NANOSECOND RADIOFREQUENCY SWITCH DRIVER DESIGN UPGRADE & HYBRIDIZATION

纳秒射频开关驱动器设计升级

• 批准号: 8172070
• 负责人: CURT R DUNNAM
• 金额: $ 0.03万
• 依托单位: CORNELL UNIVERSITY
• 依托单位国家: 美国
• 财政年份: 2010
• 资助国家: 美国
• 起止时间: 2010-09-01 至 2011-08-31
• 项目状态: 已结题
• 来源: https://reporter.nih.gov/project-details/8172070
• 关键词: Ceramics; Characteristics; Charge; Computer Retrieval of Information on Scientific Projects Database; Development; Devices; Electromagnetics; Electronics; Funding; Grant; Hybrids; Institution; Legal patent; Modeling; Performance; Physiologic pulse; Research; Research Personnel; Resources; Semiconductors; Silicon; Software Tools; Source; Specific qualifier value; Speed; Time; Translating; United States National Institutes of Health; Variant; design; gallium arsenide; improved; microwave electromagnetic radiation; nanosecond; next generation; novel; radiofrequency; simulation; transmission process

This subproject is one of many research subprojects utilizing the resources provided by a Center grant funded by NIH/NCRR. The subproject and investigator (PI) may have received primary funding from another NIH source, and thus could be represented in other CRISP entries. The institution listed is for the Center, which is not necessarily the institution for the investigator. Improved fast switching of radiofrequency (r.f.) energy via PIN-diode switches is essential for receiver protection and deadtime reduction in the design of ACERT next-generation pulsed-ESR spectrometers. Fabrication of a novel, specialized electronic driver for PIN switches has previously been accomplished within the Freed Research Group (U.S. patent #5,214,315). A unique feature of this invention is that it optimizes transition speed under reactive loading conditions typical of Si and GaAs PIN-diode arrays. We are currently upgrading the driver by modeling and specifying higher-performance power MOSFET semiconductors and reformatting the switch driver as a high-performance hybrid circuit. Integration of the discrete components comprising the switch driver onto a compact ceramic substrate will significantly improve switching speed by minimizing parasitic inductance associated with the circuit interconnects. We are employing advanced commercial software tools in order to accurately model the higher-order interconnect parasitics and semiconductor characteristics; this capability allows efficient simulation and selection of newer semiconductors best-suited to this application. It also permits accurately predicting the magnitude and effect of minute parasitic reactances, greatly reducing the time required for convergence of layout variations. Simulation studies indicate that the most recent hybrid driver design should perform at the 6 - 8 ns level for charge transfers of 15-20 nC. This figure translates to probable r.f. switching speeds in the 10 - 14 ns range for high-power silicon PIN diode arrays, or 4 - 6 ns for h.v. GaAs PIN arrays. The driver hybrid assembly is physically small and can therefore be situated in close proximity to its associated PIN arrays, minimizing detrimental transmission-line effects and electromagnetic interference. We are evaluating further candidate PIN devices and plan to requisiton the hybrid drivers once the PIN diodes have been characterized in the context of our ongoing microwave spectrometer development.

该副本是利用众多研究子项目之一 由NIH/NCRR资助的中心赠款提供的资源。子弹和 调查员（PI）可能已经从其他NIH来源获得了主要资金， 因此可以在其他清晰的条目中代表。列出的机构是 对于中心，这不一定是调查员的机构。 通过销二极管开关改善了射频（R.F.）能量的快速切换对于接收器保护和降低ACERT下一代脉冲-ESR光谱仪的消亡时间至关重要。以前在Freed Research Group（美国专利5,214,315）中完成了新型专门的电子驱动器的专业电子驱动器的制造。本发明的一个独特功能是，它在反应性加载条件下优化了SI和GAAS PIN-DIODE阵列的过渡速度。我们目前正在通过对驾驶员进行建模和指定高性能MOSFET半导体并将开关驱动器作为高性能混合动力电路进行重新格式化。将开关驱动器包含在紧凑的陶瓷基材上的离散组件的集成将通过最大程度地减少与电路互连相关的寄生电感来显着提高开关速度。我们正在使用先进的商业软件工具来准确地对高阶互连寄生虫和半导体特征进行建模；该功能允许有效地模拟和选择最适合此应用程序的较新的半导体。它还允许准确预测微小寄生反应的大小和效果，从而大大减少了布局变化收敛所需的时间。 模拟研究表明，最新的混合动力驱动器设计应在15-20 NC的电荷传输中以6-8 ns的水平执行。该图转化为可能的R.F.高功率硅销二极管阵列的10-14 ns范围内的开关速度，H.V. 4-6 ns。 GAAS引脚阵列。驱动器混合组件物理上很小，因此可以靠近其相关的销阵列，从而最大程度地减少了有害的传输线效应和电磁干扰。我们正在评估进一步的候选销钉设备，并计划在我们正在进行的微波炉开发的背景下对销钉二极管进行表征，以要求混合动力驱动器。