Boron Nitrogen Isostere-Doped Organometallics for Molecular Electronics

用于分子电子学的硼氮等排掺杂有机金属化合物

• 批准号: DP230100215
• 负责人: Prof Anthony Hill
• 金额: $ 30.24万
• 依托单位: The Australian National University
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Projects
• 财政年份: 2023
• 资助国家: 澳大利亚
• 起止时间: 2023-01-01 至 2025-12-31
• 项目状态: 未结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DP230100215
• 关键词: Boron; Nitrogen; Isostere; Doped; Organometallics

The challenge of connecting two or more metals by a single chain of carbon atoms attracts intense study, thereby mimicking electronic circuitry at the molecular level. BN-Isosteric compounds involve selectively replacing (doping) carbon atoms with the elements boron (B) and nitrogen (N). These unprecedented materials should emulate and likely exceed the properties of all-carbon systems. This project aims to design and synthesise the first molecular BN-isosteric carbon-wire materials including examples based on metal-carbon multiple bonding. Expected outcomes beyond their isolation include high-level interrogation of the structure-function behaviour of their electrical and optical properties relevant to the technologies that will emerge.

通过单碳原子链连接两种或多种金属的挑战吸引了深入的研究，从而在分子水平上模拟电子电路。 BN 等排化合物涉及用元素硼 (B) 和氮 (N) 选择性取代（掺杂）碳原子。这些前所未有的材料应该模仿并可能超过全碳系统的性能。该项目旨在设计和合成第一个分子BN-等排碳线材料，包括基于金属-碳多重键合的例子。超出其隔离范围的预期结果包括对其与即将出现的技术相关的电学和光学特性的结构功能行为进行高级询问。