Amorphous and Nanocrystalline Semiconductors: Growth, Interfaces and Stability

非晶和纳米晶半导体：生长、界面和稳定性

• 批准号: 9104086
• 负责人: Peter Persans
• 金额: $ 15万
• 依托单位: Rensselaer Polytechnic Institute
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1991
• 资助国家: 美国
• 起止时间: 1991-08-15 至 1995-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9104086&HistoricalAwards=false
• 关键词: Amorphous; Nanocrystalline; Semiconductors; Growth; Interfaces

This project is concerned with the use of artificial nanostructures as a tool to study the growth, interface structure and stability of amorphous and crystalline semiconductors. The research will address structure, structural relaxation, atomic diffusion and crystallization of tetrahedrally-based amorphous semiconductor materials (amorphous silicon and related materials). In addition the growth and properties of amorphous silicon and related thin films with particular emphasis on the relationship between structure and electronic properties. The techniques to be utilized include: 1) Raman scattering (useful for the study of local bonding and order); 2) x-ray reflectivity (useful for the study of density, interface roughness and interdiffusion); 3) optical absorption and photoconductivity (sensitive to the electronic charge in the layers and interfaces). The analysis of the data from these different techniques requires different sets of assumptions about materials and their structure. Nanostructured semiconductor-based materials are important technologically for photoelectronic detectors and arrays, field effect display drivers, photovoltaic devices, optical modulation and non-linear optical devices as well as catalysts and catalyst supports for commercial reactions.

该项目涉及使用人造纳米结构作为研究非晶和晶体半导体的生长、界面结构和稳定性的工具。 该研究将解决基于四面体的非晶半导体材料（非晶硅及相关材料）的结构、结构弛豫、原子扩散和结晶。 此外，非晶硅及相关薄膜的生长和性能特别强调结构与电子性能之间的关系。 使用的技术包括： 1) 拉曼散射（对于研究局部键合和有序很有用）； 2）X射线反射率（可用于研究密度、界面粗糙度和相互扩散）； 3）光吸收和光电导（对层和界面中的电子电荷敏感）。 对这些不同技术的数据进行分析需要对材料及其结构进行不同的假设。 纳米结构半导体材料对于光电探测器和阵列、场效应显示驱动器、光伏器件、光调制和非线性光学器件以及商业反应的催化剂和催化剂载体具有重要的技术意义。