Modeling and simulations of SiGe interdiffusion and ion implantation in CSUPREM

CSUPREM 中 SiGe 相互扩散和离子注入的建模和仿真

• 批准号: 451484-2013
• 负责人: Xia, Guangrui
• 金额: $ 1.56万
• 依托单位: University of British Columbia
• 依托单位国家: 加拿大
• 项目类别: Collaborative Research and Development Grants
• 财政年份: 2014
• 资助国家: 加拿大
• 起止时间: 2014-01-01 至 2015-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=554726
• 关键词: Modeling; simulations; SiGe; interdiffusion; ion

For decades, semiconductor industry has been crucial to drawing the broad outlines of the modern history of economics and technology. It is a high-tech industry with high cost in product R&D. Therefore, computer modeling and simulations for semiconductor materials, devices, circuits and manufacturing processes are widely used in product R&D for cost reduction. It is estimated that it can reduce the R&D cost by as much as 35%, and time of development by 26% [ITRS 2007].

几十年来，半导体行业对于绘制现代经济学和技术历史的广泛概述至关重要。这是一个高科技行业，产品研发成本高。因此，对于半导体材料，设备，电路和制造过程的计算机建模和模拟，用于降低成本。据估计，它可以将研发成本降低35％，开发时间增加了26％[ITRS 2007]。