SiGe and stress technology for next generations of high performance electronic and photonic devices

用于下一代高性能电子和光子器件的 SiGe 和应力技术

• 批准号: 372060-2009
• 负责人: Xia, Guangrui
• 金额: $ 1.46万
• 依托单位: University of British Columbia
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2012
• 资助国家: 加拿大
• 起止时间: 2012-01-01 至 2013-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=505516
• 关键词: SiGe; stress; technology; next; generations

For decades, the silicon (Si) based semiconductor industry has been crucial to drawing the broad outlines of the modern history of economics and technology. In the past decade, however, the ever increasing demands on performance enhancement have pushed Si to its physical limits. The introduction of silicon germanium (SiGe) and stress to previously unstrained Si devices is promising to solve this dilemma, which boost device performance significantly while taking advantage of the existing large scale Si manufacture infrastructure. Moreover, Si and Ge based photonic devices hold the potential to improve the speed of on-chip data transmission and long distance communications by orders of magnitudes. Despite its rapid development in the last decade, the application of SiGe and stress technology brings integration challenges such as SiGe interdiffusion, dopant diffusion and activation, stress distribution and relaxation. These issues degrade device performance and make the product development process complicated, time-consuming and costly. The proposed research is to address these challenges.

几十年来，硅 (Si) 半导体行业对于描绘现代经济和技术史的总体轮廓至关重要。然而，在过去的十年中，对性能增强的不断增长的需求已经将硅推向了其物理极限。硅锗 (SiGe) 的引入以及对先前未受应变的硅器件施加应力有望解决这一困境，从而在利用现有大规模硅制造基础设施的同时显着提高器件性能。此外，基于硅和锗的光子器件有可能将片上数据传输和长距离通信的速度提高几个数量级。尽管近十年来发展迅速，SiGe和应力技术的应用带来了集成挑战，例如SiGe相互扩散、掺杂剂扩散和激活、应力分布和弛豫。这些问题会降低设备性能，并使产品开发过程变得复杂、耗时且成本高昂。拟议的研究旨在应对这些挑战。