NANOSECOND RADIOFREQUENCY SWITCH DRIVER DESIGN UPGRADE & HYBRIDIZATION

纳秒射频开关驱动器设计升级

• 批准号: 8363941
• 负责人: CURT R DUNNAM
• 金额: $ 0.05万
• 依托单位: CORNELL UNIVERSITY
• 依托单位国家: 美国
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-09-01 至 2012-08-31
• 项目状态: 已结题
• 来源: https://reporter.nih.gov/project-details/8363941
• 关键词: Ceramics; Characteristics; Charge; Development; Devices; Electromagnetics; Electronics; Funding; Grant; Hybrids; Legal patent; Modeling; National Center for Research Resources; Performance; Physiologic pulse; Principal Investigator; Research; Research Infrastructure; Resources; Semiconductors; Silicon; Software Tools; Source; Specific qualifier value; Speed; Technology; Time; Translating; United States National Institutes of Health; Variant; cost; design; gallium arsenide; improved; microwave electromagnetic radiation; nanosecond; next generation; novel; radiofrequency; simulation; transmission process

This subproject is one of many research subprojects utilizing the resources provided by a Center grant funded by NIH/NCRR. Primary support for the subproject and the subproject's principal investigator may have been provided by other sources, including other NIH sources. The Total Cost listed for the subproject likely represents the estimated amount of Center infrastructure utilized by the subproject, not direct funding provided by the NCRR grant to the subproject or subproject staff. Improved fast switching of radiofrequency (r.f.) energy via PIN-diode switches is essential for receiver protection and deadtime reduction in the design of ACERT next-generation pulsed-ESR spectrometers. Fabrication of a novel, specialized electronic driver for PIN switches has previously been accomplished within the Freed Research Group (U.S. patent #5,214,315). A unique feature of this invention is that it optimizes transition speed under reactive loading conditions typical of Si and GaAs PIN-diode arrays. We are currently upgrading the driver by modeling and specifying higher-performance power MOSFET semiconductors and reformatting the switch driver as a high-performance hybrid circuit. Integration of the discrete components comprising the switch driver onto a compact ceramic substrate will significantly improve switching speed by minimizing parasitic inductance associated with the circuit interconnects. We are employing advanced commercial software tools in order to accurately model the higher-order interconnect parasitics and semiconductor characteristics; this capability allows efficient simulation and selection of newer semiconductors best-suited to this application. It also permits accurately predicting the magnitude and effect of minute parasitic reactances, greatly reducing the time required for convergence of layout variations. Simulation studies indicate that the most recent hybrid driver design should perform at the 6 - 8 ns level for charge transfers of 15-20 nC. This figure translates to probable r.f. switching speeds in the 10 - 14 ns range for high-power silicon PIN diode arrays, or 4 - 6 ns for h.v. GaAs PIN arrays. The driver hybrid assembly is physically small and can therefore be situated in close proximity to its associated PIN arrays, minimizing detrimental transmission-line effects and electromagnetic interference. We are evaluating further candidate PIN devices and plan to requisiton the hybrid drivers once the PIN diodes have been characterized in the context of our ongoing microwave spectrometer development.

该子项目是利用资源的众多研究子项目之一 由 NIH/NCRR 资助的中心拨款提供。子项目的主要支持 并且子项目的主要研究者可能是由其他来源提供的， 包括其他 NIH 来源。 子项目可能列出的总成本 代表子项目使用的中心基础设施的估计数量， NCRR 赠款不直接向子项目或子项目工作人员提供资金。 通过 PIN 二极管开关改进射频 (r.f.) 能量的快速切换对于 ACERT 下一代脉冲 ESR 光谱仪设计中的接收器保护和死区时间缩短至关重要。 Freed 研究小组此前已经完成了用于 PIN 开关的新型专用电子驱动器的制造（美国专利号 5,214,315）。本发明的独特特征是它优化了Si和GaAs PIN二极管阵列典型的电抗负载条件下的转变速度。我们目前正在通过建模和指定更高性能的功率 MOSFET 半导体来升级驱动器，并将开关驱动器重新格式化为高性能混合电路。将包括开关驱动器的分立元件集成到紧凑的陶瓷基板上将通过最小化与电路互连相关的寄生电感来显着提高开关速度。我们采用先进的商业软件工具来准确建模高阶互连寄生效应和半导体特性；此功能允许高效模拟和选择最适合该应用的新型半导体。它还可以准确预测微小寄生电抗的大小和影响，从而大大减少布局变化收敛所需的时间。 仿真研究表明，最新的混合驱动器设计应在 6 - 8 ns 水平上执行 15-20 nC 的电荷传输。该数字转换为可能的射频。高功率硅 PIN 二极管阵列的开关速度在 10 - 14 ns 范围内，高压硅二极管阵列的开关速度在 4 - 6 ns 范围内。 GaAs PIN 阵列。驱动器混合组件的物理尺寸很小，因此可以靠近其相关的 PIN 阵列放置，从而最大限度地减少有害的传输线效应和电磁干扰。我们正在评估更多候选 PIN 器件，并计划在我们正在进行的微波光谱仪开发中对 PIN 二极管进行表征后，再征用混合驱动器。