Fabrication of first 337 nm laser diodes for biological applications

制造首款用于生物应用的 337 nm 激光二极管

• 批准号: EP/F03363X/1
• 负责人: Tao Wang
• 金额: $ 6.26万
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2008
• 资助国家: 英国
• 起止时间: 2008 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FF03363X%2F1
• 关键词: Fabrication; first; 337; nm; laser

Recently, with the unfortunate emergence of bio-terrorism and its threat to both military targets and civilian populations, it is necessary to develop a portable and cheap system to continuously monitor for any potential aerosolized agents (biological particles) released from deadly biological weapons in any open area, even in harsh environments. As most bio-molecules show strong absorption in the ultra-violet (UV) spectral region ranging from 280 to 340 nm, an efficient UV lighting source is expected to be a crucial component for next-generation biological detection, biological imaging and disease analysis applications. In particular use of UV laser diodes would enable high sensitivity detection systems. III-nitride semiconductors are the best materials to make such laser diodes. In last decade, there have been major achievements in this area. However, the achievements are limited to the violet/blue spectral region, with those devices mainly based on the InGaN alloy. Due to a number of challenges in material growth, a 343 nm laser diode is the shortest one so far reported. Obviously, such a laser diode is not short enough to be employable for above applications.Target of this exploratory project is the development of the first 337 nm UV laser diode based on the GaN/AlGaN material system to replace currently used N2 gas-based lasers. This work is based on recent major advances of the here involved UK teams in the field of III-nitride semiconductors. Further applications of the technology involve biological imaging as an efficient method to detect diseases in a human body, for example, cancerous tissues.

最近，随着生物恐怖主义的不幸出现及其对军事目标和平民人口的威胁，有必要开发一种便携式廉价的系统，以连续监控任何潜在的雾化药物（生物颗粒）（即使在任何开放区域），即使在恶劣的环境中，任何潜在的雾化药物（生物颗粒）也有必要。由于大多数生物分子在280至340 nm之间显示出强大的紫外（UV）光谱区域的吸收强大，因此有效的紫外线照明来源预计将是下一代生物检测，生物成像和疾病分析应用的关键成分。特别是使用紫外线激光二极管将实现高灵敏度检测系统。 III氮化物半导体是制造这种激光二极管的最佳材料。在过去的十年中，该领域取得了重大成就。但是，成就仅限于紫罗兰色/蓝色光谱区域，这些设备主要基于Ingan合金。由于材料增长的许多挑战，迄今为止最短的是343 nm激光二极管。显然，这种激光二极管的短短不足以用于上述应用。该探索性项目的目标是基于GAN/Algan材料系统的第一个337 NM UV激光二极管的开发，以替换当前使用的N2气体基于N2的基于N2的激光器。这项工作是基于此处的最新进步，涉及英国III氮化物半导体领域的英国团队。该技术的进一步应用涉及生物成像作为检测人体疾病的有效方法，例如癌组织。

项目成果

Optical gain in AlGaN/AlGaN multiple quantum wells grown on high temperature AlN multiple buffers

在高温 AlN 多重缓冲器上生长的 AlGaN/AlGaN 多量子阱的光学增益

• DOI: 10.1002/pssc.201001060
• 发表时间: 2011
• 期刊: physica status solidi c
• 作者: Gong Y

Stimulated emission at 340 nm from AlGaN multiple quantum well grown using high temperature AlN buffer technologies on sapphire

使用高温 AlN 缓冲技术在蓝宝石上生长的 AlGaN 多量子阱的 340 nm 受激发射

• DOI: 10.1063/1.3253416
• 发表时间: 2009
• 期刊: Applied Physics Letters
• 影响因子: 4
• 作者: Wang Q

Electron microscopy of AlGaN-based multilayers for UV laser devices

用于紫外激光器件的 AlGaN 多层膜的电子显微镜

• DOI: 10.1088/1742-6596/241/1/012048
• 发表时间: 2010
• 期刊: Conference Series
• 作者: Lari L

Temperature dependent behaviour of 340 nm light emitting diodes incorporating a gallium nitride interlayer

包含氮化镓中间层的 340 nm 发光二极管的温度依赖性行为

• DOI: 10.1088/0022-3727/41/9/094004
• 发表时间: 2008
• 期刊: Applied Physics
• 作者: Airey R

Light Emitting and Laser Diodes in the Ultraviolet

• DOI: 10.1109/jstqe.2011.2126563
• 发表时间: 2011-09-01
• 期刊: IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
• 影响因子: 4.9
• 作者: Parbrook, Peter James;Wang, Tao
• 通讯作者: Wang, Tao