Effect of Substrate Surface Microstructure on the Metalorganic Molecular Beam Epitaxy (MOMBE) Growth of Zinc Selenide on the (100) Face of Gallium Arsenide

衬底表面微观结构对砷化镓(100)面金属有机分子束外延(MOMBE)生长硒化锌的影响

• 批准号: 9321341
• 负责人: John Vohs
• 金额: $ 34.2万
• 依托单位: University of Pennsylvania
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-09-01 至 1998-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9321341&HistoricalAwards=false
• 关键词: Effect; Substrate; Surface; Microstructure; Metalorganic

9321341 Vohs The objectives of this project are to provide a comprehensive description of the surface-chemical phenomena involved in the growth of epitaxial layers of zinc selenide (ZnSe) on the (100) surface of gallium arsenide (GaAs) and to develop relationships between surface chemistry, film structure, and interfacial properties. The influence of surface reconstruction of a GaAs(100) substrate on the growth of epitaxial ZnSe films using metalorganic molecular-beam epitaxy (MOMBE) is studied. The adsorption and reaction of dimethylzinc, diethylzinc, and diethylselenium on the arsenic-rich c(4x4) and c(2x8) reconstructions and the nearly stoichiometric (1x6) reconstruction of GaAs(100) are investigated using temperature-programmed desorption and high-resolution electron-energy-loss spectroscopy (HREELS). These results are compared with those from previous studies on the gallium-rich (4x1) reconstruction. The morphology and surface structure of ZnSe films are characterized using atomic force microscopy and scanning tunnelling microscopy as functions of GaAs(100) substrate reconstruction and processing conditions (temperature, pressure, etc.). Structure and electronic properties of ZnSe/GaAs interfaces are probed using HREELS and nonlinear optical spectroscopies. The specific couple studied in this project is used in diodes, LEDs, lasers, and other optoelectronic devices. Improved processing techniques should lead to expanded uses. Additionally, much of this effort may be generalizable to other II-VI / III-V heterojunctions.

9321341 Vohs 该项目的目标是全面描述砷化镓 (GaAs) (100) 表面上硒化锌 (ZnSe) 外延层生长所涉及的表面化学现象，并开发表面之间的关系化学、薄膜结构和界面特性。 研究了 GaAs(100) 衬底表面重构对金属有机分子束外延 (MOMBE) 外延 ZnSe 薄膜生长的影响。 使用程序升温解吸和高分辨率研究了二甲基锌、二乙基锌和二乙基硒在富砷 c(4x4) 和 c(2x8) 重建以及 GaAs(100) 的近化学计量 (1x6) 重建上的吸附和反应电子能量损失光谱（HREELS）。 这些结果与之前富镓 (4x1) 重建研究的结果进行了比较。 使用原子力显微镜和扫描隧道显微镜对 ZnSe 薄膜的形貌和表面结构进行表征，将其作为 GaAs(100) 衬底重建和加工条件（温度、压力等）的函数。 使用 HREELS 和非线性光学光谱来探测 ZnSe/GaAs 界面的结构和电子特性。 本项目研究的特定电偶用于二极管、LED、激光器和其他光电器件。 改进的加工技术应该会导致用途的扩大。 此外，大部分工作可以推广到其他 II-VI / III-V 异质结。