Spin-polarized Electron Tunneling with Ferromagnetic Materials

铁磁材料的自旋极化电子隧道

• 批准号: 9423013
• 负责人: Jagadeesh Moodera
• 金额: $ 25.5万
• 依托单位: Massachusetts Institute of Technology
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-06-01 至 1998-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9423013&HistoricalAwards=false
• 关键词: Spin; polarized; Electron; Tunneling; Ferromagnetic

9423013 Moodera Experimental investigation of the properties of magnetic materials by the surface-sensitive technique of spin-polarized tunneling is the aim of this research program. In particular, electron tunneling between ferromagnetic metals, through ferromagnetic insulators, and exchange effects in ultrathin films, and at the interfaces between ferromagnetic metals and paramagnetic metals will be studied. Planar tunnel junctions will use superconductors as electron-spin detectors at low temperature and voltage. Our recent success in using ferromagnetic metals as electron-spin detectors at room temperature and higher voltages greatly broadens this field of research and suggests technological uses. %%% Improvement of computer magnetic memory systems is currently of high priority. Study of surfaces and interfaces has become increasingly pertinent from the point of present and future technology. This is a proposal for the study of the physics of magnetic effects in thin film surfaces and trilayers using the technique of spin-polarized tunneling. The recently discovered large magnetoresistance effects in ferro-magnetic tunnel junctions at room temperature promise important applications for these effects in READ/WRITE sensors and memory elements. ***

9423013通过自旋式隧穿的表面敏感技术对磁性材料的性质进行了Moodera实验研究，是该研究计划的目的。 特别是，将研究铁磁金属之间的电子隧穿，通过铁磁绝缘子以及超薄膜中的交换效应，以及在铁电磁金属和顺磁金属之间的界面。 平面隧道连接将在低温和电压下使用超导体作为电子旋转探测器。 我们最近在室温下使用铁磁金属作为电子旋转探测器的成功成功大大拓宽了这一研究领域，并提出了技术用途。 计算机磁性内存系统的改进目前是高优先级。 从现在和未来的技术中，对表面和界面的研究变得越来越相关。 这是研究使用自旋极化隧道技术研究薄膜表面和三层型磁效应物理学的建议。 最近发现的在室温下在铁磁性隧道连接处的磁化效果很大，有望在读/写传感器和记忆元素中对这些效果的重要应用。 ***