Monolithic On-chip Integration of Electronics & Photonics Using III-nitrides for Telecoms

单片片上电子集成

• 批准号: EP/T013001/1
• 负责人: Tao Wang
• 金额: $ 77.45万
• 依托单位: University of Sheffield
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2020
• 资助国家: 英国
• 起止时间: 2020 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FT013001%2F1
• 关键词: Monolithic; chip; Integration; Electronics; Photonics

Internet and telecoms are facing an explosive growth in data traffic, increasing at 50% per year. This requires the development of monolithic on-chip integration of electronics and photonics, which offers a massive reduction in both footprint and processing costs. Such a compact system will require a high power density and excellent high temperature tolerance. Monolithically integrating III-nitride based electronics and photonics on silicon on a single chip will represent the most promising approach to meeting the requirements in the telecoms regime. The photonic parts include active (laser diodes) and passive (photodetectors) components linked by waveguides, where the laser diodes are controlled by high electron mobility transistors. The electronic and photonic parts both need to meet the requirements for high power, high frequency and high temperature operation, as well as excellent temperature stability and robust mechanical properties. Conventional III-V semiconductors (GaAs or InP) suffer a number of fundamental limitations such as intolerance to high-temperatures, temperature sensitivity, limited power density capacity and fragility. They also exhibit high losses due to scattering (high refractive index) and multiphoton absorption. III-nitride semiconductors all have direct bandgaps and cover a vast spectral region from deep ultraviolet to infrared. Compared with conventional III-V materials, the III-nitrides exhibit major advantages in the fabrication of high power, high frequency and high temperature devices due to their intrinsically high breakdown voltage, high saturation electron velocity and excellent mechanical hardness. III-nitrides exhibit low free carrier absorption, negligible multiphoton absorption, low refractive index (2.3 for GaN compared with 3.5 for GaAs) and superior temperature stability of the refractive index (one order of magnitude higher than that of InP). Therefore, III-nitrides offer great potential to revolutionise current internet and telecoms and enable ultra-fast speed and ultra-broad bandwidths, going far beyond that so-far achieved in the telecoms regime (1.3-1.55 um). Up to now research on III-nitrides has mainly been confined to the visible spectral range but this is not a limit. III-nitrides based devices exhibit superior properties in terms of delivering the power/efficiency required for next-generation telecoms. This is important to the communications industry, which is expected to use 20% of the global electricity by 2025, where a large proportion (>30%) is consumed by the data centre cooling systems. Monolithically integrating III-nitride electronics and photonics on silicon on a single chip by direct epitaxy in the telecoms regime would therefore offer transformative performance.Our ambitious vision is to employ the two major leading epitaxial growth techniques (MOVPE and MBE) for III-nitrides, combining the leading-expertise established at Sheffield, Cardiff and Strathclyde along with a world-leading research team at Michigan in USA in order to demonstrate the first monolithic on-chip integration of III-nitride based electronics and photonics on silicon with operation in the telecoms regime. This is expected to revolutionise current internet and telecoms.

