发射极注入增强型IGBT快速关断机理与新结构

This application aims at the core problem in the development of IGBTs and researches on the new physical mechanism and novel device structure of IGBT devices to reduce the power loss. The main innovations of this application are: (1) Study the extraction and recombination process of excess carriers during the turnoff process and clarify the relationship between excess carrier concentration distribution and extension of depletion layer width. Setup the Emitter-injection Accelerated Turn-off (EAT) current model and theoretically obtain the way to achieve the optimized excess carrier distribution in terms of the tradeoff relationship between on-state power loss and switching power loss. (2) Based on the proposed EAT model, invent a new IGBT structure featuring a 30% lower forward voltage drop as well as a 50% lower turnoff power loss. (3) Setup an analytical model of power loss and optimization criterions, expand this model to different carrier injection conditions and make it as a unified analytical model of IGBT power loss. . This application is a fundamental research of device physics and experiment, which is of significant importance for ultra-low loss IGBTs.

本申请针对IGBT器件发展中所面临的核心问题，以降低器件功耗为目标，开展IGBT器件新机理与新结构研究，主要创新研究为：1）深究IGBT关断过程中非平衡载流子的抽取和复合过程，揭示非平衡载流子浓度分布和耗尽层扩展的物理本质与规律，建立发射极注入快速关断（EAT）电流模型，获得最优化非平衡载流子浓度分布的实现途径；2）在EAT模型指导下，提出发射极注入增强型IGBT新结构，获得一种导通压降降低30%，关断功耗降低50%以上的IGBT新结构；3）创建发射极注入增强型IGBT器件功耗解析模型和优化判据，并将该模型拓宽至不同条件下的IGBT器件，使之成为IGBT器件功耗优化的统一解析模型，为低功耗IGBT器件设计与实现研究提供理论基础。. 本申请是一项器件理论与实验相结合的应用基础研究，其成果具有重要科学意义和应用前景，对实现我国IGBT自主创新和跨越式发展具有重要意义。