Ultrathin Film Amorphous and Nanocrystalline Semiconductors - Structure, Stability and Electronic Properties

超薄膜非晶和纳米晶半导体 - 结构、稳定性和电子性能

• 批准号: 8714634
• 负责人: Peter Persans
• 金额: $ 11.92万
• 依托单位: Rensselaer Polytechnic Institute
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1988
• 资助国家: 美国
• 起止时间: 1988-08-01 至 1992-01-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=8714634&HistoricalAwards=false
• 关键词: Ultrathin; Film; Amorphous; Nanocrystalline; Semiconductors

They will investigate structure, structural relaxation, atomic interdiffusion and crystallization of ultrathin (1-20nm) amorphous silicon and germanium semiconductor films by applying vibrational and optical spectroscopies to amorphous superlattice structures. They will also investigate size and interface effects in nanocrystalline (20nm crystallites) materials formed by annealing or otherwise treating amorphous superlattice structures. Research efforts will include: 1) Development and application of vibrational Raman scattering as a probe of amorphous network strain (i.e. - bond distortions) and compositional mixing at and near amorphous interfaces. 2) Application and analysis of optical techniques including optical absorption, electromodulation (absorption, reflection, luminescence) and Raman scattering to study the formation and growth of crystallites in ultrathin films. 3) Application of Raman and optical techniques to study atomic diffusion in amorphous and nanocrystalline solids. 4) Development and application of optical and optical modulation techniques to study quantum size effects, interface effects and the breakdown of crystal momentum selection rules in nanocrystals with well defined dimensions from 2nm to 20nm. Nanostructured thin film materials will have a direct impact on the ability to develop amorphous thin films for large area applications such as photo- electronic detectors and arrays, field-effect display drivers and photovoltaic devices. Increased understanding of microscopic relaxation, diffusion and crystallization processes will have implications for the development of low temperature processing technologies for three-dimensional integrated circuits, high temperature semiconductors and non-linear optical components.

他们将通过将振动和光学光谱应用于非晶超晶格结构来研究超薄（1-20nm）非晶硅和锗半导体薄膜的结构、结构弛豫、原子互扩散和结晶。 他们还将研究通过退火或其他处理非晶超晶格结构形成的纳米晶（20nm 微晶）材料的尺寸和界面效应。 研究工作将包括： 1）开发和应用振动拉曼散射作为非晶网络应变（即键畸变）和非晶界面处及其附近的成分混合的探针。 2）应用和分析光学技术，包括光吸收、电调制（吸收、反射、发光）和拉曼散射，以研究超薄膜中微晶的形成和生长。 3) 应用拉曼和光学技术研究非晶和纳米晶固体中的原子扩散。 4) 光学和光学调制技术的开发和应用，以研究量子尺寸效应、界面效应以及2nm至20nm尺寸明确的纳米晶体中晶体动量选择规则的分解。 纳米结构薄膜材料将直接影响开发用于大面积应用的非晶薄膜的能力，例如光电探测器和阵列、场效应显示驱动器和光伏器件。 增加对微观弛豫、扩散和结晶过程的理解将对三维集成电路、高温半导体和非线性光学元件的低温加工技术的发展产生影响。