Presidential Young Investigator: Growth of II-VI Compound Semiconductors Using Metalakyl Precursors.

总统青年研究员：使用金属烷基前体生长 II-VI 化合物半导体。

• 批准号: 8957056
• 负责人: John Vohs
• 金额: $ 24.95万
• 依托单位: University of Pennsylvania
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1989
• 资助国家: 美国
• 起止时间: 1989-07-01 至 1995-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8957056&HistoricalAwards=false
• 关键词: Presidential; Young; Investigator; Growth; II

Surface chemical processes involved in the growth of II-VI semiconductors from organometallic precursors are studied. Among the issues addressed are mechanisms of surface reactions, structures of reaction intermediates, catalytic properties of the surface, and sources and impact of carbon and other impurities incorporated into the growing films. Techniques employed will include thermal desorption spectroscopy, photoelectron spectroscopy, and high-resolution electron energy-loss spectroscopy. Initial investigation focusses on the growth of zinc oxide, zinc sulfide, and cadmium sulfide on substrates of silicon or gallium arsenide, then progressing to homoepitaxial growth of these materials as well as growth of zinc telluride and cadmium telluride. Metal-organic chemical vapor deposition (MOCVD) and chemical beam epitaxy (CBE) are important processes for the growth of thin films of compound semiconductors. In this study, basic processes relevant to the application of these methods to the production of films of II-VI semiconductors are studied. These particular semiconductor are important because they form the interface that interconverts optical and electronic signals.

研究了从有机金属前驱体生长 II-VI 族半导体所涉及的表面化学过程。 所解决的问题包括表面反应机制、反应中间体的结构、表面的催化性能以及碳和其他杂质掺入生长薄膜的来源和影响。 所采用的技术包括热解吸光谱、光电子光谱和高分辨率电子能量损失光谱。 最初的研究重点是在硅或砷化镓衬底上生长氧化锌、硫化锌和硫化镉，然后进展到这些材料的同质外延生长以及碲化锌和碲化镉的生长。 金属有机化学气相沉积（MOCVD）和化学束外延（CBE）是化合物半导体薄膜生长的重要工艺。 在这项研究中，研究了与这些方法应用于 II-VI 族半导体薄膜生产相关的基本过程。 这些特殊的半导体很重要，因为它们形成了光信号和电子信号相互转换的接口。