Dynamics of R.F. Discharges for Materials Etching

R.F. 的动力学

• 批准号: 9217500
• 负责人: Michael Lieberman
• 金额: $ 32.12万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-04-01 至 1996-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9217500&HistoricalAwards=false
• 关键词: Dynamics; R.F.; Discharges; Materials; Etching

Plasma discharges are widely used in the semiconductor industry for etching and deposition processes; moreover, their use has become critical for very large scale integrated circuit (VLSI) production. Inductively coupled plasma sources and other high density plasma sources will play in increasing role in processing as feature sizes shrink. U.S. equipment manufacturers are playing a leading role in developing inductive discharges, with the first commercial product released in summer, 1992. This work is for research on inductive r.f. discharges and their application to thin film materials processing. The program involves (a) the development of self-consistent analytical models and measurements for low pressure, high-density inductively coupled plasma sources; and (b) the development of analytical models and measurements for determining the uniformity properties of inductively driven r.f. source plasmas injected into materials processing reactor chambers. Etching (dry pattern transfer) of surface imaged photoresists using oxygen plasma discharges will be applied to characterize the materials processing capabilities of the inductive source.

等离子放电广泛应用于半导体行业的蚀刻和沉积工艺； 此外，它们的使用对于超大规模集成电路（VLSI）生产变得至关重要。 随着特征尺寸的缩小，电感耦合等离子体源和其他高密度等离子体源将在加工中发挥越来越重要的作用。 美国设备制造商在开发感应放电方面发挥着主导作用，第一个商业产品于 1992 年夏天发布。这项工作是针对感应射频​​的研究。 放电及其在薄膜材料加工中的应用。 该计划涉及 (a) 开发低压、高密度电感耦合等离子体源的自洽分析模型和测量； (b) 开发分析模型和测量，以确定感应驱动射频的均匀性特性。将源等离子体注入材料加工反应室。 使用氧等离子体放电对表面成像光致抗蚀剂进行蚀刻（干式图案转移）将用于表征感应源的材料处理能力。