Dynamics of R.F. Discharges for Materials Etching

R.F. 的动力学

• 批准号: 9820836
• 负责人: Michael Lieberman
• 金额: $ 22.5万
• 依托单位: University of California-Berkeley
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1999
• 资助国家: 美国
• 起止时间: 1999-06-01 至 2003-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9820836&HistoricalAwards=false
• 关键词: Dynamics; R.F.; Discharges; Materials; Etching; Dynamics; R.F.; Discharges; Materials; Etching

9820836LiebermanChemically reactive plasma discharges are widely used in the semiconductor and fiat panel display indus-tries for etching and deposition processes; moreover, their use has become critical for VLSI circuit and thin film transistor (TFT) production. High density rf inductively coupled plasma sources will play an increasing role in processing as feature sizes shrink and as wafer and TFT substrate sizes increase. This proposal is for continuation of research on such discharges. The program involves (a) experiments and analytical models for a large area plasma source (LAPS) that is inductively excited by an rf traveling wave launched onto an antenna coil embedded within the plasma volume, and (b) theories and experiments to examine equilibrium, hysteresis, and unstable behavior in inductively coupled plasma sources with electronegative gas feedstocks.The LAPS has favorable properties for scaling to large sizes. Plasma in the source is generated in a rectangular box 71.1 cm x 61.0 cm x 20.3 cm containing a substrate holder large enough to study processing of silicon wafers as large as 300 mm in diameter and fiat panel glass substrate sizes as large as 360 mm x 465 mm. A critical issue to be examined in the experiments is whether traveling wave excitation of a coil embedded in the plasma can generate uniform plasmas and materials processing over large areas.The studies of electronegative discharge equilibrium, hysteresis, and instabilities will be performed in a planar inductive discharge (transformer-coupled plasma, or TCP) of the conventional type used for VLSI processing. Feedstock gases for etch applications will be used, including chlorine, oxygen, SF6, and their mixtures with argon.***

9820836 Liebermanchemnation用反应性等离子体排放广泛用于半导体和菲亚特面板展示工业，用于蚀刻和沉积过程；此外，它们的使用对于VLSI电路和薄膜晶体管（TFT）生产至关重要。高密度RF电感耦合的等离子源将在处理中发挥越来越多的作用，因为特征尺寸缩小，并且随着晶圆和TFT底物的增加而增加。该建议是为了继续进行此类排放研究。该程序涉及（a）大面积等离子体源（LAP）的实验和分析模型，该模型是通过嵌入在血浆体积中的天线线圈上的RF行动波来感应激发的，并且（b）具有较高的溶胶质量和非固定质量的平衡性能的理论和实验。扩展到大尺寸。源中的血浆是在矩形盒71.1 cm x 61.0 cm x 20.3 cm中生成的，该木材含有足够大的基板固定器，可以研究直径至300 mm的硅晶片和菲亚特面板玻璃基板尺寸，大小为360 mm x 465 mm。实验中要检查的一个关键问题是，嵌入在血浆中的线圈的行动波激发是否可以在大面积上产生均匀的等离子体和材料处理。对电负性放电平衡，磁滞和不稳定性的研究将在平面上进行分配（用于变形金属耦合等离子等离排化），以实现consission consiment consiment consiment consission-tycp of the in Consindment of the in Consindment of the Insigment of the Insigment of the Insigment of the Insigment。将使用用于蚀刻应用的原料气体，包括氯，氧气，SF6及其与氩气的混合物。***