr. Anant K. Ramdas and up to three graduate students from Purdue University in a collaboration with Harald Pascher of the Department of Experimental Physics at the University of Bayreuth. The collaboration will study the collective and localized excitations in the ternary and quaternary alloys of II-VI diluted magnetic semiconductors. Experimental investigations will involve spontaneous Raman scattering and coherent Stokes-Raman studies supplemented with modulation techniques, photoluminescence, and Fourier transform spectroscopy. Magnetic interactions in the diluted magnetic semiconductors, controlled by the concentration of the magnetic ions or by the dimensionality in sub-micron quantum well structures manifest themselves in a spectacular manner in numerous phenomena, such as the Faraday and Voigt effect, Raman-electron paramagnetic resonance, and Raman-anti-ferromagnetic resonance.

该奖项支持Anant K. Ramdas博士和普渡大学的最多三名研究生，与Bayreuth大学实验物理系的Harald Pascher合作。 该协作将研究II-VI稀释的磁性半导体的三元和第四纪合金中的集体和局部激发。 实验研究将涉及自发的拉曼散射和相干的Stokes-Raman研究，这些研究补充了调制技术，光致发光和傅立叶变换光谱。 稀释的磁性半导体中的磁相互作用，由磁离子的浓度或亚微米量子量井结构中的维度控制，以多种现象以壮观的方式表现出来，例如Faraday和voigt效应，拉曼 - 电子磁性共振，和拉曼 - 抗铁磁共振共振。