Dynamics of R.F. Discharges for Materials Etching

R.F. 的动力学

• 批准号: 9217500
• 负责人: Michael Lieberman
• 金额: $ 32.12万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1993
• 资助国家: 美国
• 起止时间: 1993-04-01 至 1996-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9217500&HistoricalAwards=false
• 关键词: Dynamics; R.F.; Discharges; Materials; Etching; Dynamics; R.F.; Discharges; Materials; Etching

Plasma discharges are widely used in the semiconductor industry for etching and deposition processes; moreover, their use has become critical for very large scale integrated circuit (VLSI) production. Inductively coupled plasma sources and other high density plasma sources will play in increasing role in processing as feature sizes shrink. U.S. equipment manufacturers are playing a leading role in developing inductive discharges, with the first commercial product released in summer, 1992. This work is for research on inductive r.f. discharges and their application to thin film materials processing. The program involves (a) the development of self-consistent analytical models and measurements for low pressure, high-density inductively coupled plasma sources; and (b) the development of analytical models and measurements for determining the uniformity properties of inductively driven r.f. source plasmas injected into materials processing reactor chambers. Etching (dry pattern transfer) of surface imaged photoresists using oxygen plasma discharges will be applied to characterize the materials processing capabilities of the inductive source.

等离子体排放广泛用于半导体行业，用于蚀刻和沉积过程。 此外，它们的使用对于非常大规模的集成电路（VLSI）生产至关重要。 电感耦合的等离子体源和其他高密度等离子体源将在处理特征大小缩小的处理中发挥作用。 美国设备制造商在开发感应放电方面发挥了领先作用，并于1992年夏季发行了第一批商业产品。这项工作是针对感应R.F.的研究。 放电及其在薄膜材料加工中的应用。 该程序涉及（a）开发自洽分析模型和低压，高密度，电感耦合等离子体源的测量； （b）开发分析模型和测量结果，用于确定电感驱动的R.F.的均匀性能。将源等离子体注入材料加工反应器室。 使用氧血浆放电的表面成像光孔师的蚀刻（干模式转移）将用于表征电感源的材料加工能力。