互联网和电信正面临数据流量的爆炸性增长，每年以50％的速度增加。这需要发展电子和光子学的整体片整合，这可以大大降低足迹和加工成本。这种紧凑的系统将需要高功率密度和出色的高温公差。单层整合基于III二硝酸盐的电子产品和单芯片上的光子学将代表满足电信制度需求的最有希望的方法。光子零件包括活性（激光二极管）和由波导连接的被动（光电探测器）组件，其中激光二极管由高电子迁移率晶体管控制。电子和光子零件都需要满足高功率，高频和高温运行的要求，以及出色的温度稳定性和鲁棒的机械性能。常规的III-V半导体（GAAS或INP）遭受了许多基本局限性，例如对高温的不耐受，温度灵敏度，有限的功率密度和脆弱性。它们还由于散射（高折射率）和多光子吸收而表现出很高的损失。 III氮化物半导体都具有直接的带镜，覆盖了从深紫外线到红外线的广阔光谱区域。与常规的III-V材料相比，III-硝酸盐在制造高功率，高频和高温设备方面具有主要优势，这是由于其本质上的高击球电压，高饱和电子速度和出色的机械硬度。 III-硝酸盐表现出低的自由载体吸收，可忽略不计的多光子吸收，低折射率（GAN为2.3，而GAAs为3.5）和折射率的较高温度稳定性（比INP的一个数量级高）。因此，III-硝酸盐为革新当前的互联网和电信提供了巨大的潜力，并实现了超快速的速度和超大的带宽，远远超出了在电信政权（1.3-1.55 um）中所取得的这一领域。到目前为止，对III-硝酸盐的研究主要局限于可见的光谱范围，但这不是限制。基于III-硝酸盐的设备在传递下一代电信所需的功率/效率方面具有较高的特性。这对通信行业很重要，通信行业预计到2025年将使用20％的全球电力，在数据中心冷却系统消耗了很大比例（> 30％）。因此，通过电信制度中直接同育在单个芯片上单一整合了硅上的III二氮化物电子和光子学，将提供变革性的性能。我们的雄心勃勃的视觉是利用两种主要的领先的外在增长技术（MOVPE和MBE），用于III-NTRIDES，III-NTRIDES，，III-NTRIDES，，，III-NTRIDES，，，，，III-NTRIDES，，，，III-NTRIDES，，，，，，，，，，III-硝酸盐，，，，，，，，则使用将在谢菲尔德，加的夫和Strathclyde建立的领先专家与美国密歇根州密歇根州的世界领先的研究团队一起建立的领先，以证明基于III二硝酸盐的电子和光子学在电信中运行的第一个单片基于III二硝酸盐的芯片整合政权。预计这将彻底改变当前的互联网和电信。

项目成果

Direct Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT and a Single Micro-LED with a High-Modulation Bandwidth.

• DOI: 10.1021/acsaelm.0c00985
• 发表时间: 2021-01-26
• 期刊: ACS applied electronic materials
• 影响因子: 4.7
• 作者: Cai Y;Haggar JIH;Zhu C;Feng P;Bai J;Wang T
• 通讯作者: Wang T

A Tamm plasmon-porous GaN distributed Bragg reflector cavity

• DOI: 10.1088/2040-8986/abdccb
• 发表时间: 2021-03-01
• 期刊: JOURNAL OF OPTICS
• 影响因子: 2.1
• 作者: Pugh, J. R.;Harbord, E. G. H.;Cryan, M. J.
• 通讯作者: Cryan, M. J.

Two-Inch Wafer-Scale Exfoliation of Hexagonal Boron Nitride Films Fabricated by RF-Sputtering

• DOI: 10.1002/adfm.202206094
• 发表时间: 2022-07-10
• 期刊: ADVANCED FUNCTIONAL MATERIALS
• 影响因子: 19
• 作者: Li, Qiang;Wang, Mingdi;Hao, Yue
• 通讯作者: Hao, Yue

Investigation of Electrical Properties of InGaN-Based Micro-Light-Emitting Diode Arrays Achieved by Direct Epitaxy

直接外延实现的InGaN基微型发光二极管阵列的电学性能研究

• DOI: 10.1002/pssa.202100474
• 发表时间: 2021
• 期刊: physica status solidi (a)
• 作者: Esendag V

Study of the Luminescence Decay of a Semipolar Green Light-Emitting Diode for Visible Light Communications by Time-Resolved Electroluminescence.

• DOI: 10.1021/acsphotonics.2c00414
• 发表时间: 2022-07-20
• 期刊: ACS PHOTONICS
• 影响因子: 7
• 作者: Haggar, Jack Ivan Holly;Ghataora, Suneal S.;Trinito, Valerio;Bai, Jie;Wang, Tao
• 通讯作者: Wang, Tao